圖片僅供參考
IPP320N20N3G
- 製造商
- 製造商。 部分 #IPP320N20N3G
- 包
- 資料表
- 有現貨的6261
100%原創； 新
24小時準備發貨
365天保修
RFQ&； 獲得更多折扣
規格
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Process Technology | OptiMOS |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 34 |
| Maximum Drain Source Resistance (MOhm) | 32@10V |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Input Capacitance @ Vds (pF) | 1770@100V |
| Maximum Power Dissipation (mW) | 136000 |
| Typical Fall Time (ns) | 4 |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Mounting | Through Hole |
| Package Height | 9.25 |
| Package Width | 4.4 |
| Package Length | 10 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Tab | Tab |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Gate to Drain Charge (nC) | 3 |
| Typical Gate to Source Charge (nC) | 8 |
| Typical Reverse Recovery Charge (nC) | 500 |
| Typical Switch Charge (nC) | 5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4@100V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 135 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 136 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Typical Diode Forward Voltage (V) | 0.9 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Reverse Recovery Time (ns) | 110 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 3 |
| Maximum Positive Gate Source Voltage (V) | 20 |
概述
Description
The IPP320N20N3G is a high-performance N-channel power MOSFET designed for use in various applications, including industrial and automotive sectors. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 320A, making it suitable for high-voltage and high-current applications.
This MOSFET is built using advanced Trench technology, which enhances its efficiency and reduces conduction losses. It also has a low gate threshold voltage, allowing for easy interfacing with logic-level control signals. The IPP320N20N3G offers low on-resistance (RDS(on)), which contributes to improved thermal performance and energy efficiency in power conversion systems.
Key specifications include fast switching capabilities, robust thermal stability, and high reliability, making it ideal for use in power supplies, motor drives, and inverters. Overall, the IPP320N20N3G is a versatile component that helps optimize the performance of power electronic systems.
This MOSFET is built using advanced Trench technology, which enhances its efficiency and reduces conduction losses. It also has a low gate threshold voltage, allowing for easy interfacing with logic-level control signals. The IPP320N20N3G offers low on-resistance (RDS(on)), which contributes to improved thermal performance and energy efficiency in power conversion systems.
Key specifications include fast switching capabilities, robust thermal stability, and high reliability, making it ideal for use in power supplies, motor drives, and inverters. Overall, the IPP320N20N3G is a versatile component that helps optimize the performance of power electronic systems.
Features
The IPP320N20N3G is an N-channel power MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is up to 320A, allowing it to handle significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 0.025 ohms, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive characteristics.
5. Thermal Performance: With a high maximum junction temperature (TJ), it can operate in demanding conditions.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation.
These features make the IPP320N20N3G ideal for applications such as power supplies, motor drives, and other high-frequency switching applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (ID) is up to 320A, allowing it to handle significant power loads.
3. RDS(on): It features a low on-resistance (RDS(on)) of around 0.025 ohms, minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) ranges from 2V to 4V, enabling efficient drive characteristics.
5. Thermal Performance: With a high maximum junction temperature (TJ), it can operate in demanding conditions.
6. Package Type: It is available in a TO-220 package, providing good thermal dissipation.
These features make the IPP320N20N3G ideal for applications such as power supplies, motor drives, and other high-frequency switching applications.
Package
The IPP320N20N3G is typically available in a TO-220 package type. This package is designed for efficient heat dissipation and easy mounting, making it suitable for power applications.
Pinout
The IPP320N20N3G is a N-channel MOSFET from Infineon Technologies, typically housed in a TO-220 package. It features a total of three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. The drain is connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage point in the circuit.
This device is suitable for various applications, including power management and switching due to its low on-resistance and high current handling capability.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. The drain is connected to the load.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or a lower voltage point in the circuit.
This device is suitable for various applications, including power management and switching due to its low on-resistance and high current handling capability.
Manufacturer
The IPP320N20N3G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company is known for its innovative products that cater to various industries such as automotive, industrial, communication, and consumer electronics. Infineon focuses on enhancing energy efficiency and sustainability through its advanced semiconductor technologies.
Application
The IPP320N20N3G is an N-channel MOSFET primarily used in power management applications. Its application areas include industrial motor drives, power supplies, automotive electronics, and renewable energy systems. It is suitable for high-efficiency switching, DC-DC converters, and inverters, effectively handling high voltages and currents for improved performance in various electronic devices.
Equivalent
The IPP320N20N3G is an N-channel MOSFET from Infineon. Equivalent products include the STP320N20, FQP30N20, and IRF320. For precise application requirements, always check specifications like Vds, Rds(on), and current ratings to ensure compatibility.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷（DHL/FedEx）:
動態主要裝載: 運費從25美元到45美元（0.5公斤）不等，預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元（0.5公斤）不等，預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元（0.5公斤）不等，預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元（0.5公斤）不等，預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元（0.5公斤）不等，預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元（0.1公斤），預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時，我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
![MX25V5126FM1I]()
MX25V5126FM1I
Macronix
-
![MX25V4035FZUI]()
MX25V4035FZUI
Macronix
-
![MX25V16066M1I02]()
MX25V16066M1I02
Macronix
-
![MX25V16066M2I02]()
MX25V16066M2I02
Macronix
-
![MX30LF2G28AD-TI]()
MX30LF2G28AD-TI
Macronix
-
![MX25L8035EM2I-10G]()
MX25L8035EM2I-10G
Macronix
-
![MX25R6435FBDIL0]()
MX25R6435FBDIL0
Macronix
-
![MX25L25673GMI-10G]()
MX25L25673GMI-10G
Macronix
-
![MX25U51279GXDR00]()
MX25U51279GXDR00
Macronix
-
![MX25L2006EM1I-12G]()
MX25L2006EM1I-12G
Macronix
-
![MX25V1635FM2I]()
MX25V1635FM2I
Macronix
-
![MX25U3232FZBI02]()
MX25U3232FZBI02
Macronix
