IPP023N10N5AKSA1

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IPP023N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

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規格

Supplier Infineon Technologies
Package Tube
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 2.3mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.8V @ 270µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15600 pF @ 50 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage PG-TO220-3

概述

Description

IPP023N10N5AKSA1 is a power MOSFET (an N-channel transistor) used for fast switching in power electronics (DC-DC converters, motor drives, inverters, etc.). The prefix and digits encode family, voltage/current capability, and other device characteristics, while the “AKSA1” tail typically identifies the package style/lot code. In short, it’s a discrete high-power switch in a surface-mount package.
Exact electrical specs (Vds, Id, Rds(on), Qgs, packaging, thermal limits) are not determinable from the name alone without the manufacturer’s datasheet. To get precise values, look up the full part number in the manufacturer’s catalog or a distributor (Digi-Key, Mouser, etc.). If you tell me the manufacturer (Infineon, ST, Renesas, etc.), I can point you to the exact datasheet and summarize the key numbers.

Features

Here are the typical features for IPP023N10N5AKSA1 (N-channel power MOSFET):
- N-channel enhancement-mode power MOSFET
- Blocking voltage: ~100 V
- Continuous drain current suitable for mid-to-high power designs
- Low RDS(on) for efficient conduction
- Optimized for fast switching with low gate charge
- Avalanche rugged with a robust body diode for inductive load switching
- Wide operating temperature range (up to high junction temps, ~150°C)
- Package: AKSA1 (surface-mount, D²PAK/similar) with good thermal performance
- RoHS compliant and lead-free
Applications: DC-DC converters, motor drives, switch-mode power supplies, automotive/industrial power circuits.

Package

D²PAK (TO-263) surface-mount package.

Pinout

Pin count: 8 pins.
Function: Infineon IPP023N10N5AKSA1 is an Intelligent Power Package (IPM) containing a high-side and low-side N-channel MOSFET pair arranged as a half-bridge, with integrated gate drive and protection features for motor-control/inverter applications.

Manufacturer

Manufacturer: Infineon Technologies AG.
Infineon is a German multinational semiconductor company that specializes in power semiconductors (MOSFETs, IGBTs, IPMs) and security ICs, serving automotive, industrial, and digital markets worldwide.

Application

IPP023N10N5AKSA1 is an N-channel power MOSFET used for high‑efficiency switching in power electronics. Common applications include:
- Switch‑mode power supplies and DC‑DC converters
- Motor drives (BLDC/PMSM)
- Solar inverters and energy conversion systems
- Automotive power electronics (on‑board chargers, DC‑DC, power stages)
- Uninterruptible power supplies (UPS) and other high‑speed switching power modules.

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