圖片僅供參考
IPL60R185C7
MOSFETs HIGH POWER_NEW
- 製造商
- 製造商。 部分 #IPL60R185C7
- 包
- 資料表 IPL60R185C7 DataSheet
- 有現貨的5575
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Packaging | Reel |
概述
Description
The IPL60R185C7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications. It is part of the Infineon’s CoolSiC™ technology, which provides excellent efficiency and thermal performance. This IGBT is characterized by its low conduction losses and high switching speed, making it suitable for use in inverters, motor drives, and power supplies.
Key specifications include a maximum collector-emitter voltage (Vce) of 1,200 volts and a maximum collector current (Ic) of 60 amps. Its robust design allows for high temperature operation, ensuring reliability in demanding environments. The IPL60R185C7 is particularly noted for its high gain, which helps in reducing the drive current requirements.
Overall, this device is ideal for applications in renewable energy systems, industrial drives, and other power conversion systems needing efficient and reliable switching solutions.
Key specifications include a maximum collector-emitter voltage (Vce) of 1,200 volts and a maximum collector current (Ic) of 60 amps. Its robust design allows for high temperature operation, ensuring reliability in demanding environments. The IPL60R185C7 is particularly noted for its high gain, which helps in reducing the drive current requirements.
Overall, this device is ideal for applications in renewable energy systems, industrial drives, and other power conversion systems needing efficient and reliable switching solutions.
Features
The IPL60R185C7 is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplification. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 185A, enabling it to manage significant power loads.
3. R_DS(on): It exhibits a low on-resistance (R_DS(on)), typically around 7.5 mΩ, which improves efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2V to 4V, ensuring reliable switching under low gate drive voltages.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching Speed: The MOSFET features high-speed switching capabilities, making it ideal for applications requiring rapid operation.
These features make the IPL60R185C7 a versatile choice for modern power electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 185A, enabling it to manage significant power loads.
3. R_DS(on): It exhibits a low on-resistance (R_DS(on)), typically around 7.5 mΩ, which improves efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2V to 4V, ensuring reliable switching under low gate drive voltages.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching Speed: The MOSFET features high-speed switching capabilities, making it ideal for applications requiring rapid operation.
These features make the IPL60R185C7 a versatile choice for modern power electronics applications.
Package
The IPL60R185C7 is typically packaged in a TO-247 format, which is a power transistor package designed for high power applications. It features three terminals and is suitable for various applications requiring efficient thermal management and power handling.
Pinout
The IPL60R185C7 is an insulated gate bipolar transistor (IGBT) designed for high-power applications. It features a standard pin count of 5. The pin configuration typically includes:
1. Gate (G) - Used to control the switching of the IGBT.
2. Collector (C) - The main terminal for carrying the load current.
3. Emitter (E) - Provides a return path for the current, often connected to the ground.
4. Thermal pad (optional) - For heat dissipation, typically connected to the emitter or ground.
The IGBT is known for its high efficiency and fast switching capabilities, making it suitable for applications such as inverters, motor drives, and power converters. Its voltage rating is 1,200V, and it can handle a continuous current of up to 60A.
1. Gate (G) - Used to control the switching of the IGBT.
2. Collector (C) - The main terminal for carrying the load current.
3. Emitter (E) - Provides a return path for the current, often connected to the ground.
4. Thermal pad (optional) - For heat dissipation, typically connected to the emitter or ground.
The IGBT is known for its high efficiency and fast switching capabilities, making it suitable for applications such as inverters, motor drives, and power converters. Its voltage rating is 1,200V, and it can handle a continuous current of up to 60A.
Manufacturer
The IPL60R185C7 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor and system solutions, focusing on automotive, industrial power control, and security technologies. The company is known for its innovations in power management, energy efficiency, and connectivity solutions, catering to various sectors including automotive, industrial automation, and consumer electronics. Infineon aims to improve energy efficiency and sustainability across its product lines.
Application
The IPL60R185C7 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications such as motor drives, power supplies, and renewable energy systems like solar inverters. It is suitable for high-efficiency power conversion due to its low switching losses and high current capacity, making it ideal for applications in electric vehicles, welding equipment, and induction heating.
Equivalent
The IPL60R185C7 is a IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include the STGW30H120, FGA25N120, and MG150Q2YS40. For exact applications, check datasheets for voltage, current ratings, and switching characteristics to ensure compatibility.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX29LV640ETTI-70G
Macronix