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IPD90N06S4-05
MOSFETs N-Ch 60V 90A DPAK-2 OptiMOS-T2
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| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概述
Description
The IPD90N06S4-05 is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)) of 0.006 ohms, which allows for efficient conduction and minimal power loss. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 90A, this MOSFET is ideal for use in power management, switching applications, and motor control.
The device is packaged in a TO-220 format, facilitating effective heat dissipation. Its fast switching capabilities make it suitable for high-frequency applications, while a low gate threshold voltage enhances its versatility in various circuits. The IPD90N06S4-05 is often utilized in automotive, industrial, and consumer electronics, where reliable and efficient power handling is crucial. Overall, it combines robustness with high performance, making it a popular choice among engineers and designers in the field of electronics.
The device is packaged in a TO-220 format, facilitating effective heat dissipation. Its fast switching capabilities make it suitable for high-frequency applications, while a low gate threshold voltage enhances its versatility in various circuits. The IPD90N06S4-05 is often utilized in automotive, industrial, and consumer electronics, where reliable and efficient power handling is crucial. Overall, it combines robustness with high performance, making it a popular choice among engineers and designers in the field of electronics.
Features
The IPD90N06S4-05 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. High Voltage Rating: It can handle up to 60V, making it suitable for various power management tasks.
2. Low R_DS(on): With a drain-source on-resistance typically around 9 mΩ, it ensures minimal conduction losses, enhancing efficiency.
3. High Current Capacity: It supports continuous drain currents up to 90A, allowing it to manage substantial power loads.
4. Fast Switching Speed: Optimized for quick turn-on and turn-off times, it is ideal for applications requiring rapid switching.
5. Thermal Performance: The device has good thermal stability, with a low thermal resistance, ensuring reliable operation under high load conditions.
6. TO-220 Package: Offers robust mechanical support and effective heat dissipation for high-power applications.
These features make the IPD90N06S4-05 suitable for use in power supplies, motor drives, and other high-performance electronic circuits.
1. High Voltage Rating: It can handle up to 60V, making it suitable for various power management tasks.
2. Low R_DS(on): With a drain-source on-resistance typically around 9 mΩ, it ensures minimal conduction losses, enhancing efficiency.
3. High Current Capacity: It supports continuous drain currents up to 90A, allowing it to manage substantial power loads.
4. Fast Switching Speed: Optimized for quick turn-on and turn-off times, it is ideal for applications requiring rapid switching.
5. Thermal Performance: The device has good thermal stability, with a low thermal resistance, ensuring reliable operation under high load conditions.
6. TO-220 Package: Offers robust mechanical support and effective heat dissipation for high-power applications.
These features make the IPD90N06S4-05 suitable for use in power supplies, motor drives, and other high-performance electronic circuits.
Package
The IPD90N06S4-05 is typically packaged in a TO-220 package type. This packaging is designed for efficient thermal management and provides a robust structure for power applications.
Pinout
The IPD90N06S4-05 is a N-channel MOSFET typically used in power management applications. It features a pin count of 3, which includes the following functions:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): This pin is where the load is connected. The drain allows current to flow out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin serves as the return path for the current. It is connected to the ground or the negative side of the circuit.
The IPD90N06S4-05 is designed for applications requiring efficient switching with low on-state resistance, making it suitable for high-performance power applications.
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate regulates the current flow between the drain and source.
2. Drain (D): This pin is where the load is connected. The drain allows current to flow out of the MOSFET when it is in the 'on' state.
3. Source (S): This pin serves as the return path for the current. It is connected to the ground or the negative side of the circuit.
The IPD90N06S4-05 is designed for applications requiring efficient switching with low on-state resistance, making it suitable for high-performance power applications.
Manufacturer
The IPD90N06S4-05 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power semiconductors, particularly in areas such as MOSFETs, IGBTs, and power ICs. Infineon's products are widely used in various sectors, including automotive electronics, renewable energy systems, and consumer electronics, making it a crucial player in the semiconductor industry.
Application
The IPD90N06S4-05 is a MOSFET transistor commonly used in applications such as power management, motor control, DC-DC converters, and switching power supplies. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics where effective thermal management and energy efficiency are essential.
Equivalent
Equivalent products to the IPD90N06S4-05 MOSFET include the STP90N06, FQP90N06, and IRF3205. Ensure compatibility with specifications such as voltage, current, and RDS(on) ratings when selecting alternatives. Always verify the datasheet for specific applications and performance requirements.
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