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IPD90N04S4-04
MOSFETs N-Ch 40V 90A DPAK-2 OptiMOS-T2
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概述
Description
The IPD90N04S4-04 is a high-performance N-channel MOSFET designed for efficient power management in various applications. With a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 90A, it is suitable for high-current switching applications. The device features low on-resistance (Rds(on)) values, typically around 4 mΩ, which enhances efficiency by minimizing conduction losses.
This MOSFET is often used in power supply circuits, motor drivers, and other applications requiring rapid switching and high reliability. Its robust construction and thermal performance make it suitable for demanding conditions. The IPD90N04S4-04 is housed in a TO-220 package, providing good thermal dissipation.
With its combination of high efficiency and high current capacity, it is ideal for applications in automotive, industrial, and consumer electronics sectors, enabling improved performance and thermal management in power systems.
This MOSFET is often used in power supply circuits, motor drivers, and other applications requiring rapid switching and high reliability. Its robust construction and thermal performance make it suitable for demanding conditions. The IPD90N04S4-04 is housed in a TO-220 package, providing good thermal dissipation.
With its combination of high efficiency and high current capacity, it is ideal for applications in automotive, industrial, and consumer electronics sectors, enabling improved performance and thermal management in power systems.
Features
The IPD90N04S4-04 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 90A, allowing it to drive high loads efficiently.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 4 mΩ, which reduces power losses during operation.
4. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications involving PWM and high-frequency switching.
5. Thermal Performance: It has a good thermal resistance, ensuring reliable operation in demanding environments.
6. Package Type: The device is commonly available in a TO-220 package, facilitating effective heat dissipation.
These features make the IPD90N04S4-04 suitable for various applications, including motor control, power supplies, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 90A, allowing it to drive high loads efficiently.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 4 mΩ, which reduces power losses during operation.
4. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for applications involving PWM and high-frequency switching.
5. Thermal Performance: It has a good thermal resistance, ensuring reliable operation in demanding environments.
6. Package Type: The device is commonly available in a TO-220 package, facilitating effective heat dissipation.
These features make the IPD90N04S4-04 suitable for various applications, including motor control, power supplies, and automotive systems.
Package
The IPD90N04S4-04 is packaged in a DPAK (TO-252) package type. This package is designed for surface mounting and features a compact design suitable for power applications, providing efficient thermal management.
Pinout
The IPD90N04S4-04 is an N-channel MOSFET with a TO-220 package. It features a total of three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied here allows current to flow from drain to source.
2. Drain (D): This pin is where the current enters the device when it is in the 'on' state.
3. Source (S): This pin is where the current exits the device.
The IPD90N04S4-04 is designed for high-efficiency applications and can handle significant power levels, making it suitable for various power management tasks in electronic circuits.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied here allows current to flow from drain to source.
2. Drain (D): This pin is where the current enters the device when it is in the 'on' state.
3. Source (S): This pin is where the current exits the device.
The IPD90N04S4-04 is designed for high-efficiency applications and can handle significant power levels, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IPD90N04S4-04 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, sensors, and other electronic components. The company serves various industries, including automotive, industrial, and consumer electronics, and is known for its innovative solutions in power management, automotive safety, and connectivity technologies. Infineon plays a significant role in advancing energy efficiency and providing high-performance semiconductor solutions worldwide.
Application
The IPD90N04S4-04 is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drives, and power supply circuits. Its low on-resistance and high-speed switching capabilities make it suitable for automotive applications, industrial automation, and consumer electronics. Additionally, it is ideal for use in renewable energy systems, such as solar inverters and battery management systems.
Equivalent
The IPD90N04S4-04 is an N-channel MOSFET with specific voltage and current ratings. Equivalent products include:
1. STP90N04L
2. IRF320
3. FQP90N04
4. BUK9YB90-40
Always verify specifications like V_DS, I_D, and R_DS(on) before substitution.
1. STP90N04L
2. IRF320
3. FQP90N04
4. BUK9YB90-40
Always verify specifications like V_DS, I_D, and R_DS(on) before substitution.
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