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IPD70N10S3-12

Name: IPD70N10S3-12
Rating: 4.7 (12 reviews)

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資料表 IPD70N10S3-12 DataSheet
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規格

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Factory Pack Quantity:Factory Pack Quantity	2500
Technology	Si
REACH - SVHC	Details
Mounting Style	SMD/SMT
Package / Case	DPAK-3 (TO-252-3)
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	70 A
Rds On - Drain-Source Resistance	11.1 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	51 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	125 W
Channel Mode	Enhancement
Tradename	OptiMOS
Configuration	Single
Fall Time	8 ns
Height	2.3 mm
Length	6.5 mm
Rise Time	8 ns
Series	OptiMOS-T
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	17 ns
Width	6.22 mm
Part # Aliases	SP000427248 IPD7N1S312XT IPD70N10S312ATMA1
Unit Weight	0.139332 oz
Qualification	AEC-Q100

概述

Description

The IPD70N10S3-12 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications, particularly in power electronics. It features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 70A, making it suitable for high-voltage and high-current applications.
This MOSFET is optimized for low on-resistance (RDS(on)), contributing to improved efficiency and thermal performance in circuits. With a fast switching speed, it is ideal for use in power supplies, DC-DC converters, and motor control applications.
The "S3" in its designation indicates a specific packaging and technology version, often linked to enhanced thermal performance and reliable operation. The IPD70N10S3-12 is particularly valuable in applications requiring robust performance and reliability, such as automotive and industrial systems.
Overall, the IPD70N10S3-12 is a versatile component for engineers seeking efficient and reliable electronic solutions.

Features

The IPD70N10S3-12 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is rated at 70A, allowing it to handle substantial loads.
3. R_DS(on): The on-resistance is low (around 12 mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges between 2-4V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: It features fast switching characteristics, ideal for applications like switch-mode power supplies and motor drives.
6. Package: Available in a TO-220 package, it provides good thermal performance and ease of heat dissipation.
Overall, the IPD70N10S3-12 is optimized for high-performance, low-loss power management applications.

Package

The IPD70N10S3-12 is typically available in a TO-220 package type. This package is designed for easy heat dissipation and is commonly used in power applications, providing robust performance for MOSFET devices.

Pinout

The IPD70N10S3-12 is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows for the control of current flow between the drain and source.

2. Drain (D): This pin is where the load current enters the MOSFET. The drain is connected to the higher voltage side of the circuit.
3. Source (S): This pin is where the load current exits the MOSFET. It is typically connected to ground or the lower voltage side of the circuit.
The IPD70N10S3-12 is designed for high-performance switching applications, featuring low on-resistance and high-speed switching capabilities.

Manufacturer

The IPD70N10S3-12 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in high-volume production of essential semiconductor components, including discrete transistors, diodes, and integrated circuits. The company focuses on providing robust and reliable products for various applications, particularly in automotive, industrial, and consumer electronics markets. Nexperia is known for its commitment to quality and efficiency in manufacturing, leveraging advanced packaging and technology to deliver innovative solutions in the semiconductor industry.

Application

The IPD70N10S3-12 is a high-performance N-channel MOSFET commonly used in applications such as power supplies, motor drives, and switching regulators. It is suitable for automotive, industrial, and consumer electronics due to its low on-resistance and high efficiency. Additionally, it can be employed in DC-DC converters, battery management systems, and other circuits requiring efficient power handling and thermal performance.

Equivalent

The IPD70N10S3-12 is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP75NF75
3. FDP7530
4. BSC032N10NS3
5. PSMN2R8-80BS
Always verify specifications such as voltage, current rating, and RDS(on) to ensure compatibility for your application.