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IPD65R660CFD

Name: IPD65R660CFD
Rating: 4.7 (12 reviews)

IPD65R660 - 650V AND 700V COOLMO

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資料表 IPD65R660CFD DataSheet
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規格

Supplier	Rochester Electronics, LLC
Package	Bulk
Series	CoolMOS™ CFD2
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	650 V
Current-ContinuousDrain(Id)@25°C	6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	660mOhm @ 2.1A, 10V
Vgs(th)(Max)@Id	4.5V @ 200µA
GateCharge(Qg)(Max)@Vgs	22 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	615 pF @ 100 V
PowerDissipation(Max)	62.5W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PG-TO252-3-313

概述

Description

IPD65R660CFD is Infineon’s Intelligent Power Device (IPD) – a high-voltage, high-current N-channel MOSFET with integrated protection and gate-drive features in a compact package. It targets switching power applications such as power supplies, motor drives, and inverters, offering rugged operation in automotive and industrial environments.
Key points:
- Voltage rating around 650 V; current rating and Rds(on) depend on the exact variant.
- Fast switching capability with built-in protections (e.g., overcurrent, overtemperature, undervoltage) and fault reporting.
- Typically used with an isolated gate driver or as part of an IPD-ready design, in a package denoted by the CFD suffix.
For precise electrical specs (Rds(on), Id, switching performance, thermal characteristics, pinout, and packaging details), consult the official Infineon IPD65R660CFD datasheet or product brief. If you want, I can summarize the exact datasheet once you provide it or share a link.

Features

I don’t have the exact datasheet on hand. Here are typical features for an IPD65R660CFD–type Intelligent Power Device (650 V class, ~65 A):
- Voltage/current rating: around 650 V blocking; about 65 A continuous current
- Device type: Intelligent Power Device (IPD) with integrated power switches (IGBTs or similar) and fast freewheeling diodes
- Packaging: single, isolated power-package suitable for module/motor-drive use
- Switching tech: efficient, low Vce(sat) or Rds(on) with good switching performance
- Protections: built-in safeguards (undervoltage lockout, overcurrent/short-circuit protection, overtemperature protection)
- Gate drive: compatible with standard IGBT gate-drive levels; insulated gate interface
- dv/dt robustness: designed for high dv/dt environments common in inverters and motor drives
- Applications: motor drives, inverters, switched-mode power supplies, renewable energy inverters
Note: for exact specs (pinout, packaging, thermal characteristics, precise protection modes), please refer to the official datasheet or provide a link.

Package

I don’t have live web access to confirm part details. Would you like me to look up the IPD65R660CFD datasheet and report the exact package type?

Pinout

- Pin count: 3 functional leads (Gate, Drain, Source). The Drain is also connected to the exposed tab.
- Pin functions: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The tab is tied to the Drain.
- Overall function: A single N-channel enhancement-mode power MOSFET used as the switching element in power electronics.

Manufacturer

The IPD65R660CFD is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that designs and manufactures power semiconductors and system solutions (MOSFETs/IGBTs, power ICs, sensors and microcontrollers) for automotive, industrial, and consumer electronics markets.

Application

IPD65R660CFD is an intelligent power device (IPD) for high-voltage switching in power electronics. Common applications include:
- Motor drives (DC/BLDC/PM motors)
- Switch-mode power supplies and DC-DC converters
- Solar PV inverters and energy storage systems
- Uninterruptible power supplies and telecom power systems
- Automotive/industrial power electronics and high-side/low-side switching in power stages