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IPD65R600C6

Name: IPD65R600C6
Rating: 4.7 (12 reviews)

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資料表 IPD65R600C6 DataSheet
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規格

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Factory Pack Quantity:Factory Pack Quantity	2500
Technology	Si
Shipping Restrictions	Mouser does not presently sell this product in your region.
REACH - SVHC	Details
Mounting Style	SMD/SMT
Package / Case	DPAK-3 (TO-252-3)
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	7.3 A
Rds On - Drain-Source Resistance	540 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.5 V
Qg - Gate Charge	23 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	63 W
Channel Mode	Enhancement
Tradename	CoolMOS
Configuration	Single
Fall Time	13 ns
Height	2.3 mm
Length	6.5 mm
Rise Time	9 ns
Series	CoolMOS C6
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	80 ns
Typical Turn-On Delay Time	12 ns
Width	6.22 mm
Part # Aliases	IPD65R6C6XT SP000745020 IPD65R600C6BTMA1
Unit Weight	0.011640 oz

概述

Description

The IPD65R600C6 is a N-channel Power MOSFET designed for high-efficiency applications. It is part of the Infineon CoolMOS™ series and is optimized for use in power supplies, motor drives, and other switching applications. The device features a 650V voltage rating and a maximum continuous drain current of 65A, making it suitable for high-voltage and high-current environments.
Key characteristics include low on-resistance (RDS(on)), which results in reduced conduction losses, and fast switching speeds that minimize switching losses. Its low gate charge enhances efficiency, particularly in applications such as DC-DC converters and inverters. The IPD65R600C6 is housed in a TO-220 package, allowing for effective heat dissipation.
Overall, the IPD65R600C6 is ideal for designers seeking to improve thermal performance and energy efficiency in power electronic systems.

Features

The IPD65R600C6 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of up to 65A, allowing for robust performance in power applications.
3. R_DS(on): Low on-resistance of approximately 0.65 ohms, which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, facilitating easy drive compatibility.
5. Fast Switching Speed: Suitable for high-frequency applications, ensuring minimal switching losses.
6. Thermal Performance: Available in a TO-247 package, which provides effective heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and other high-voltage switching applications.
This MOSFET is optimized for energy-efficient designs in various electronic applications, contributing to reduced overall system power consumption.

Package

The IPD65R600C6 is packaged in a TO-220 form factor, which is a popular package type for power transistors and MOSFETs, providing efficient heat dissipation and easy mounting for thermal management in electronic circuits.

Pinout

The IPD65R600C6 is an N-channel MOSFET designed for high-performance applications. It features a total of 4 pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.

2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the common return path for current.
4. Tab (or case): Often used for heat dissipation, this is not a pin in the traditional sense but is connected to the source internally.
The IPD65R600C6 is optimized for applications like power supplies and motor drives, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating that supports high current levels.

Manufacturer

The IPD65R600C6 is manufactured by Infineon Technologies, a global leader in semiconductor solutions. Infineon is a multinational company based in Germany, specializing in various sectors including automotive, industrial power control, and security technology. They produce a wide range of products, including power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and connectivity for smart systems. Infineon plays a significant role in advancing technologies related to renewable energy, electric vehicles, and the Internet of Things (IoT).

Application

The IPD65R600C6 is an N-channel MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drives, and inverters. Its features, including high voltage and current handling capabilities, make it suitable for industrial automation, renewable energy systems, electric vehicles, and consumer electronics.

Equivalent

The IPD65R600C6 is an N-channel MOSFET used in power applications. Equivalent products include the IRF3205, STP60NF06, and BSC100N06LS. Always verify specifications such as Vds, Id, Rds(on), and package type for compatibility.