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IPD60R360P7S

Name: IPD60R360P7S
Rating: 4.7 (12 reviews)

MOSFETs CONSUMER

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資料表 IPD60R360P7S DataSheet
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概述

Description

The IPD60R360P7S is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications, such as inverters and power supplies. It is part of the Infineon product line, specifically targeting automotive and industrial markets.
Key specifications of the IPD60R360P7S include a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) rating of around 60A. The device features low on-resistance (RDS(on)) values, which minimize conduction losses, enhancing overall efficiency.
The MOSFET is designed for fast switching performance, making it suitable for high-frequency applications. Its robust construction includes a temperature range for operation, ensuring reliability in demanding environments.
Overall, the IPD60R360P7S is ideal for applications requiring high power handling, efficiency, and reliability, such as in power converters, motor drives, and renewable energy systems.

Features

The IPD60R360P7S is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 60A, allowing for significant power handling.
3. On-Resistance: Low on-resistance (R_DS(on)) of 0.36 Ohm, which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: Gate-to-source threshold voltage (V_GS(th)) typically between 2-4V, enabling easy interfacing with standard control circuits.
5. Fast Switching: Features a high-speed switching capability that is beneficial for applications like converters and inverters.
6. Thermal Characteristics: Good thermal performance with low thermal resistance, helping to manage heat dissipation effectively.
Overall, the IPD60R360P7S is ideal for applications in power supplies, motor drives, and industrial control systems, providing reliable performance and efficiency.

Package

The IPD60R360P7S is packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient heat dissipation and robust electrical performance.

Pinout

The IPD60R360P7S is an N-channel MOSFET designed for power management applications. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): The output terminal where the load is connected; current flows from drain to source when the MOSFET is on.
3. Source (S): The terminal connected to ground or the negative side of the power supply; current flows from source to drain when the MOSFET is on.
4. Body Diode: Internal diode between the source and drain that allows current to flow in the reverse direction when the MOSFET is off.
The device is rated for a maximum drain-source voltage (V_DS) of 360 V and a continuous drain current (I_D) of 60 A, making it suitable for high-voltage applications.

Manufacturer

The IPD60R360P7S is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, catering to a wide range of industries to enhance energy efficiency and reliability in electronic systems. Infineon is recognized for its innovation and leadership in the semiconductor market, focusing on sustainable technology solutions.

Application

The IPD60R360P7S is an N-channel power MOSFET used primarily in applications such as power supplies, motor drives, and inverter circuits. Its high switching speed and efficiency make it suitable for renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be utilized in DC-DC converters and power management systems, contributing to energy efficiency in various electronic devices.

Equivalent

The IPD60R360P7S is a 600V, 360A IGBT. Equivalent products include the Infineon IGBT models like the IKW60N60H3 and the Vishay IGBT types such as the SGW60N60. Always check the datasheets for specific electrical characteristics and packaging to ensure compatibility for your application.