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IPD60R360P7

Name: IPD60R360P7
Rating: 4.7 (12 reviews)

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資料表 IPD60R360P7 DataSheet
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規格

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Technology	Si

概述

Description

The IPD60R360P7 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Manufactured by Infineon Technologies, it features a voltage rating of 600V and a continuous current rating of 60A, making it suitable for high-voltage power supplies and motor drives. The device boasts low on-resistance (RDS(on)), which enhances efficiency by minimizing power loss during operation.
With a maximum gate-source voltage of ±20V, the IPD60R360P7 is designed for robust performance in demanding environments. It typically comes in a TO-247 package, facilitating easy heat dissipation and integration into various circuit designs.
This MOSFET is well-suited for applications like solar inverters, UPS systems, and industrial power converters, where reliability and thermal performance are critical. Overall, the IPD60R360P7 is a reliable choice for engineers looking to optimize their designs in high-voltage, high-current scenarios.

Features

The IPD60R360P7 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: With a maximum continuous drain current (ID) of 60A, it can handle significant loads.
3. RDS(on): The on-resistance is low, typically around 0.36 ohms, which helps reduce power losses and improve efficiency.
4. Fast Switching: It provides fast switching capabilities, enhancing performance in switching applications.
5. Thermal Management: Designed with a robust package that aids in heat dissipation, it allows for reliable operation at high temperatures.
6. Applications: Suitable for use in power supplies, motor drives, and other power management systems.
Overall, the IPD60R360P7 is optimized for applications requiring high efficiency and thermal performance in demanding environments.

Package

The IPD60R360P7 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and easy mounting options.

Pinout

The IPD60R360P7 is an N-channel MOSFET designed for high-efficiency applications. It has a total of 7 pins. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET and allows for switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
The specific pin arrangement may vary depending on the package type, but the most common configurations include TO-220 or DPAK packages. The MOSFET features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 60A, making it suitable for power switching applications. It is often used in power supplies, motor controllers, and other high-voltage applications.

Manufacturer

The IPD60R360P7 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in providing semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its focus on innovation in power semiconductors, microcontrollers, and sensors, and it plays a significant role in the development of technologies for energy efficiency, connectivity, and security. Infineon is headquartered in Neubiberg, Germany, and operates on a worldwide scale, catering to diverse markets with a strong emphasis on sustainability and advancing technology.

Application

The IPD60R360P7 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications. Its primary application areas include industrial motor drives, renewable energy systems (such as solar inverters), power supplies, and railway traction systems. It is also used in applications requiring efficient switching and high voltage capabilities, such as welding equipment and electric vehicles.

Equivalent

The IPD60R360P7 is an N-channel MOSFET with a 600V rating and a drain current of 60A. Equivalent products include:
1. IRF840 - 500V, 8A
2. STP60NF06 - 60V, 60A
3. MTP50N60E - 600V, 50A
4. FQP60N60 - 600V, 60A
Ensure to check specific ratings and performance characteristics as they may vary.