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IPD60R180P7S

Name: IPD60R180P7S
Rating: 4.7 (12 reviews)

MOSFETs CONSUMER

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資料表 IPD60R180P7S DataSheet
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概述

Description

The IPD60R180P7S is a high-performance N-channel MOSFET designed for various applications, including power management and industrial systems. It features a maximum continuous drain current of 60A and a maximum drain-source voltage of 180V. The device is built using state-of-the-art technology to ensure low on-resistance (RDS(on)), which minimizes power loss and enhances efficiency.
Key specifications include a maximum gate-source voltage of ±20V, a low thermal resistance, and high-speed switching capabilities, making it suitable for use in DC-DC converters, motor drives, and other power electronics. The package type typically used is TO-247, which provides effective heat dissipation.
Overall, the IPD60R180P7S is ideal for engineers seeking reliable, efficient power switching solutions in demanding environments.

Features

The IPD60R180P7S is a Power MOSFET featuring a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 180A, making it suitable for high-voltage applications. It boasts a low on-resistance (RDS(on)) of approximately 180 mΩ, which enhances efficiency by minimizing conduction losses. This device is designed for use in power management systems, including switching power supplies, motor drives, and inverters.
Key features include:
- High Voltage Rating: Supports up to 600V for reliable operation in high-voltage environments.
- Low On-Resistance: Reduces power dissipation, improving efficiency in circuits.
- Fast Switching Speed: Ideal for high-frequency applications.
- Thermal Performance: Capable of handling high thermal loads, with robust thermal characteristics.
The IPD60R180P7S is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting in various electronic designs.

Package

The IPD60R180P7S is packaged in a TO-247 format. This package type is known for its robust construction, suitable for high-power applications, offering good thermal performance and ease of mounting.

Pinout

The IPD60R180P7S is an N-channel MOSFET with a total of 7 pins. Its primary function is to act as a switch or amplifier in various electronic circuits. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching (turning it on or off).
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current enters the device.
The specific roles of additional pins can vary based on the package type, but generally, the main function revolves around high-speed switching and efficient power handling suitable for applications like power supplies, motor control, and other power management systems. The IPD60R180P7S is noted for its low on-resistance and high efficiency, making it suitable for high-performance applications.

Manufacturer

The IPD60R180P7S is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Munich, Germany. Infineon specializes in developing and supplying a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various sectors, such as automotive, industrial, and consumer electronics. Infineon is particularly known for its expertise in power management and energy efficiency technologies, which are crucial for applications in electric vehicles, renewable energy systems, and smart grids.

Application

The IPD60R180P7S is a high-performance N-channel MOSFET, primarily used in power electronics applications such as DC-DC converters, motor drives, and power management systems. Its features make it suitable for high-efficiency switching applications in renewable energy systems, industrial automation, and electric vehicles. Additionally, it can be utilized in consumer electronics for power supply circuits, ensuring efficient operation and thermal management.

Equivalent

The IPD60R180P7S is a 600V, 180A N-channel IGBT. Equivalent products include the Infineon IGBT modules like the IKW60N180T2 and the Mitsubishi CM600HA-24H. Other alternatives may include the ON Semiconductor NGTB25N60 and the STMicroelectronics STGW30H60. Always check specific datasheets for compatibility and performance characteristics.