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IPD50P03P4L-11
MOSFET P-CH 30V 50A DPAK
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| Part Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
The IPD50P03P4L-11 is a N-channel Power MOSFET designed for efficient power management applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 50A, making it suitable for high-power applications such as DC-DC converters, motor drivers, and power management circuits.
Key specifications include a low on-resistance (R_DS(on)) of around 4.5 mΩ, which contributes to reduced conduction losses and improved thermal performance. The device is packaged in a DPAK format, facilitating easy heat dissipation. It also exhibits fast switching capabilities, essential for high-frequency applications.
The IPD50P03P4L-11 is optimized for low-voltage applications and is commonly used in automotive, industrial, and consumer electronics. Its robust performance and reliability make it a preferred choice among engineers looking for efficient power solutions.
Key specifications include a low on-resistance (R_DS(on)) of around 4.5 mΩ, which contributes to reduced conduction losses and improved thermal performance. The device is packaged in a DPAK format, facilitating easy heat dissipation. It also exhibits fast switching capabilities, essential for high-frequency applications.
The IPD50P03P4L-11 is optimized for low-voltage applications and is commonly used in automotive, industrial, and consumer electronics. Its robust performance and reliability make it a preferred choice among engineers looking for efficient power solutions.
Features
The IPD50P03P4L-11 is a N-channel MOSFET designed for use in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Continuous Drain Current: It can handle a continuous current of up to 50A, making it suitable for high-power applications.
3. On-Resistance (Rds(on)): The on-resistance is low, typically around 4.5 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for efficient drive with lower gate voltages.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and heat dissipation.
6. Applications: Commonly used in switch-mode power supplies, motor drives, and DC-DC converters due to its efficiency and robust performance.
Overall, the IPD50P03P4L-11 is ideal for applications requiring high current handling and low power loss.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V.
2. Continuous Drain Current: It can handle a continuous current of up to 50A, making it suitable for high-power applications.
3. On-Resistance (Rds(on)): The on-resistance is low, typically around 4.5 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for efficient drive with lower gate voltages.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and heat dissipation.
6. Applications: Commonly used in switch-mode power supplies, motor drives, and DC-DC converters due to its efficiency and robust performance.
Overall, the IPD50P03P4L-11 is ideal for applications requiring high current handling and low power loss.
Package
The IPD50P03P4L-11 is packaged in a DPAK (also known as TO-252) format, which is a surface-mount package designed for power MOSFETs. This package type allows for efficient thermal performance and minimization of board space.
Pinout
The IPD50P03P4L-11 is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is where the current flows out of the MOSFET. It is the terminal through which the load is connected.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply. It is the terminal through which current enters the MOSFET.
The IPD50P03P4L-11 is designed for applications such as power management and switching, providing low on-resistance and high-efficiency switching capabilities.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is where the current flows out of the MOSFET. It is the terminal through which the load is connected.
3. Source (S): This pin is connected to the ground or the negative terminal of the power supply. It is the terminal through which current enters the MOSFET.
The IPD50P03P4L-11 is designed for applications such as power management and switching, providing low on-resistance and high-efficiency switching capabilities.
Manufacturer
The manufacturer of the IPD50P03P4L-11 is Infineon Technologies AG. Infineon is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions. Their product portfolio includes power semiconductors, microcontrollers, sensors, and automotive solutions. Infineon serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and performance. The company is recognized for its innovation in power management and is a key player in the semiconductor market.
Application
The IPD50P03P4L-11 is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor control, power supply circuits, and battery management systems. Additionally, it is suitable for automotive applications, industrial automation, and renewable energy systems due to its efficiency and thermal performance.
Equivalent
The IPD50P03P4L-11 is a N-channel MOSFET. Equivalent products include the IRF3205, STP50P03, and FDS5035. Always verify specifications like voltage, current rating, and R_DS(on) to ensure compatibility for your specific application.
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