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IPD50N04S4-10
MOSFETs N-Ch 40V 50A DPAK-2 OptiMOS-T2
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- 資料表 IPD50N04S4-10 DataSheet
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| Packaging | Cut Tape |
| Standard Pack Qty | 2500 |
概述
Description
The IPD50N04S4-10 is a high-performance N-channel MOSFET designed for use in various power applications, including automotive and industrial systems. It features a low on-resistance (R_DS(on)) of 4.5 mΩ, which allows for efficient power management and reduced heat generation during operation. The device can handle a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 50A, making it suitable for high-current applications.
This MOSFET is housed in a TO-220 package, facilitating effective thermal dissipation. The IPD50N04S4-10 is optimized for use in synchronous rectification, DC-DC converters, and motor control systems. Its fast switching capabilities contribute to improved efficiency in power conversion processes. Additionally, the part is designed to be robust, with built-in protection features that enhance reliability in demanding environments. Overall, the IPD50N04S4-10 is an ideal choice for engineers seeking efficient and reliable power solutions.
This MOSFET is housed in a TO-220 package, facilitating effective thermal dissipation. The IPD50N04S4-10 is optimized for use in synchronous rectification, DC-DC converters, and motor control systems. Its fast switching capabilities contribute to improved efficiency in power conversion processes. Additionally, the part is designed to be robust, with built-in protection features that enhance reliability in demanding environments. Overall, the IPD50N04S4-10 is an ideal choice for engineers seeking efficient and reliable power solutions.
Features
The IPD50N04S4-10 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power switching applications.
2. Current Rating: The continuous drain current (ID) is 50A, allowing it to handle significant loads.
3. RDS(on): It offers low on-resistance (RDS(on)), typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, enabling easy driving with low-voltage gate signals.
5. Package: It is available in a DPAK or TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, making it suitable for applications like DC-DC converters, motor drivers, and power management systems.
These features make the IPD50N04S4-10 an effective choice for engineers looking for reliable MOSFETs in power electronics.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power switching applications.
2. Current Rating: The continuous drain current (ID) is 50A, allowing it to handle significant loads.
3. RDS(on): It offers low on-resistance (RDS(on)), typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, enabling easy driving with low-voltage gate signals.
5. Package: It is available in a DPAK or TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching: The device supports fast switching speeds, making it suitable for applications like DC-DC converters, motor drivers, and power management systems.
These features make the IPD50N04S4-10 an effective choice for engineers looking for reliable MOSFETs in power electronics.
Package
The IPD50N04S4-10 is packaged in a TO-220 form factor. This package type is commonly used for power transistors and provides good thermal performance and ease of mounting.
Pinout
The IPD50N04S4-10 is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the power supply; current flows out of the source when the MOSFET is conducting.
4. Body Diode - Although not a pin, the MOSFET includes an intrinsic body diode that allows current to flow from source to drain in the reverse direction.
5. Tab (often used for heat dissipation) - Can be connected to the source for thermal management.
The IPD50N04S4-10 is designed for applications requiring high efficiency and fast switching capabilities, commonly used in power management and switching power supplies.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the power supply; current flows out of the source when the MOSFET is conducting.
4. Body Diode - Although not a pin, the MOSFET includes an intrinsic body diode that allows current to flow from source to drain in the reverse direction.
5. Tab (often used for heat dissipation) - Can be connected to the source for thermal management.
The IPD50N04S4-10 is designed for applications requiring high efficiency and fast switching capabilities, commonly used in power management and switching power supplies.
Manufacturer
The IPD50N04S4-10 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Germany, specializing in a variety of semiconductor products and solutions. The company focuses on areas such as automotive, industrial power control, and security technologies. Infineon is known for its innovation in power semiconductors, microcontrollers, and sensors, serving various markets including automotive, consumer electronics, and industrial applications.
Application
The IPD50N04S4-10 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and power supply circuits. Its high switching speed and low on-resistance make it suitable for battery management systems and automotive applications, such as electric vehicles. Additionally, it can be used in industrial automation, renewable energy systems, and consumer electronics for efficient power switching and control.
Equivalent
The IPD50N04S4-10 is a Power MOSFET with similar equivalents including the IRF3205, STP50N04L, and FQP50N04. Always verify specifications like voltage, current, and R_DS(on) to ensure compatibility in your application.
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