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IPD30N10S3L-34
MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T
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| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
概述
Description
The IPD30N10S3L-34 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 30A, making it suitable for various applications including power supplies, motor drives, and automotive systems.
This MOSFET is characterized by a low on-resistance (R_DS(on)), which enhances energy efficiency by reducing power losses during operation. Its fast switching speeds make it ideal for high-frequency applications. The device is typically housed in a TO-220 package, facilitating easy heat dissipation.
The IPD30N10S3L-34 is often utilized in designs aiming for energy efficiency and thermal management, contributing to improved overall system performance. Proper thermal management is crucial when utilizing this MOSFET in high-power applications to ensure reliability and longevity. Always consult the datasheet for specific electrical characteristics and thermal performance guidelines.
This MOSFET is characterized by a low on-resistance (R_DS(on)), which enhances energy efficiency by reducing power losses during operation. Its fast switching speeds make it ideal for high-frequency applications. The device is typically housed in a TO-220 package, facilitating easy heat dissipation.
The IPD30N10S3L-34 is often utilized in designs aiming for energy efficiency and thermal management, contributing to improved overall system performance. Proper thermal management is crucial when utilizing this MOSFET in high-power applications to ensure reliability and longevity. Always consult the datasheet for specific electrical characteristics and thermal performance guidelines.
Features
The IPD30N10S3L-34 is a N-channel MOSFET designed for power applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V.
2. Current Rating: Capable of handling a continuous drain current (ID) of up to 30A.
3. RDS(on): Low on-resistance (RDS(on)) reduces conduction losses, typically around 10mΩ at VGS = 10V.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2-4V, suitable for logic-level gate driving.
5. Fast Switching: Designed for high-speed switching applications, improving efficiency.
6. Package Type: Available in a TO-220 package, facilitating thermal management.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.
These features make the IPD30N10S3L-34 an ideal choice for various demanding power electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V.
2. Current Rating: Capable of handling a continuous drain current (ID) of up to 30A.
3. RDS(on): Low on-resistance (RDS(on)) reduces conduction losses, typically around 10mΩ at VGS = 10V.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2-4V, suitable for logic-level gate driving.
5. Fast Switching: Designed for high-speed switching applications, improving efficiency.
6. Package Type: Available in a TO-220 package, facilitating thermal management.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.
These features make the IPD30N10S3L-34 an ideal choice for various demanding power electronic applications.
Package
The IPD30N10S3L-34 is packaged in a TO-220 form factor, which is a popular package type for power MOSFETs. This package provides efficient heat dissipation and is suitable for various high-power applications.
Pinout
The IPD30N10S3L-34 is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the main current enters the MOSFET when it is in the 'on' state. It connects to the load.
3. Source (S) - This pin is where the current exits the MOSFET when it is conducting. It usually connects to the ground or negative side of the power supply.
The device is designed for applications requiring efficient power management, such as in power converters and motor control circuits. The IPD30N10S3L-34 can handle high current and voltage levels, making it suitable for various power electronic applications.
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the main current enters the MOSFET when it is in the 'on' state. It connects to the load.
3. Source (S) - This pin is where the current exits the MOSFET when it is conducting. It usually connects to the ground or negative side of the power supply.
The device is designed for applications requiring efficient power management, such as in power converters and motor control circuits. The IPD30N10S3L-34 can handle high current and voltage levels, making it suitable for various power electronic applications.
Manufacturer
The IPD30N10S3L-34 is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and communication sectors. The company is known for its innovative technologies in power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and sustainability. Infineon plays a crucial role in enabling smart and efficient systems, contributing to advancements in the Internet of Things (IoT), electric vehicles, and renewable energy solutions.
Application
The IPD30N10S3L-34 is a N-channel MOSFET designed for applications such as power management, DC-DC converters, motor drives, and automotive systems. It is suitable for high-efficiency switching applications in industrial equipment, power supplies, and renewable energy systems. Its low on-resistance and high current handling capacity make it ideal for both consumer electronics and electric vehicles.
Equivalent
The IPD30N10S3L-34 is an N-channel MOSFET used in power applications. Equivalent products include:
1. IRF3205
2. STP30NF10
3. FQP30N10L
4. BUK9Y31-100E
Ensure to check specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
1. IRF3205
2. STP30NF10
3. FQP30N10L
4. BUK9Y31-100E
Ensure to check specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
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