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IPD30N03S2L-20
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規格
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Factory Pack Quantity:Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000254466 IPD3N3S2L2XT IPD30N03S2L20ATMA1 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 14.5 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 19 nC |
| Pd - Power Dissipation | 60 W |
| Channel Mode | Enhancement |
| Fall Time | 10 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time | 5 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
概述
Description
The IPD30N03S2L-20 is a N-channel MOSFET designed for high-efficiency power management applications. With a voltage rating of 30V and a continuous drain current of up to 30A, it is suitable for various applications such as power supplies, motor drives, and DC-DC converters. This device features low on-resistance (R_ds(on)), ensuring minimal power loss and improved thermal performance, which enhances overall system efficiency.
The IPD30N03S2L-20 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its fast switching capabilities make it ideal for high-frequency applications. The MOSFET is also designed to handle high pulsed currents, contributing to its versatility in demanding environments.
Additionally, it complies with industry standards for reliability and performance, making it a popular choice among engineers and designers in the field of power electronics. Overall, the IPD30N03S2L-20 is a reliable component for enhancing the efficiency and performance of various electronic systems.
The IPD30N03S2L-20 is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its fast switching capabilities make it ideal for high-frequency applications. The MOSFET is also designed to handle high pulsed currents, contributing to its versatility in demanding environments.
Additionally, it complies with industry standards for reliability and performance, making it a popular choice among engineers and designers in the field of power electronics. Overall, the IPD30N03S2L-20 is a reliable component for enhancing the efficiency and performance of various electronic systems.
Features
The IPD30N03S2L-20 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 30V, suitable for low-voltage applications.
2. Current Rating: Can handle up to 30A, making it ideal for power management.
3. RDS(on): Low on-resistance typically around 3.2 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: Typically between 1V to 2.5V, allowing for efficient drive at lower gate voltages.
5. Package Type: Usually available in a DPAK or similar package, facilitating heat dissipation and PCB integration.
6. Fast Switching: Designed for efficient switching, reducing transition losses in high-frequency applications.
7. Robustness: Well-suited for applications such as power supplies, DC-DC converters, and motor drive circuits.
These features make the IPD30N03S2L-20 a versatile choice for designers looking to optimize efficiency and performance in electronic circuits.
1. Voltage Rating: 30V, suitable for low-voltage applications.
2. Current Rating: Can handle up to 30A, making it ideal for power management.
3. RDS(on): Low on-resistance typically around 3.2 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: Typically between 1V to 2.5V, allowing for efficient drive at lower gate voltages.
5. Package Type: Usually available in a DPAK or similar package, facilitating heat dissipation and PCB integration.
6. Fast Switching: Designed for efficient switching, reducing transition losses in high-frequency applications.
7. Robustness: Well-suited for applications such as power supplies, DC-DC converters, and motor drive circuits.
These features make the IPD30N03S2L-20 a versatile choice for designers looking to optimize efficiency and performance in electronic circuits.
Package
The IPD30N03S2L-20 is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is suitable for power applications in electronic devices.
Pinout
The IPD30N03S2L-20 is an N-channel MOSFET typically used in power management applications. It comes in a TO-220 package, which has a pin count of three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the MOSFET on or off, allowing or interrupting current flow between the drain and source.
2. Drain (D): This pin is connected to the load. It is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in a circuit. It is the terminal through which current enters the MOSFET when it is turned on.
In summary, the IPD30N03S2L-20 has three pins (Gate, Drain, Source) and is designed for efficient switching in power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the MOSFET on or off, allowing or interrupting current flow between the drain and source.
2. Drain (D): This pin is connected to the load. It is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to ground or the lower potential in a circuit. It is the terminal through which current enters the MOSFET when it is turned on.
In summary, the IPD30N03S2L-20 has three pins (Gate, Drain, Source) and is designed for efficient switching in power applications.
Manufacturer
The IPD30N03S2L-20 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in products related to power management, automotive electronics, industrial automation, and security solutions, among others. Infineon is known for its innovative technologies in areas such as power semiconductors, microcontrollers, and sensors, serving a wide range of markets including automotive, industrial, and consumer electronics. Its focus on sustainability and energy efficiency makes it a key player in the semiconductor industry.
Application
The IPD30N03S2L-20 is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drivers, and power supplies. Its features make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and industrial automation. Additionally, it can be utilized in LED drivers and battery management systems, ensuring efficient power handling and thermal performance.
Equivalent
The IPD30N03S2L-20 is an N-channel MOSFET. Equivalent products include the IRF3205, STP30NF20, and BUK9530-55A. Always verify specifications like voltage, current, and R_DS(on) to ensure compatibility in your application.
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