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IPD200N15N3G

Name: IPD200N15N3G
Rating: 4.7 (12 reviews)

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規格

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Unconfirmed
HTS	8541.29.00.75
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Unknown
PPAP	Unknown
Product Category	Power MOSFET
Configuration	Single
Process Technology	OptiMOS 3
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	150
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	50
Maximum Drain Source Resistance (MOhm)	20@10V
Typical Gate Charge @ Vgs (nC)	23@10V
Typical Gate Charge @ 10V (nC)	23
Typical Input Capacitance @ Vds (pF)	1820@75V
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	6
Typical Rise Time (ns)	11
Typical Turn-Off Delay Time (ns)	23
Typical Turn-On Delay Time (ns)	14
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Packaging	Tape and Reel
Mounting	Surface Mount
Package Height	2.3
Package Width	6.22
Package Length	6.5
PCB changed	2
Standard Package Name	TO-252
Supplier Package	DPAK
Pin Count	3
Tab	Tab

概述

Description

The IPD200N15N3G is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance, allowing for efficient conduction and reduced power loss. With a maximum continuous drain current rating of 200A and a breakdown voltage of 150V, it is suitable for use in power supply circuits, motor drives, and other high-current applications.
The device is optimized for fast switching speeds, making it ideal for high-frequency applications, such as inverters and converters. Its robust construction ensures reliability under demanding conditions. The IPD200N15N3G is typically packaged in a TO-220 or similar housing, facilitating effective heat dissipation.
Overall, this MOSFET is well-regarded in the electronics industry for its performance, efficiency, and versatility, making it a popular choice among engineers for designing efficient power systems.

Features

The IPD200N15N3G is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (VDS) of 150V, making it suitable for high-voltage applications.
2. Continuous Current: Capable of handling a continuous drain current (ID) of up to 200A, allowing for robust performance in demanding environments.
3. Low On-Resistance: With a maximum RDS(on) of 10 mΩ at 10V gate drive, it minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for high-speed switching capabilities, improving overall system performance.
5. Thermal Stability: Equipped with a high thermal conductivity, enabling effective heat dissipation and reliability in operation.
6. Package Type: Available in a TO-247 package, which is suitable for various mounting configurations.
These features make the IPD200N15N3G ideal for applications in power supplies, motor drives, and other high-power electronics.

Package

The IPD200N15N3G is typically packaged in a DPAK (TO-252) format. This package type features a surface-mount design, allowing for efficient thermal performance and easy integration into various electronic applications.

Pinout

The IPD200N15N3G is an N-channel power MOSFET with a pin count of 8. Its primary function is to serve as a high-efficiency switch in various applications, including power management, DC-DC converters, and motor control.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The drain terminal where the current flows out.
3. Source (S) - The source terminal where current flows in.
4. Drain (D1) - Additional drain connection for parallel operation.
5. Source (S1) - Additional source connection for parallel operation.
6. Gate (G1) - Additional gate connection for parallel operation.
7. Tab (T) - Typically connected to the source for heat dissipation.
8. N/C (Not Connected) - No electrical connection.
This MOSFET is designed for high voltage and current applications, offering low on-resistance and fast switching speeds, making it suitable for high-efficiency designs.

Manufacturer

The IPD200N15N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The company is known for its innovations in power management, security technologies, and connectivity solutions. Infineon focuses on developing energy-efficient components that help enable sustainable and reliable electronic systems.

Application

The IPD200N15N3G is a N-channel MOSFET primarily used in power management applications. Its application areas include automotive power systems, DC-DC converters, motor control, and industrial power supplies. It is suited for high-efficiency switching and high-frequency operations, making it ideal for applications requiring low on-resistance and fast switching capabilities.

Equivalent

The IPD200N15N3G is an N-channel MOSFET. Equivalent products include the Infineon BSC200N15NS3, STMicroelectronics STP200N15, ON Semiconductor NTMFS200N15, and Vishay SiHD200N15. Always check the specific datasheets for exact specifications and compatibility, including RDS(on), gate threshold voltage, and package type.