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IPD079N06L3 G

Name: IPD079N06L3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 60V 50A DPAK-2 OptiMOS 3

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規格

Packaging	MouseReel
Standard Pack Qty	2500

概述

Description

IPD079N06L3 G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance (RDS(on)), allowing for efficient current handling and minimal power loss. With a maximum drain-source voltage (VDS) of 60V, it is suitable for medium-voltage applications. The device's high speed and thermal performance make it ideal for use in power supplies, motor drivers, and other high-efficiency circuits.
Key specifications include a low gate threshold voltage, ensuring it can be easily driven by standard logic-level signals. Its compact package design helps in saving space on PCBs, making it favorable for modern electronic designs. Overall, the IPD079N06L3 G is a reliable choice for designers seeking effective solutions in power electronics.

Features

The IPD079N06L3 G is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Max drain-source voltage (V_DS) of 60V, making it suitable for various power switching applications.
2. Current Rating: Continuous drain current (I_D) of 79A, providing high performance in demanding conditions.
3. Low R_DS(on): Features a low on-resistance (R_DS(on)) of approximately 0.0085 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) typically around 2-4V, allowing for easy drive with low-voltage logic levels.
5. Package Type: Available in a TO-220 package, facilitating robust thermal management and ease of mounting.
6. RoHS Compliant: Meets environmental standards, ensuring compliance for modern applications.
Overall, the IPD079N06L3 G is ideal for high-efficiency switching and power management in applications such as DC-DC converters and motor drives.

Package

The IPD079N06L3 G is packaged in a TO-247 format.

Pinout

The IPD079N06L3 G is a N-channel MOSFET designed for power applications. It comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET, allowing it to turn on (conduct) or off (not conduct) when a voltage is applied.

2. Drain (D): This pin is where the load current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
In summary, the IPD079N06L3 G features a three-pin configuration (Gate, Drain, Source) and is used primarily for switching and amplification in electronic circuits.

Manufacturer

The IPD079N06L3 G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in providing a wide range of products, including power semiconductors, microcontrollers, and sensors, which are used in various applications such as automotive, industrial, and consumer electronics. The company focuses on improving energy efficiency, safety, and convenience in electronic systems. Infineon is recognized for its innovative technologies and commitment to sustainability, making it a key player in the semiconductor industry.

Application

The IPD079N06L3 G is an N-channel MOSFET primarily used in power management applications. Its applications include DC-DC converters, motor drives, power supplies, and energy-efficient circuits. It is suitable for high-speed switching, making it ideal for consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and high current handling capabilities enhance efficiency in power conversion and distribution.

Equivalent

The IPD079N06L3 G is an N-channel MOSFET with a typical RDS(on) of 7.9 mΩ. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. When selecting a substitute, ensure similar voltage ratings, current capacity, and thermal characteristics for optimal performance. Always consult the datasheets for specific application requirements.