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IPD060N03LG
OPTLMOS N-CHANNEL POWER MOSFET
- 製造商
- 製造商。 部分 #IPD060N03LG
- 包 TO-252-3,DPak(2Leads+Tab),SC-63
- 資料表 IPD060N03LG DataSheet
- 有現貨的6173
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概述
Description
The IPD060N03LG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 60A, making it suitable for power management in various electronic circuits.
Key specifications include a low on-resistance (R_DS(on)) of approximately 6 milliohms, which minimizes conduction losses and improves overall efficiency. The device is optimized for fast switching speeds, essential for applications like DC-DC converters, motor drivers, and power supplies.
The IPD060N03LG is housed in a TO-220 package, offering good thermal performance and ease of mounting. Its robust design and high-performance characteristics make it a popular choice in automotive, industrial, and consumer electronics.
Overall, the IPD060N03LG is an effective solution for designers seeking to enhance the efficiency and reliability of their power electronics systems.
Key specifications include a low on-resistance (R_DS(on)) of approximately 6 milliohms, which minimizes conduction losses and improves overall efficiency. The device is optimized for fast switching speeds, essential for applications like DC-DC converters, motor drivers, and power supplies.
The IPD060N03LG is housed in a TO-220 package, offering good thermal performance and ease of mounting. Its robust design and high-performance characteristics make it a popular choice in automotive, industrial, and consumer electronics.
Overall, the IPD060N03LG is an effective solution for designers seeking to enhance the efficiency and reliability of their power electronics systems.
Features
The IPD060N03LG is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Low RDS(on): With a maximum on-resistance of just 6 mΩ, it ensures minimal power loss and high efficiency.
2. High Current Rating: Capable of handling continuous drain currents up to 60A, making it suitable for demanding applications.
3. Wide Voltage Range: It supports a maximum drain-source voltage (VDS) of 30V, allowing it to function effectively in various circuits.
4. Fast Switching Speed: Designed for high-speed operation, it minimizes switching losses, beneficial for power conversion and motor control.
5. Thermal Performance: Features a robust package that aids in efficient heat dissipation, enhancing reliability.
6. Suitable for SMD Applications: Packaged in a DPAK format, it is suitable for surface-mount technology, facilitating easy integration into modern PCBs.
These attributes make the IPD060N03LG ideal for applications such as power supplies, converters, and motor drivers.
1. Low RDS(on): With a maximum on-resistance of just 6 mΩ, it ensures minimal power loss and high efficiency.
2. High Current Rating: Capable of handling continuous drain currents up to 60A, making it suitable for demanding applications.
3. Wide Voltage Range: It supports a maximum drain-source voltage (VDS) of 30V, allowing it to function effectively in various circuits.
4. Fast Switching Speed: Designed for high-speed operation, it minimizes switching losses, beneficial for power conversion and motor control.
5. Thermal Performance: Features a robust package that aids in efficient heat dissipation, enhancing reliability.
6. Suitable for SMD Applications: Packaged in a DPAK format, it is suitable for surface-mount technology, facilitating easy integration into modern PCBs.
These attributes make the IPD060N03LG ideal for applications such as power supplies, converters, and motor drivers.
Package
The IPD060N03LG is packaged in a DPAK (also known as TO-252) type package. This package is designed for surface-mount applications and features a compact size suitable for power management in various electronic circuits.
Pinout
The IPD060N03LG is a N-channel MOSFET from Infineon Technologies. It features a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side. Current flows into this pin when the device is conducting.
The IPD060N03LG is designed for high-efficiency power management applications, offering low on-resistance and fast switching capabilities, making it suitable for various applications in power supplies and motor drives.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side. Current flows into this pin when the device is conducting.
The IPD060N03LG is designed for high-efficiency power management applications, offering low on-resistance and fast switching capabilities, making it suitable for various applications in power supplies and motor drives.
Manufacturer
The IPD060N03LG is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors for various applications such as automotive, industrial, and consumer electronics. The company is known for its innovative technologies, particularly in power management and energy efficiency, and plays a significant role in advancing solutions related to electric mobility and renewable energy.
Application
The IPD060N03LG is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor controls. Its low on-resistance and high efficiency make it suitable for battery management systems, electric vehicles, and renewable energy systems. Additionally, it can be employed in consumer electronics and industrial automation for switching applications.
Equivalent
The IPD060N03LG is a N-channel MOSFET designed for high-performance applications. Equivalent products include:
1. IRF320 (International Rectifier)
2. STP60NF06 (STMicroelectronics)
3. BSS138 (Nexperia)
4. FDG632P (Fairchild)
Always verify electrical characteristics and package compatibility when selecting alternatives.
1. IRF320 (International Rectifier)
2. STP60NF06 (STMicroelectronics)
3. BSS138 (Nexperia)
4. FDG632P (Fairchild)
Always verify electrical characteristics and package compatibility when selecting alternatives.
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