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IPD025N06N
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規格
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | OptiMOS 5 |
| Factory Pack Quantity:Factory Pack Quantity | 2500 |
| Subcategory | Transistors |
| Part # Aliases | SP000988276 IPD25N6NXT IPD025N06NATMA1 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
| Package / Case | DPAK-3 (TO-252-3) |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance | 2.1 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 83 nC |
| Pd - Power Dissipation | 167 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 20 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time | 16 ns |
| REACH - SVHC | Details |
| Forward Transconductance - Min | 80 S |
概述
Description
IPD025N06N is a N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance, typically around 25 mΩ, and a maximum drain-source voltage (Vds) of 60V. This component is suitable for various applications, including DC-DC converters, motor drivers, and power management systems due to its fast switching capabilities and high thermal performance.
With a maximum continuous drain current of up to 25A, the IPD025N06N is optimized for use in power electronics where efficiency and reliability are critical. Its compact package design facilitates easy integration into circuit boards, making it a popular choice among engineers.
Key specifications include a gate threshold voltage (Vgs(th)) typically between 2-4V, which allows for effective control with standard logic level signals. The device also features built-in protection against over-temperature and current overload, enhancing its durability in demanding applications. Overall, the IPD025N06N is a versatile MOSFET ideal for modern power electronic designs.
With a maximum continuous drain current of up to 25A, the IPD025N06N is optimized for use in power electronics where efficiency and reliability are critical. Its compact package design facilitates easy integration into circuit boards, making it a popular choice among engineers.
Key specifications include a gate threshold voltage (Vgs(th)) typically between 2-4V, which allows for effective control with standard logic level signals. The device also features built-in protection against over-temperature and current overload, enhancing its durability in demanding applications. Overall, the IPD025N06N is a versatile MOSFET ideal for modern power electronic designs.
Features
The IPD025N06N is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various high-voltage applications.
2. Current Capacity: It can handle a continuous drain current (Id) of up to 25A, providing significant power handling capability.
3. On-Resistance (Rds(on)): The MOSFET boasts a low on-resistance of approximately 0.025Ω, enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easy driving with standard control voltages.
5. Package Type: Typically available in a DPAK or TO-220 package, facilitating easy integration into various circuit designs.
6. High-Speed Switching: Suitable for fast switching applications, making it ideal for converters, inverters, and other power management circuits.
Overall, the IPD025N06N is favored for its robustness and efficiency in power electronics applications.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various high-voltage applications.
2. Current Capacity: It can handle a continuous drain current (Id) of up to 25A, providing significant power handling capability.
3. On-Resistance (Rds(on)): The MOSFET boasts a low on-resistance of approximately 0.025Ω, enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold voltage ranges from 2V to 4V, allowing for easy driving with standard control voltages.
5. Package Type: Typically available in a DPAK or TO-220 package, facilitating easy integration into various circuit designs.
6. High-Speed Switching: Suitable for fast switching applications, making it ideal for converters, inverters, and other power management circuits.
Overall, the IPD025N06N is favored for its robustness and efficiency in power electronics applications.
Package
The IPD025N06N is typically available in a TO-220 package type. This package is known for its excellent thermal performance and is commonly used for power MOSFET applications.
Pinout
The IPD025N06N is an N-channel MOSFET with a total of 5 pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): The source pin is the entry point for current into the MOSFET when it is conducting.
Additional pins may include:
4. Body Diode: Integrated within the MOSFET, this allows current to flow in the reverse direction when the device is off, protecting against reverse polarity.
5. Tab/Heat Sink: Often, the tab is connected to the source and can be used for heat dissipation.
The IPD025N06N is designed for high-efficiency applications and features a low on-resistance, making it suitable for power management in various electronic circuits.
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate turns the device on (conducting state) or off (non-conducting state).
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S): The source pin is the entry point for current into the MOSFET when it is conducting.
Additional pins may include:
4. Body Diode: Integrated within the MOSFET, this allows current to flow in the reverse direction when the device is off, protecting against reverse polarity.
5. Tab/Heat Sink: Often, the tab is connected to the source and can be used for heat dissipation.
The IPD025N06N is designed for high-efficiency applications and features a low on-resistance, making it suitable for power management in various electronic circuits.
Manufacturer
The IPD025N06N is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on energy efficiency and performance. Infineon is recognized for its innovations in power management and has a strong emphasis on developing technologies that support sustainability and advanced automotive applications.
Application
The IPD025N06N is an N-channel MOSFET commonly used in power electronics applications such as power supplies, DC-DC converters, motor drivers, and industrial control systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power management, including in automotive and renewable energy systems like solar inverters. Additionally, it can be used in consumer electronics for battery management and load switching.
Equivalent
The IPD025N06N is an N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP75NF06, SPP75N06S5, and FQP75N06. Always check specifications like voltage, current ratings, and R_DS(on) for compatibility.
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