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IPB80N06S2-08

Name: IPB80N06S2-08
Rating: 4.7 (12 reviews)

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資料表 IPB80N06S2-08 DataSheet
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規格

Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFETs
Subcategory	Transistors
Factory Pack Quantity:Factory Pack Quantity	1000
Technology	Si
Shipping Restrictions	Mouser does not presently sell this product in your region.
Mounting Style	SMD/SMT
Package / Case	D2PAK-3 (TO-263-3)
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	80 A
Rds On - Drain-Source Resistance	7.7 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	215 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	14 ns
Height	4.4 mm
Length	10 mm
Rise Time	15 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	32 ns
Typical Turn-On Delay Time	14 ns
Width	9.25 mm
Part # Aliases	SP000218830 IPB80N06S208ATMA1
Unit Weight	0.139332 oz

概述

Description

The IPB80N06S2-08 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features low on-resistance (R_DS(on)), which minimizes power loss and heat generation when conducting current. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A, it is suitable for various applications, including DC-DC converters, motor drives, and power switching circuits.
The device is housed in a TO-220 package, facilitating effective heat dissipation, making it ideal for high-power applications. Its fast switching capabilities contribute to improved system efficiency. Additionally, the IPB80N06S2-08 is characterized by a gate threshold voltage (V_GS(th)) that allows for easier drive circuit design, making integration into existing circuits straightforward.
Overall, the IPB80N06S2-08 offers a reliable solution for engineers looking for efficient power handling in modern electronic systems.

Features

The IPB80N06S2-08 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: It can handle a continuous current of up to 80A, making it suitable for demanding applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.0082 ohms, which minimizes power loss and heat generation during operation.
4. Fast Switching: The device supports high-speed switching, ideal for applications such as DC-DC converters and motor drivers.
5. Thermal Performance: With a package that supports efficient heat dissipation, it maintains performance under various thermal conditions.
6. Gate Threshold Voltage: Its threshold voltage (V_GS(th)) is designed for compatibility with standard gate drive circuits.
Overall, the IPB80N06S2-08 is suitable for applications requiring high power efficiency and reliability, such as automotive, industrial, and consumer electronics.

Package

The IPB80N06S2-08 is typically offered in a TO-220 package, which is a standard type for power MOSFETs, providing robust thermal performance and electrical characteristics suitable for various applications.

Pinout

The IPB80N06S2-08 is an N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows the MOSFET to conduct.
2. Drain (D): This is the output pin where the load is connected. The current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the supply. It serves as the reference for the Gate voltage.
This MOSFET is designed for high-speed switching applications and has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A.

Manufacturer

The IPB80N06S2-08 is manufactured by Infineon Technologies AG, a leading global semiconductor company based in Germany. Infineon specializes in developing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on various industries such as automotive, industrial, and consumer electronics, providing innovative technologies that enhance energy efficiency, connectivity, and security. Infineon's products are widely recognized for their reliability and performance, making them integral to modern electronic systems.

Application

The IPB80N06S2-08 is a N-channel MOSFET used in various applications, including power management, motor control, and switching converters. It is suitable for use in DC-DC converters, power supplies, and other high-efficiency power applications. Additionally, it can be found in automotive electronics, industrial equipment, and renewable energy systems, where efficient power handling and thermal performance are essential.

Equivalent

The IPB80N06S2-08 is an N-channel MOSFET. Equivalent products include the IRF3205, STP80NF06, and PSMN2R8-80BS. Always verify specifications such as voltage, current rating, package type, and RDS(on) to ensure compatibility for your specific application.