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IPB65R310CFD
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規格
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 11.4 A |
| Rds On - Drain-Source Resistance | 280 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 41 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104.2 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 7 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 7.5 ns |
| Series | CoolMOS CFD2 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 11 ns |
| Width | 9.25 mm |
| Part # Aliases | IPB65R310CFDATMA1 SP000745032 IPB65R310CFDATMA1 |
| Unit Weight | 0.139332 oz |
概述
Description
The IPB65R310CFD is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)) of 310 mΩ, which enables efficient conduction and reduces heat generation during operation. This component is rated for a maximum drain-source voltage (V_DS) of 65 volts and can handle high currents, making it suitable for use in various applications including DC-DC converters, motor drives, and power supplies.
The device is packaged in a compact TO-220 form factor, facilitating easy heat dissipation and integration into circuits. Its fast switching capabilities contribute to improved efficiency in high-frequency applications. Additionally, the IPB65R310CFD includes a built-in gate protection mechanism, enhancing its reliability in demanding environments.
Engineered for robustness, this MOSFET is ideal for both industrial and consumer electronics, where efficiency and reliability are crucial. Overall, the IPB65R310CFD is a versatile component for designs requiring efficient power management and thermal performance.
The device is packaged in a compact TO-220 form factor, facilitating easy heat dissipation and integration into circuits. Its fast switching capabilities contribute to improved efficiency in high-frequency applications. Additionally, the IPB65R310CFD includes a built-in gate protection mechanism, enhancing its reliability in demanding environments.
Engineered for robustness, this MOSFET is ideal for both industrial and consumer electronics, where efficiency and reliability are crucial. Overall, the IPB65R310CFD is a versatile component for designs requiring efficient power management and thermal performance.
Features
The IPB65R310CFD is a high-performance N-channel MOSFET designed for various applications including power management and DC-DC converters. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, enabling it to handle high voltage applications.
2. On-Resistance: The on-resistance (R_DS(on)) is low at 0.310 ohms, which enhances efficiency and reduces power losses during operation.
3. Current Rating: It can handle continuous drain current (I_D) up to 38A, making it suitable for demanding applications.
4. Fast Switching: The device offers fast switching capabilities, which contribute to improved performance in high-frequency operations.
5. Thermal Management: It features a TO-220 package, allowing for effective heat dissipation and thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is specified between 2-4V, allowing for compatibility with various control signals.
These features make the IPB65R310CFD ideal for applications in automotive, industrial, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, enabling it to handle high voltage applications.
2. On-Resistance: The on-resistance (R_DS(on)) is low at 0.310 ohms, which enhances efficiency and reduces power losses during operation.
3. Current Rating: It can handle continuous drain current (I_D) up to 38A, making it suitable for demanding applications.
4. Fast Switching: The device offers fast switching capabilities, which contribute to improved performance in high-frequency operations.
5. Thermal Management: It features a TO-220 package, allowing for effective heat dissipation and thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is specified between 2-4V, allowing for compatibility with various control signals.
These features make the IPB65R310CFD ideal for applications in automotive, industrial, and renewable energy systems.
Package
The IPB65R310CFD is packaged in a DPAK (TO-252) format. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on PCBs.
Pinout
The IPB65R310CFD is a N-channel MOSFET from Infineon Technologies, specifically designed for applications in power switching. It features a pin count of 5, arranged in a TO-220 package. The pins are typically designated as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, motor drivers, and other high-efficiency power applications. It supports high voltage and current ratings, enabling its use in various demanding environments.
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, motor drivers, and other high-efficiency power applications. It supports high voltage and current ratings, enabling its use in various demanding environments.
Manufacturer
The IPB65R310CFD is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon focuses on developing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company specializes in power management, automotive electronics, and security technologies, providing products that enhance energy efficiency, connectivity, and safety. Infineon is known for its commitment to sustainability and has a significant presence in the global semiconductor market, catering to a diverse range of industries.
Application
The IPB65R310CFD is a N-channel MOSFET primarily used in high-efficiency power applications. Key application areas include switch-mode power supplies (SMPS), DC-DC converters, motor drives, and battery management systems. Its design supports high voltage and current handling, making it suitable for industrial automation, renewable energy systems, and electric vehicles.
Equivalent
The IPB65R310CFD is an N-channel MOSFET from Infineon with a 310A current rating and 65V voltage rating. Equivalent products include the STP65NF75 from STMicroelectronics, the IRF3205 from Infineon, and the BSC065N65NS3 from Infineon. Ensure to verify specifications like Rds(on), package type, and thermal characteristics for precise application needs.
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