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IPB65R110CFDA
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- 製造商。 部分 #IPB65R110CFDA
- 包 D2PAK-3 (TO-263-3)
- 資料表 IPB65R110CFDA DataSheet
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規格
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS CFDA |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Part # Aliases | IPB65R11CFDAXT SP000896402 IPB65R110CFDAATMA1 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 4 g |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 31.2 A |
| Rds On - Drain-Source Resistance | 99 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 118 nC |
| Pd - Power Dissipation | 277.8 W |
| Channel Mode | Enhancement |
| Fall Time | 6 ns |
| Rise Time | 11 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 68 ns |
| Typical Turn-On Delay Time | 16 ns |
| Qualification | AEC-Q100 |
| REACH - SVHC | Details |
| Package/Case | D2PAK-3 (TO-263-3) |
概述
Description
The IPB65R110CFDA is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency applications, particularly in power electronics such as DC-DC converters, motor drives, and power management systems.
Key specifications include a maximum drain-source voltage (V_DS) of 65V, a continuous drain current (I_D) of 110A, and a low on-resistance (R_DS(on)), which enhances energy efficiency by minimizing power loss during operation. The device features a fast switching speed, making it suitable for high-frequency applications.
Its package typically comes in a TO-220 or similar form factor, allowing for effective heat dissipation. The IPB65R110CFDA is ideal for applications requiring robust performance and thermal management, making it a popular choice among engineers in industrial and automotive sectors.
For specific applications or design considerations, consulting the manufacturer's datasheet is recommended, as it provides detailed electrical characteristics and thermal information.
Key specifications include a maximum drain-source voltage (V_DS) of 65V, a continuous drain current (I_D) of 110A, and a low on-resistance (R_DS(on)), which enhances energy efficiency by minimizing power loss during operation. The device features a fast switching speed, making it suitable for high-frequency applications.
Its package typically comes in a TO-220 or similar form factor, allowing for effective heat dissipation. The IPB65R110CFDA is ideal for applications requiring robust performance and thermal management, making it a popular choice among engineers in industrial and automotive sectors.
For specific applications or design considerations, consulting the manufacturer's datasheet is recommended, as it provides detailed electrical characteristics and thermal information.
Features
The IPB65R110CFDA is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 65V, making it suitable for various power management applications.
2. RDS(on): The on-resistance is low at 110 mΩ (maximum), enabling efficient conduction and minimizing power loss during operation.
3. High Current Handling: It can handle continuous drain currents up to 110A, suitable for high-load applications.
4. Fast Switching: The device is optimized for fast switching, which is beneficial in applications like power supplies and motor drivers.
5. Thermal Performance: It has a high thermal conductivity, allowing for better heat dissipation and reliability under stress.
6. Package: It comes in a TO-220 package, facilitating easy mounting and heat management.
These features make the IPB65R110CFDA ideal for use in DC-DC converters, inverters, and other power electronic circuits.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 65V, making it suitable for various power management applications.
2. RDS(on): The on-resistance is low at 110 mΩ (maximum), enabling efficient conduction and minimizing power loss during operation.
3. High Current Handling: It can handle continuous drain currents up to 110A, suitable for high-load applications.
4. Fast Switching: The device is optimized for fast switching, which is beneficial in applications like power supplies and motor drivers.
5. Thermal Performance: It has a high thermal conductivity, allowing for better heat dissipation and reliability under stress.
6. Package: It comes in a TO-220 package, facilitating easy mounting and heat management.
These features make the IPB65R110CFDA ideal for use in DC-DC converters, inverters, and other power electronic circuits.
Package
The IPB65R110CFDA is typically packaged in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power transistors and MOSFETs in various applications.
Pinout
The IPB65R110CFDA is an N-channel MOSFET manufactured by Infineon Technologies. It comes in a TO-247 package, which typically features three pins.
Pin Count and Functions:
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied at this pin turns the device on or off.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to ground or the lower potential point in the circuit. It serves as the return path for the current flowing through the device.
The IPB65R110CFDA is designed for high-efficiency applications, with a maximum voltage rating of 650V and a continuous drain current of 110A. Its low on-resistance makes it suitable for power conversion applications.
Pin Count and Functions:
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied at this pin turns the device on or off.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - This pin is connected to ground or the lower potential point in the circuit. It serves as the return path for the current flowing through the device.
The IPB65R110CFDA is designed for high-efficiency applications, with a maximum voltage rating of 650V and a continuous drain current of 110A. Its low on-resistance makes it suitable for power conversion applications.
Manufacturer
The IPB65R110CFDA is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and performance in their solutions. Infineon is recognized for its innovations in power management and automotive solutions, contributing significantly to advancements in electric mobility and renewable energy technologies.
Application
The IPB65R110CFDA is an N-channel MOSFET used in various applications, including power supplies, DC-DC converters, motor drives, and automotive systems. It is particularly suited for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Additionally, it can be employed in renewable energy systems, such as solar inverters, as well as in consumer electronics for power management.
Equivalent
The IPB65R110CFDA is an N-channel MOSFET from Infineon. Equivalent products include the IRFB4110 (International Rectifier), FDS6910 (Fairchild Semiconductor), and STP75NF75 (STMicroelectronics). When selecting an equivalent, ensure similar voltage ratings, RDS(on), and current handling characteristics for compatibility in your application. Always check datasheets for precise specifications.
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