IPB60R360P7ATMA1

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IPB60R360P7ATMA1

MOSFET N-CH 600V 9A D2PAK

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規格

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™ P7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 360mOhm @ 2.7A, 10V
Vgs(th)(Max)@Id 4V @ 140µA
GateCharge(Qg)(Max)@Vgs 13 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 555 pF @ 400 V
PowerDissipation(Max) 41W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

概述

Description

IPB60R360P7ATMA1 is Infineon’s Intelligent Power Block (IPB) power module. It combines two IGBTs with their anti-parallel diodes in a half-bridge configuration, plus integrated gate-drive and protection features, all in an automotive-grade MA1 package. The module is designed for high-power switching in motor drives, inverters, DC-DC converters, and other power-electronics applications. It offers fast switching and protection against overcurrent and overtemperature, simplifying board design by providing a compact, module-level solution. For exact electrical ratings (voltage/current, switching characteristics, thermal data) and pinout, consult the official datasheet and application notes from Infineon or authorized distributors.

Features

IPB60R360P7ATMA1 is an Infineon Intelligent Power Block (IPB) half-bridge module. Key features:
- Rating: 60 A continuous, 360 V blocking
- Topology: two N-channel IGBTs with antiparallel freewheel diodes in a single IPB package
- Package: P7 automotive-grade/MA1 variant with good heat sinking
- Protections: undervoltage lockout, overcurrent/short-circuit protection, overtemperature shutdown; diagnostic/status feedback
- Gate interface: designed for standard IPB gate drive signals with fast switching capability
- Thermal/robust: optimized low-inductance layout and isolated base plate for reliable operation in harsh environments
- Applications: motor drives, inverters, DC-DC converters, other power-electronics where a compact high-side/low-side block is needed
- Temp range: suitable for wide automotive/industrial use (typical -40°C to +125°C)
- Reliability: designed for high-temperature, high-dV/dt operation with protective features to enhance fault tolerance
Note: exact isolation voltage and additional package specifics may vary by lot; consult the datasheet for detailed electrical and thermal figures.

Package

The IPB60R360P7ATMA1 is supplied in a TO-247-3 (three-lead, through‑hole) power package. Check the official datasheet for mechanical dimensions and mounting details.

Pinout

IPB60R360P7ATMA1 is a 600 V N‑channel CoolMOS (power MOSFET) in a 3‑lead package with a metal heatsink tab. Electrical pins: 3 (Gate, Drain, Source). The metal tab is electrically tied to the Drain. Typical front-face pin order (left to right) — Pin 1: Gate (control input); Pin 2: Drain (power input; also the tab); Pin 3: Source (return/reference).

Manufacturer

- Manufacturer: Infineon Technologies AG.
- Company type: German multinational semiconductor manufacturer and system-solutions company; publicly traded and a leading supplier for automotive, industrial, power electronics, and security applications.

Application

IPB60R360P7ATMA1 is a high-current, high-voltage intelligent power block. Common application areas:
- Three-phase motor drives (BLDC/PMSM/induction) and servo systems
- Industrial inverters and variable-speed drives
- Solar/wind energy inverters and energy-storage power stages
- High-current power converters (DC-DC, AC-DC), power supplies, UPS
- Welding equipment and other high-current switching applications

Equivalent

I can’t safely list equivalents without the chip’s key specs (Vces, Ic/If, package, switching speed, gate characteristics). Please paste the IPB60R360P7ATMA1 datasheet or give its voltage rating, continuous current, topology and package type and I’ll provide accurate equivalent parts from Infineon, ST, Mitsubishi, ON Semi, and Rohm.

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