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IPB60R165CP
MOSFETs N-Ch 650V 21A D2PAK-2 CoolMOS CP
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| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概述
Description
The IPB60R165CP is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 165A, making it suitable for various switching applications, including converters, inverters, and motor drives.
This MOSFET is characterized by low on-resistance (R_DS(on)), typically around 0.165 ohms, which contributes to improved efficiency and reduced power loss in circuits. Its fast switching capabilities enable higher frequency operation, making it ideal for applications requiring rapid switching.
The IPB60R165CP is housed in a TO-220 package, allowing for effective thermal management and easy integration into designs. It also features a gate threshold voltage (V_GS(th)) that ensures reliable operation across different conditions.
Overall, the IPB60R165CP is a robust choice for engineers looking for reliable and efficient power management solutions in high voltage and high current environments.
This MOSFET is characterized by low on-resistance (R_DS(on)), typically around 0.165 ohms, which contributes to improved efficiency and reduced power loss in circuits. Its fast switching capabilities enable higher frequency operation, making it ideal for applications requiring rapid switching.
The IPB60R165CP is housed in a TO-220 package, allowing for effective thermal management and easy integration into designs. It also features a gate threshold voltage (V_GS(th)) that ensures reliable operation across different conditions.
Overall, the IPB60R165CP is a robust choice for engineers looking for reliable and efficient power management solutions in high voltage and high current environments.
Features
The IPB60R165CP is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is rated at 165A, providing robust performance in power management.
3. Low On-Resistance: With a typical Rds(on) of around 0.165 Ohms, it ensures minimal power loss during operation.
4. Fast Switching Speed: This MOSFET supports high-frequency applications, which is beneficial for switching power supplies and converters.
5. Thermal Performance: It features a high thermal resistance capability, allowing for efficient heat dissipation.
6. Package Type: Available in a TO-220 package, it facilitates easy mounting and good thermal conductivity.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for motor drives, power supplies, and inverter circuits.
Overall, the IPB60R165CP is ideal for demanding electronic applications requiring high voltage and current handling.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is rated at 165A, providing robust performance in power management.
3. Low On-Resistance: With a typical Rds(on) of around 0.165 Ohms, it ensures minimal power loss during operation.
4. Fast Switching Speed: This MOSFET supports high-frequency applications, which is beneficial for switching power supplies and converters.
5. Thermal Performance: It features a high thermal resistance capability, allowing for efficient heat dissipation.
6. Package Type: Available in a TO-220 package, it facilitates easy mounting and good thermal conductivity.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for motor drives, power supplies, and inverter circuits.
Overall, the IPB60R165CP is ideal for demanding electronic applications requiring high voltage and current handling.
Package
The IPB60R165CP is packaged in a TO-247 form factor. This package type is designed for high-power applications, offering excellent thermal performance and reliability.
Pinout
The IPB60R165CP is an N-channel MOSFET designed for high-performance applications. It features a total pin count of 4.
The pins and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the output terminal where the current exits the MOSFET.
4. Tab (T) - The tab is typically connected to the source and can also be used for heat dissipation.
The IPB60R165CP is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 165A, making it suitable for various applications, including power supplies and motor drivers.
The pins and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the output terminal where the current exits the MOSFET.
4. Tab (T) - The tab is typically connected to the source and can also be used for heat dissipation.
The IPB60R165CP is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 165A, making it suitable for various applications, including power supplies and motor drivers.
Manufacturer
The IPB60R165CP is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various markets such as automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation. The IPB60R165CP is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used primarily in power management applications.
Application
The IPB60R165CP is an insulation-gate bipolar transistor (IGBT) primarily used in high-power applications such as motor drives, induction heating, renewable energy systems (like solar inverters), and industrial power supplies. Its high voltage and current ratings make it suitable for applications requiring efficient switching and thermal management, improving overall energy efficiency in electrical systems.
Equivalent
The IPB60R165CP is an N-channel MOSFET with a voltage rating of 600V and a current rating of 165A. Equivalent products include:
1. STP60NF165
2. FGH60N165
3. IRF840
4. IRF840PBF
Always verify specifications such as RDS(on), gate charge, and thermal characteristics before substitution.
1. STP60NF165
2. FGH60N165
3. IRF840
4. IRF840PBF
Always verify specifications such as RDS(on), gate charge, and thermal characteristics before substitution.
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