圖片僅供參考
IPB160N04S2-03
MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS
- 製造商
- 製造商。 部分 #IPB160N04S2-03
- 包
- 資料表 IPB160N04S2-03 DataSheet
- 有現貨的21563
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概述
Description
The IPB160N04S2-03 is a high-performance N-channel MOSFET designed for applications requiring efficient power management. With a maximum continuous drain current of 160A and a low on-resistance (R_DS(on)) of 4 mΩ, it is suitable for high-efficiency switching applications. The device operates at a wide voltage range, with a maximum drain-source voltage (V_DS) of 40V, making it ideal for various power supply and conversion tasks, including DC-DC converters, motor drives, and power amplifiers.
This MOSFET features a fast switching speed, ensuring minimal energy loss during operation, which is critical for high-frequency applications. The package typically used is a TO-220 or DPAK format, allowing for effective heat dissipation. Designed for robust performance, it is often utilized in consumer electronics, industrial equipment, and automotive applications. Overall, the IPB160N04S2-03 combines high current handling, low losses, and reliability, making it a popular choice in modern electronic designs.
This MOSFET features a fast switching speed, ensuring minimal energy loss during operation, which is critical for high-frequency applications. The package typically used is a TO-220 or DPAK format, allowing for effective heat dissipation. Designed for robust performance, it is often utilized in consumer electronics, industrial equipment, and automotive applications. Overall, the IPB160N04S2-03 combines high current handling, low losses, and reliability, making it a popular choice in modern electronic designs.
Features
The IPB160N04S2-03 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 160A, allowing it to support high-power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 2.5 mΩ at V_GS = 10V, which helps minimize power losses during operation.
4. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It features a robust thermal performance with a low thermal resistance, ensuring reliable operation at elevated temperatures.
6. Package Type: It is typically available in a TO-220 or similar package, facilitating good heat dissipation.
Overall, the IPB160N04S2-03 is well-suited for applications such as DC-DC converters, motor drives, and power inverters.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 160A, allowing it to support high-power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 2.5 mΩ at V_GS = 10V, which helps minimize power losses during operation.
4. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It features a robust thermal performance with a low thermal resistance, ensuring reliable operation at elevated temperatures.
6. Package Type: It is typically available in a TO-220 or similar package, facilitating good heat dissipation.
Overall, the IPB160N04S2-03 is well-suited for applications such as DC-DC converters, motor drives, and power inverters.
Package
The IPB160N04S2-03 is typically packaged in a TO-220 package type. This package provides good thermal performance and is commonly used for high-power MOSFET applications.
Pinout
The IPB160N04S2-03 is an N-channel MOSFET from Infineon Technologies. It features a total of 4 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the operation of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin is where the load is connected. Current flows from the Drain to the Source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply in typical applications. It serves as the reference point for the gate voltage.
The device is designed for high-efficiency applications, with low on-resistance and fast switching capabilities, making it suitable for power management and various switching applications.
1. Gate (G) - This pin controls the operation of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin is where the load is connected. Current flows from the Drain to the Source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply in typical applications. It serves as the reference point for the gate voltage.
The device is designed for high-efficiency applications, with low on-resistance and fast switching capabilities, making it suitable for power management and various switching applications.
Manufacturer
The IPB160N04S2-03 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon's technologies are widely used in automotive, industrial, and consumer applications, focusing on energy efficiency, mobility, and security. The IPB160N04S2-03 is a power MOSFET primarily utilized in power management applications, demonstrating Infineon's commitment to innovation and high-performance solutions in the semiconductor industry.
Application
The IPB160N04S2-03 is an N-channel MOSFET used primarily in power management applications. Its key application areas include DC-DC converters, power supplies, motor drives, and renewable energy systems such as solar inverters. It is also suitable for high-efficiency switching applications in consumer electronics and automotive systems, where effective thermal management and high-speed switching are essential.
Equivalent
The IPB160N04S2-03 is an N-channel MOSFET from Infineon. Equivalent products include the IRF160N04, STP160N04, and BSC160N04. Ensure to check parameters like Rds(on), Vds, and current ratings for compatibility with your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNQ03
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V16066M2I02
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29F040CTI-70G
Macronix