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IPB048N15N5
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- 製造商。 部分 #IPB048N15N5
- 包 D2PAK-3 (TO-263-3)
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規格
| Technology | Si |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Height | 4.4 mm |
| Length | 10 mm |
| Width | 9.25 mm |
| Unit Weight | 4 g |
| Package/Case | D2PAK-3 (TO-263-3) |
概述
Description
The IPB048N15N5 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (Rds(on)) and high current capacity, making it suitable for power management in various electronic devices, including power supplies, motor drives, and automotive applications.
Key specifications typically include a maximum drain-source voltage (Vds) of 48V, a continuous drain current (Id) rating that often exceeds 100A, and fast switching capabilities, which enhance overall efficiency and reduce heat generation.
This MOSFET is part of Infineon's product lineup and is known for its reliability and thermal performance, contributing to improved system efficiency and longevity.
In summary, the IPB048N15N5 is ideal for engineers looking to optimize power electronics designs with robust switching performance and minimal energy loss.
Key specifications typically include a maximum drain-source voltage (Vds) of 48V, a continuous drain current (Id) rating that often exceeds 100A, and fast switching capabilities, which enhance overall efficiency and reduce heat generation.
This MOSFET is part of Infineon's product lineup and is known for its reliability and thermal performance, contributing to improved system efficiency and longevity.
In summary, the IPB048N15N5 is ideal for engineers looking to optimize power electronics designs with robust switching performance and minimal energy loss.
Features
The IPB048N15N5 is a high-performance N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 48V, suitable for medium voltage applications.
2. Current Rating: Continuous drain current (ID) can reach up to 15A, making it capable of handling significant loads.
3. Low RDS(on): It offers a low on-resistance (RDS(on)) value, typically around 15 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device is optimized for fast switching speeds, beneficial for high-frequency applications.
5. Thermal Performance: With a suitable thermal resistance, it can effectively manage heat dissipation, ensuring reliability.
6. Package Type: Available in a TO-220 package, providing ease of heat sinking and mounting.
The IPB048N15N5 is ideal for applications such as DC-DC converters, motor drives, and power supplies. Its robust performance makes it a popular choice in the electronics industry.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 48V, suitable for medium voltage applications.
2. Current Rating: Continuous drain current (ID) can reach up to 15A, making it capable of handling significant loads.
3. Low RDS(on): It offers a low on-resistance (RDS(on)) value, typically around 15 mΩ, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The device is optimized for fast switching speeds, beneficial for high-frequency applications.
5. Thermal Performance: With a suitable thermal resistance, it can effectively manage heat dissipation, ensuring reliability.
6. Package Type: Available in a TO-220 package, providing ease of heat sinking and mounting.
The IPB048N15N5 is ideal for applications such as DC-DC converters, motor drives, and power supplies. Its robust performance makes it a popular choice in the electronics industry.
Package
The IPB048N15N5 is packaged in a TO-220 form factor, which is a standard type of package for power MOSFETs. This package provides good thermal performance and is suitable for various applications requiring efficient heat dissipation.
Pinout
The IPB048N15N5 is a N-channel MOSFET from Infineon Technologies, designed for high-efficiency applications. It features a total of 5 pins, which are typically configured as follows:
1. Gate (G): Controls the MOSFET's on/off state by applying voltage.
2. Drain (D): The terminal through which the load connects and where the output current flows.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pin configuration may vary slightly based on the package type, so it's important to consult the datasheet for precise details. This MOSFET is optimized for low on-resistance (R_DS(on)) and high-speed switching, making it suitable for power management, DC-DC converters, and other applications where efficiency and performance are critical.
1. Gate (G): Controls the MOSFET's on/off state by applying voltage.
2. Drain (D): The terminal through which the load connects and where the output current flows.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The specific pin configuration may vary slightly based on the package type, so it's important to consult the datasheet for precise details. This MOSFET is optimized for low on-resistance (R_DS(on)) and high-speed switching, making it suitable for power management, DC-DC converters, and other applications where efficiency and performance are critical.
Manufacturer
The IPB048N15N5 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing innovative semiconductor solutions for various applications, including automotive, industrial power control, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, and system-on-chip solutions, focusing on efficiency, performance, and reliability in energy management and automation. The firm plays a significant role in advancing technologies such as electric vehicles and renewable energy, catering to diverse markets worldwide.
Application
The IPB048N15N5 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power supply circuits. Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics applications, where it helps improve energy efficiency and thermal performance in various electronic devices.
Equivalent
The IPB048N15N5 is a N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP75NF75, and FDP7530. Always verify the specifications such as voltage, current rating, RDS(on), and package type to ensure compatibility with your design requirements.
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