圖片僅供參考
IPB031N08N5
MOSFETs N-Ch 80V 120A D2PAK-2
- 製造商
- 製造商。 部分 #IPB031N08N5
- 包
- 資料表 IPB031N08N5 DataSheet
- 有現貨的27775
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
概述
Description
IPB031N08N5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency applications in power management and energy conversion systems. The device features a low on-resistance (RDS(on)) value, which reduces power losses and improves thermal performance, making it suitable for use in power supplies, converters, and motor drivers.
This MOSFET is rated for a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 31A. Its compact package and reliable performance make it a popular choice for applications requiring high efficiency and compact design.
The IPB031N08N5 is often used in various sectors, including automotive, industrial, and consumer electronics, where efficient power management is crucial. Its characteristics enable it to operate effectively in harsh conditions, making it a robust component for modern electronic designs.
This MOSFET is rated for a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 31A. Its compact package and reliable performance make it a popular choice for applications requiring high efficiency and compact design.
The IPB031N08N5 is often used in various sectors, including automotive, industrial, and consumer electronics, where efficient power management is crucial. Its characteristics enable it to operate effectively in harsh conditions, making it a robust component for modern electronic designs.
Features
The IPB031N08N5 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 80V, making it suitable for various power management applications.
2. Current Rating: It can handle continuous drain current (Id) up to 31A, providing robust performance in demanding environments.
3. RDS(on): The on-resistance is exceptionally low (around 3.1 mΩ), which minimizes power loss during operation and enhances efficiency.
4. Package Type: Typically available in a TO-220 package, it allows for efficient heat dissipation.
5. Fast Switching: Designed for rapid switching applications, it enables efficient operation in high-frequency circuits.
6. Thermal Resistance: The low thermal resistance ensures effective thermal management, enabling the device to operate at higher power levels without overheating.
Overall, the IPB031N08N5 is ideal for power supply converters, motor drivers, and other high-performance electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 80V, making it suitable for various power management applications.
2. Current Rating: It can handle continuous drain current (Id) up to 31A, providing robust performance in demanding environments.
3. RDS(on): The on-resistance is exceptionally low (around 3.1 mΩ), which minimizes power loss during operation and enhances efficiency.
4. Package Type: Typically available in a TO-220 package, it allows for efficient heat dissipation.
5. Fast Switching: Designed for rapid switching applications, it enables efficient operation in high-frequency circuits.
6. Thermal Resistance: The low thermal resistance ensures effective thermal management, enabling the device to operate at higher power levels without overheating.
Overall, the IPB031N08N5 is ideal for power supply converters, motor drivers, and other high-performance electronic applications.
Package
The IPB031N08N5 is typically offered in a TO-220 package type, which is a standard package for power semiconductor devices, providing efficient heat dissipation and ease of mounting on heat sinks.
Pinout
The IPB031N08N5 is an N-channel MOSFET, part of the Infineon CoolMOS series. It typically comes in a TO-220 package with a pin count of 3. The functions of each pin are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows. It receives the current when the MOSFET is turned on.
3. Source (S): This is the terminal that connects to ground or the lower potential in the circuit, allowing current to flow to the load when the MOSFET is activated.
The IPB031N08N5 is designed for efficient switching applications and can handle high voltages and currents, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows. It receives the current when the MOSFET is turned on.
3. Source (S): This is the terminal that connects to ground or the lower potential in the circuit, allowing current to flow to the load when the MOSFET is activated.
The IPB031N08N5 is designed for efficient switching applications and can handle high voltages and currents, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The IPB031N08N5 is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, chip card and security, and the Internet of Things (IoT). The company is known for its expertise in power semiconductors, microcontrollers, and sensor technologies. Infineon plays a significant role in enabling energy efficiency and advanced technologies across various industries.
Application
The IPB031N08N5 is an N-channel MOSFET primarily used in power management applications. Its key application areas include power converters, motor drives, switch-mode power supplies (SMPS), and automotive systems. It’s suitable for high-efficiency switching, enabling efficient energy transfer and low power loss in devices. Additionally, it's utilized in industrial automation and renewable energy systems, such as solar inverters.
Equivalent
The IPB031N08N5 is an N-channel MOSFET from Infineon, typically used in power applications. Equivalent products include the IRF3205 (International Rectifier), FDS6910 (Fairchild), and STP75NF75 (STMicroelectronics). Always verify specifications such as voltage, current ratings, and R_DS(on) when selecting alternatives.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25U25645GXDI00
Macronix
-
MX25L12835FZ2I-10..
Macronix