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IPB027N10N3G

Name: IPB027N10N3G
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 120A D2PAK

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概述

Description

The IPB027N10N3G is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Infineon Technologies. It is designed for high-efficiency applications, particularly in power electronics, due to its low on-resistance (RDS(on)) and fast switching capabilities. The device is rated for a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 27A, making it suitable for various applications such as DC-DC converters, motor drives, and power management systems.
Key features include its high thermal performance and efficiency, which are crucial for reducing power loss and improving overall system reliability. The package type is typically a TO-220, allowing for effective heat dissipation. The MOSFET's construction incorporates advanced technology for improved performance and reliability in demanding environments. Overall, the IPB027N10N3G is a versatile component for engineers looking to enhance the performance of their electronic designs.

Features

The IPB027N10N3G is an N-channel MOSFET from Infineon's CoolMOS™ series, designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 100V.
2. Continuous Drain Current: It can handle up to 27A of continuous current.
3. Low R_DS(on): Offers low on-resistance, typically around 10 mΩ, minimizing conduction losses.
4. Fast Switching: Designed for high-speed operation, suitable for applications like switching power supplies and converters.
5. Thermal Performance: Features robust thermal characteristics, enabling efficient heat dissipation.
These attributes make the IPB027N10N3G ideal for applications in renewable energy, automotive, and industrial sectors where efficient power conversion is essential.

Package

The IPB027N10N3G is packaged in a TO-220 form factor, which is a widely used package type for power MOSFETs. This package allows for effective heat dissipation and is suitable for various applications in power electronics.

Pinout

The IPB027N10N3G is an N-channel MOSFET from Infineon Technologies. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, applying a voltage to turn it on or off.
2. Drain (D): This pin is where the load is connected and through which the current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, providing a return path for the current.
The device is designed for high efficiency and low on-resistance, making it suitable for various applications, including power management and switching.

Manufacturer

The IPB027N10N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company plays a significant role in various industries, such as automotive, industrial, and consumer electronics, focusing on solutions that enhance energy efficiency, connectivity, and security. Infineon is recognized for its innovative technologies in power management and is a leader in the development of components used in energy-efficient applications.

Application

The IPB027N10N3G is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. DC-DC converters
2. Power supplies
3. Motor drives
4. Battery management systems
5. LED drivers
6. Telecom equipment
7. Industrial automation systems
This MOSFET is valued for its efficiency and high switching capabilities.

Equivalent

The IPB027N10N3G is an N-channel MOSFET from Infineon. Equivalent products include the AON7410, STP10NM60, and FQP30N10L. For precise applications, check specifications like V_DS, I_D, and R_DS(on) to ensure compatibility. Always consult manufacturer datasheets for detailed comparisons.