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IPA60R380E6
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- 資料表 IPA60R380E6 DataSheet
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規格
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 500 |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10.6 A |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 32 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 31 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 8 nS |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 9 nS |
| Series | CoolMOS E6 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 56 nS |
| Width | 4.85 mm |
| Part # Aliases | SP000795300 IPA6R38E6XK IPA60R380E6XKSA1 |
| Unit Weight | 0.068784 oz |
概述
Description
The IPA60R380E6 is an insulated gate bipolar transistor (IGBT) produced by Infineon Technologies. It is designed for high-efficiency power conversion applications, such as inverters, motor drives, and industrial equipment. This IGBT features a voltage rating of 600 volts and a current rating of 380 amperes, making it suitable for demanding environments.
Key characteristics include a low conduction loss, fast switching speeds, and robustness, allowing it to handle high temperatures and reduce energy losses during operation. The IGBT is typically used in combination with a diode for enhanced performance in power electronics applications.
The "E6" designation indicates it is part of a specific family of products that meet stringent quality and reliability standards. Overall, the IPA60R380E6 is an effective choice for engineers looking to improve power efficiency and performance in their designs.
Key characteristics include a low conduction loss, fast switching speeds, and robustness, allowing it to handle high temperatures and reduce energy losses during operation. The IGBT is typically used in combination with a diode for enhanced performance in power electronics applications.
The "E6" designation indicates it is part of a specific family of products that meet stringent quality and reliability standards. Overall, the IPA60R380E6 is an effective choice for engineers looking to improve power efficiency and performance in their designs.
Features
The IPA60R380E6 is an N-channel MOSFET from Infineon, designed for high-performance applications. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (Id) of up to 60A, allowing for significant load handling.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of approximately 0.38 ohms, which contributes to improved efficiency and reduced power loss during operation.
4. Fast Switching: The MOSFET is designed for high-speed switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: It features a robust thermal management capability, helping to maintain performance under high-temperature conditions.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
Overall, the IPA60R380E6 is well-suited for industrial and automotive applications, including power management and motor control systems.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (Id) of up to 60A, allowing for significant load handling.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of approximately 0.38 ohms, which contributes to improved efficiency and reduced power loss during operation.
4. Fast Switching: The MOSFET is designed for high-speed switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: It features a robust thermal management capability, helping to maintain performance under high-temperature conditions.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
Overall, the IPA60R380E6 is well-suited for industrial and automotive applications, including power management and motor control systems.
Package
The IPA60R380E6 is available in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and ease of mounting on heatsinks.
Pinout
The IPA60R380E6 is a 600V, 38A N-channel Infineon IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency applications. It typically comes in a TO-247 package, which has three main pins:
1. Collector (C) - This is the main terminal through which the high voltage and current flow. It connects to the load in the circuit.
2. Gate (G) - This terminal is used to control the switching of the IGBT. Applying a voltage here turns the device on or off.
3. Emitter (E) - This pin is connected to the ground or the negative side of the power supply, completing the circuit for current flow.
The specific pin configuration may vary slightly depending on the manufacturer and packaging, so it's essential to consult the datasheet for detailed information.
1. Collector (C) - This is the main terminal through which the high voltage and current flow. It connects to the load in the circuit.
2. Gate (G) - This terminal is used to control the switching of the IGBT. Applying a voltage here turns the device on or off.
3. Emitter (E) - This pin is connected to the ground or the negative side of the power supply, completing the circuit for current flow.
The specific pin configuration may vary slightly depending on the manufacturer and packaging, so it's essential to consult the datasheet for detailed information.
Manufacturer
The IPA60R380E6 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Infineon is recognized for its focus on innovation and energy efficiency, contributing to advancements in power management and smart technologies.
Application
The IPA60R380E6 is a high-performance IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, inverters, renewable energy systems (like solar and wind), and industrial automation. Its high voltage and current ratings make it suitable for power supply systems, welding equipment, and electric vehicles. Additionally, it is utilized in traction systems and other high-efficiency power conversion applications.
Equivalent
The IPA60R380E6 is a 600V, 380A N-channel IGBT. Equivalent or alternative products include the Infineon FGH40N60SFD, ON Semiconductor MBRF1045, and the STMicroelectronics STGWA30H60. When selecting equivalents, consider voltage, current ratings, switching speeds, and thermal characteristics to ensure compatibility for your application. Always check the specific datasheet for detailed comparisons.
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