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IPA60R1K0CE
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- 製造商。 部分 #IPA60R1K0CE
- 包 TO-220FP-3
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規格
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Width | 4.85 mm |
| Unit Weight | 2 g |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Package/Case | TO-220FP-3 |
概述
Description
The IPA60R1K0CE is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance, making it ideal for efficient power conversion in devices like power supplies and motor drives. The device typically supports a voltage rating of 60V and a continuous drain current of up to 1A, which provides flexibility for different circuit requirements.
Key specifications often include a fast switching speed, low gate charge, and thermal performance that ensures reliability under various operating conditions. It is commonly used in applications like DC-DC converters, LED drivers, and automotive systems.
The MOSFET's small package size allows for space-saving designs, making it suitable for compact electronic devices. Overall, the IPA60R1K0CE is a reliable component for engineers looking to enhance efficiency and performance in their electronic designs.
Key specifications often include a fast switching speed, low gate charge, and thermal performance that ensures reliability under various operating conditions. It is commonly used in applications like DC-DC converters, LED drivers, and automotive systems.
The MOSFET's small package size allows for space-saving designs, making it suitable for compact electronic devices. Overall, the IPA60R1K0CE is a reliable component for engineers looking to enhance efficiency and performance in their electronic designs.
Features
The IPA60R1K0CE is an N-channel MOSFET designed for high-efficiency power conversion applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 600V, allowing it to handle high-voltage applications.
2. Current Rating: The device can support continuous drain currents of up to 1A, making it suitable for various power management tasks.
3. Low R_DS(on): The on-resistance is low, typically around 1.1 ohms, which reduces conduction losses and enhances efficiency.
4. Fast Switching Speed: It features fast switching capabilities, beneficial for high-frequency applications like SMPS (Switched Mode Power Supplies).
5. Thermal Management: Designed with good thermal performance, it can operate effectively in demanding environments.
6. Package Type: It usually comes in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
These features make the IPA60R1K0CE ideal for applications in power supplies, motor drives, and other circuits requiring efficient switching and high reliability.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 600V, allowing it to handle high-voltage applications.
2. Current Rating: The device can support continuous drain currents of up to 1A, making it suitable for various power management tasks.
3. Low R_DS(on): The on-resistance is low, typically around 1.1 ohms, which reduces conduction losses and enhances efficiency.
4. Fast Switching Speed: It features fast switching capabilities, beneficial for high-frequency applications like SMPS (Switched Mode Power Supplies).
5. Thermal Management: Designed with good thermal performance, it can operate effectively in demanding environments.
6. Package Type: It usually comes in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
These features make the IPA60R1K0CE ideal for applications in power supplies, motor drives, and other circuits requiring efficient switching and high reliability.
Package
The IPA60R1K0CE is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust electrical performance.
Pinout
The IPA60R1K0CE is an N-channel MOSFET from Infineon, part of the CoolMOS series. It has a total of 8 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching action. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is on.
3. Source (S): The source is the terminal through which the current enters the MOSFET.
The specific pin layout can be found in its datasheet, and it typically follows an industry-standard configuration. Applications include power supply circuits, converters, and other high-efficiency power management systems. The IPA60R1K0CE is known for its high voltage rating and low on-resistance, making it suitable for demanding applications.
1. Gate (G): This pin is used to control the MOSFET's switching action. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is on.
3. Source (S): The source is the terminal through which the current enters the MOSFET.
The specific pin layout can be found in its datasheet, and it typically follows an industry-standard configuration. Applications include power supply circuits, converters, and other high-efficiency power management systems. The IPA60R1K0CE is known for its high voltage rating and low on-resistance, making it suitable for demanding applications.
Manufacturer
The IPA60R1K0CE is manufactured by Infineon Technologies, a leading global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Their products are used in various applications such as automotive, industrial, and consumer electronics. Infineon is recognized for its focus on innovation and commitment to sustainability, offering solutions that enhance energy efficiency and support the growing demand for advanced technologies like electric vehicles and renewable energy.
Application
The IPA60R1K0CE is an IGBT (Insulated Gate Bipolar Transistor) suitable for high-efficiency power conversion applications. Its key application areas include motor drives, renewable energy systems (like solar inverters), switch-mode power supplies, and industrial automation. It is ideal for use in systems requiring high voltage and current handling capabilities, providing efficiency and performance in energy management solutions.
Equivalent
The IPA60R1K0CE is a 600V, 1.0Ω IGBT. Equivalent products include:
1. FGA60N60 (onsemi)
2. IRG4PH50K (Infineon)
3. MG600Q2YS32 (Mitsubishi)
4. IXGH40N60C3 (IXYS)
Always verify specifications to ensure compatibility for your specific application.
1. FGA60N60 (onsemi)
2. IRG4PH50K (Infineon)
3. MG600Q2YS32 (Mitsubishi)
4. IXGH40N60C3 (IXYS)
Always verify specifications to ensure compatibility for your specific application.
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