圖片僅供參考
IPA029N06NXKSA1
MOSFET N-CH 60V 84A TO220-FP
- 製造商
- 製造商。 部分 #IPA029N06NXKSA1
- 包 PG-TO220-3
- 資料表 IPA029N06NXKSA1 DataSheet
- 有現貨的6847
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tube |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 84A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2.9mOhm @ 84A, 10V |
| Vgs(th)(Max)@Id | 3.3V @ 75µA |
| GateCharge(Qg)(Max)@Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5125 pF @ 30 V |
| PowerDissipation(Max) | 38W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | PG-TO220-FP |
概述
Description
IPA029N06NXKSA1 is a type of integrated circuit, specifically a power management IC (PMIC) or voltage regulator, designed for various applications in electronic devices. This component typically features high efficiency and low power consumption, making it suitable for battery-operated devices. It may include functions such as step-down (buck) regulation, adjustable output voltage, and fault protection mechanisms.
Key specifications often include input voltage range, output current capability, and thermal performance. Such ICs are widely used in consumer electronics, automotive systems, and industrial applications where efficient power management is crucial. For detailed specifications and application guidelines, consulting the manufacturer's datasheet is recommended.
Key specifications often include input voltage range, output current capability, and thermal performance. Such ICs are widely used in consumer electronics, automotive systems, and industrial applications where efficient power management is crucial. For detailed specifications and application guidelines, consulting the manufacturer's datasheet is recommended.
Features
The IPA029N06NXKSA1 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 29A, ensuring it can manage significant power loads.
3. Low On-Resistance: It has a low R_DS(on) value, which reduces power losses during operation and enhances efficiency.
4. Fast Switching Speed: The MOSFET features rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has excellent thermal characteristics, allowing for higher performance in thermal management.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
Overall, the IPA029N06NXKSA1 is suitable for power management, switching, and amplification in various electronic circuits.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 29A, ensuring it can manage significant power loads.
3. Low On-Resistance: It has a low R_DS(on) value, which reduces power losses during operation and enhances efficiency.
4. Fast Switching Speed: The MOSFET features rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has excellent thermal characteristics, allowing for higher performance in thermal management.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
Overall, the IPA029N06NXKSA1 is suitable for power management, switching, and amplification in various electronic circuits.
Package
The IPA029N06NXKSA1 is packaged in a TO-220 format. This package type is commonly used for power devices, providing efficient heat dissipation and easy mounting on heatsinks.
Pinout
The IPA029N06NXKSA1 is a N-channel MOSFET with a pin count of 6. The functions of the pins are as follows:
1. Gate (G): Controls the MOSFET operation (turning it on/off).
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground in a typical application, serving as the return path for the current.
4. Body Diode: Internal structure that allows current to flow from Drain to Source when the MOSFET is off, providing protection against back EMF in inductive loads.
This device is used in various applications including power management, switching regulators, and motor drives due to its high efficiency and low on-resistance characteristics.
1. Gate (G): Controls the MOSFET operation (turning it on/off).
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground in a typical application, serving as the return path for the current.
4. Body Diode: Internal structure that allows current to flow from Drain to Source when the MOSFET is off, providing protection against back EMF in inductive loads.
This device is used in various applications including power management, switching regulators, and motor drives due to its high efficiency and low on-resistance characteristics.
Manufacturer
The IPA029N06NXKSA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon serves various sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security applications. With a strong emphasis on innovation, Infineon plays a significant role in advancing technologies for a more connected and sustainable world.
Application
The IPA029N06NXKSA1 is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, switching power supplies, motor drivers, and general-purpose switching. It is suitable for high-efficiency power systems due to its low on-resistance and fast switching capabilities, making it ideal for consumer electronics, automotive systems, and industrial automation.
Equivalent
The IPA029N06NXKSA1 is a N-channel MOSFET. Equivalent products include the IRF2906, STP29NF06L, and BSS123. However, check specifications like V_DS, I_D, R_DS(on), and package type to ensure compatibility for your specific application. Always verify with the latest manufacturer datasheets for the most accurate information.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25R8035FM1IL0
Macronix
-
MX25V1635FZNI
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V2033FM1I
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29F040CQI-70G
Macronix
-
MX25L25645GXDI-08..
Macronix
-
MX29F040CTI-70G
Macronix
-
MX29F800CBTI-70G
Macronix