HUF75339P3

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HUF75339P3

MOSFET N-CH 55V 75A TO220-3

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規格

Series UltraFET™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

概述

Description

HUF75339P3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. It is designed for use in various power management applications, such as switching power supplies, motor control, and DC-DC converters. This MOSFET features low on-resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation.
Key specifications typically include a voltage rating of around 40V and a continuous drain current up to approximately 60A, depending on the thermal management and operating conditions. The HUF75339P3 is packaged in a TO-220 format, allowing for effective heat dissipation. Its high-speed switching capabilities make it suitable for applications requiring rapid on/off cycles.
This device is popular in industries like consumer electronics, automotive, and renewable energy systems, where efficient power conversion is critical. Always refer to the datasheet for detailed electrical characteristics, thermal performance, and recommended operating conditions to ensure optimal application suitability.

Features

The HUF75339P3 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 60A, ensuring robust performance in high-current scenarios.
3. Low On-Resistance: Offers a low R_DS(on) value, typically around 10mΩ, which minimizes power loss and heat generation during operation.
4. High-Speed Switching: Designed for fast switching capabilities, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: Features a well-designed package that aids in effective heat dissipation.
6. Package Type: Usually available in TO-220 or similar packages, facilitating easy mounting and thermal management.
These features make the HUF75339P3 suitable for a wide range of electronic applications, ensuring efficiency and reliability.

Package

The HUF75339P3 is packaged in a TO-220 format. This package type is commonly used for power devices and provides efficient heat dissipation.

Pinout

The HUF75339P3 is a power MOSFET that typically features a pin count of 8. The main functions of its pins include:
1. Gate (G) - Controls the switch operation.
2. Drain (D) - Carries the load current.
3. Source (S) - Completes the circuit and provides a return path for current.
The specific pin configuration generally follows the standard package layout, where the gate pin activates the device, allowing current to flow between the drain and source. This MOSFET is used in various applications, such as power management and switching circuits, due to its efficiency and fast switching capabilities. Always refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics.

Manufacturer

The HUF75339P3 is manufactured by HUF Group, a global company specializing in automotive technology. HUF Group is known for its innovations in electronic and mechanical locking systems, as well as in vehicle access and security solutions. They provide products such as keyless entry systems, tire pressure monitoring systems, and various electronic components for the automotive industry. The company has a strong presence in the automotive sector, partnering with many major car manufacturers worldwide to develop advanced solutions that enhance vehicle safety and user convenience. Established in Germany, HUF has expanded its operations globally, reflecting its commitment to quality and innovation in automotive technologies.

Application

The HUF75339P3 is a high-performance MOSFET primarily used in power management applications, including DC-DC converters, power supply circuits, and motor control. Its low on-resistance and fast switching capabilities make it suitable for automotive applications, battery management systems, and industrial power systems. It is also utilized in high-speed switching and energy-efficient designs, contributing to improved thermal management and reduced energy loss in electronic devices.

Equivalent

The HUF75339P3 is a high-performance N-channel MOSFET. Equivalent products include the IRF7530, STP75NF75, and FQP75N06. When looking for equivalents, ensure similar voltage, current ratings, and on-resistance specifications to ensure compatibility in your application. Always verify datasheets for specific characteristics.

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