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HMC998APM5E
IC AMP GP 0HZ-22GHZ 32LFCSP-CAV
- 製造商
- 製造商。 部分 #HMC998APM5E
- 包 32-LFQFN Exposed Pad, CSP
- 資料表 HMC998APM5E DataSheet
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規格
| Package | Strip |
| ProductStatus | Active |
| Frequency | 0Hz ~ 22GHz |
| P1dB | 32dBm |
| Gain | 15dB |
| NoiseFigure | 8dB |
| RFType | General Purpose |
| Voltage-Supply | 11V ~ 15V |
| Current-Supply | 500mA |
| MountingType | Surface Mount |
| Package/Case | 32-LFQFN Exposed Pad, CSP |
概述
Description
The HMC998APM5E is a GaAs MMIC pHEMT power amplifier designed for RF and microwave applications. It operates in the frequency range from 17 to 24 GHz, making it suitable for point-to-point radio, VSAT, and satellite communications. This amplifier provides high linearity and gain, typically offering around 22 dB of gain and up to 1 watt (30 dBm) of output power, making it ideal for driving high power levels in demanding applications.
The device comes in a compact 5x5 mm plastic QFN package with 32 leads, which facilitates ease of integration into PCB designs. It also features an integrated temperature compensated on-chip power detector for accurate power measurements. The amplifier requires a single positive supply voltage, simplifying the power supply design. Additionally, its robust design ensures reliable performance over a wide temperature range.
With its combination of high performance, compact size, and ease of use, the HMC998APM5E is a versatile component for designers looking to enhance the power amplification stage in high-frequency communication systems.
The device comes in a compact 5x5 mm plastic QFN package with 32 leads, which facilitates ease of integration into PCB designs. It also features an integrated temperature compensated on-chip power detector for accurate power measurements. The amplifier requires a single positive supply voltage, simplifying the power supply design. Additionally, its robust design ensures reliable performance over a wide temperature range.
With its combination of high performance, compact size, and ease of use, the HMC998APM5E is a versatile component for designers looking to enhance the power amplification stage in high-frequency communication systems.
Features
The HMC998APM5E is a versatile GaAs MMIC power amplifier designed for various applications within the frequency range of 13 to 16 GHz. Key features include:
1. High Gain: It offers a gain of 24 dB, making it suitable for amplifying weak signals in receiver circuits.
2. Output Power: The amplifier delivers a P1dB (output power at 1 dB compression) of 29 dBm, ensuring robust signal amplification.
3. Efficiency: It exhibits high power-added efficiency, optimizing energy consumption for power-sensitive applications.
4. Input/Output Match: The device includes built-in input and output matching circuits, simplifying integration and reducing the need for external components.
5. Linear Performance: The HMC998APM5E maintains linear performance, ideal for high-data-rate communication systems.
6. Robust Package: It comes in a leadless 5x5 mm SMT QFN package, promoting ease of use in surface-mount designs.
7. Broad Applications: Suitable for military, space, and commercial wireless systems, including point-to-point radios and satellite communications.
Overall, the HMC998APM5E offers a combination of high gain, efficiency, and compact packaging, making it ideal for advanced RF and microwave applications.
1. High Gain: It offers a gain of 24 dB, making it suitable for amplifying weak signals in receiver circuits.
2. Output Power: The amplifier delivers a P1dB (output power at 1 dB compression) of 29 dBm, ensuring robust signal amplification.
3. Efficiency: It exhibits high power-added efficiency, optimizing energy consumption for power-sensitive applications.
4. Input/Output Match: The device includes built-in input and output matching circuits, simplifying integration and reducing the need for external components.
5. Linear Performance: The HMC998APM5E maintains linear performance, ideal for high-data-rate communication systems.
6. Robust Package: It comes in a leadless 5x5 mm SMT QFN package, promoting ease of use in surface-mount designs.
7. Broad Applications: Suitable for military, space, and commercial wireless systems, including point-to-point radios and satellite communications.
Overall, the HMC998APM5E offers a combination of high gain, efficiency, and compact packaging, making it ideal for advanced RF and microwave applications.
Package
The HMC998APM5E is a GaAs MMIC power amplifier with a 5mm x 5mm SMT package. It's designed for high linearity and gain applications, typically used in communication systems. The surface-mount design facilitates integration in compact circuit boards.
Pinout
The HMC998APM5E is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifier. It is designed for use in RF and microwave applications. The device comes in a compact 5 mm x 5 mm, 32-lead, leadless chip carrier package. This implies that it has a pin count of 32.
The primary function of the HMC998APM5E is to amplify RF signals. It operates in the frequency range of 0.7 GHz to 1.0 GHz, making it suitable for applications such as cellular infrastructure and wireless communications. The amplifier typically provides high gain, high linearity, and high output power, which are crucial for maintaining signal integrity in communication systems. The HMC998APM5E features on-chip bias circuitry and is designed to require minimal external components, simplifying integration into RF systems.
The primary function of the HMC998APM5E is to amplify RF signals. It operates in the frequency range of 0.7 GHz to 1.0 GHz, making it suitable for applications such as cellular infrastructure and wireless communications. The amplifier typically provides high gain, high linearity, and high output power, which are crucial for maintaining signal integrity in communication systems. The HMC998APM5E features on-chip bias circuitry and is designed to require minimal external components, simplifying integration into RF systems.
Manufacturer
The HMC998APM5E is manufactured by Analog Devices, Inc. Analog Devices is a multinational semiconductor company that specializes in the design and manufacturing of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. The company provides solutions across a wide range of applications and industries, including automotive, communication, industrial, consumer electronics, and healthcare. Analog Devices is known for its high-performance products that are used in complex and critical systems.
Application
The HMC998APM5E is a high linearity, GaAs MMIC power amplifier commonly used in applications such as wireless infrastructure, point-to-point radios, and test instrumentation. It operates in the 7.0 to 9.5 GHz frequency range, making it suitable for microwave and millimeter-wave communication systems. Its high gain and output power characteristics are ideal for boosting signal transmission in various RF and microwave applications.
Equivalent
The HMC998APM5E is a GaAs MMIC power amplifier used in RF and microwave applications. Equivalent products may include:
1. Analog Devices HMC994APM5E
2. Qorvo TGA2594
3. Mini-Circuits PHA-13HLN+
These products offer similar functionality in terms of power amplification, frequency range, and are suitable for similar applications in communications and radar systems. Always check the datasheets for exact specifications and compatibility before substituting components.
1. Analog Devices HMC994APM5E
2. Qorvo TGA2594
3. Mini-Circuits PHA-13HLN+
These products offer similar functionality in terms of power amplification, frequency range, and are suitable for similar applications in communications and radar systems. Always check the datasheets for exact specifications and compatibility before substituting components.
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