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HMC580ST89E
IC RF AMP GP 0HZ-1GHZ SOT89-3
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- 製造商。 部分 #HMC580ST89E
- 包 TO-243AA
- 資料表 HMC580ST89E DataSheet
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規格
| Package | Strip |
| ProductStatus | Obsolete |
| Frequency | 0Hz ~ 1GHz |
| P1dB | 19dBm |
| Gain | 17dB |
| NoiseFigure | 2.8dB |
| RFType | General Purpose |
| Voltage-Supply | 5V |
| Current-Supply | 110mA |
| MountingType | Surface Mount |
| Package/Case | TO-243AA |
概述
Description
The HMC580ST89E is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) distributed amplifier designed for high-frequency applications. It operates over a wide bandwidth from DC to 20 GHz, providing high gain and output power. This amplifier features a compact design, ideal for use in various high-speed communication systems, including satellite communication, military applications, and instrumentation.
Key features include a typical gain of 15 dB, an output power of up to 20 dBm, and a low noise figure, making it suitable for both amplification and signal boosting applications. The HMC580ST89E is housed in a miniature surface-mount package, ensuring ease of integration into existing systems and printed circuit boards (PCBs).
Its robust performance and reliability are supported by its ability to operate under a wide range of temperatures, making it versatile for different environments. The HMC580ST89E is designed to meet the needs of modern RF and microwave applications, offering a combination of performance, efficiency, and compactness.
Key features include a typical gain of 15 dB, an output power of up to 20 dBm, and a low noise figure, making it suitable for both amplification and signal boosting applications. The HMC580ST89E is housed in a miniature surface-mount package, ensuring ease of integration into existing systems and printed circuit boards (PCBs).
Its robust performance and reliability are supported by its ability to operate under a wide range of temperatures, making it versatile for different environments. The HMC580ST89E is designed to meet the needs of modern RF and microwave applications, offering a combination of performance, efficiency, and compactness.
Features
The HMC580ST89E is a GaAs MMIC voltage-controlled oscillator (VCO) designed for RF and microwave applications. Key features include:
1. Frequency Range: It operates within a specific frequency range, typically covering several GHz, making it suitable for various high-frequency applications.
2. Output Power: The device delivers consistent output power, typically around 0 dBm, ensuring reliable signal strength across its operating range.
3. Phase Noise: It offers low phase noise performance, which is crucial for maintaining signal integrity in communication systems.
4. Supply Voltage: The VCO operates with a single positive supply voltage, simplifying power management in system designs.
5. Tuning Voltage: It uses a tuning voltage to adjust the output frequency, providing flexibility for frequency control in dynamic systems.
6. Size and Package: The HMC580ST89E is available in a compact SMT (surface mount technology) package, facilitating easy integration into printed circuit boards.
These features make the HMC580ST89E suitable for applications in broadband communications, test equipment, and other RF systems where compact size, low phase noise, and high-frequency stability are essential.
1. Frequency Range: It operates within a specific frequency range, typically covering several GHz, making it suitable for various high-frequency applications.
2. Output Power: The device delivers consistent output power, typically around 0 dBm, ensuring reliable signal strength across its operating range.
3. Phase Noise: It offers low phase noise performance, which is crucial for maintaining signal integrity in communication systems.
4. Supply Voltage: The VCO operates with a single positive supply voltage, simplifying power management in system designs.
5. Tuning Voltage: It uses a tuning voltage to adjust the output frequency, providing flexibility for frequency control in dynamic systems.
6. Size and Package: The HMC580ST89E is available in a compact SMT (surface mount technology) package, facilitating easy integration into printed circuit boards.
These features make the HMC580ST89E suitable for applications in broadband communications, test equipment, and other RF systems where compact size, low phase noise, and high-frequency stability are essential.
Package
The HMC580ST89E is packaged in a surface-mount, 8-lead ST-89 plastic package. It is designed for applications in radio frequency and microwave circuits. The compact size is suitable for high-frequency phase-locked loops and other RF applications.
Pinout
The HMC580ST89E is a GaAs MMIC voltage-controlled attenuator. It has a 6-lead SOT-89 package. The pin configuration and functions are as follows:
1. Pin 1 (Vctl): This is the control voltage pin. Adjusting the voltage at this pin changes the attenuation level of the device.
2. Pin 2 (GND): This is the ground pin, which should be connected to the RF and DC ground.
3. Pin 3 (RFC): This is the RF common port. It is one of the RF ports used in transmitting the RF signal through the device.
4. Pin 4 (GND): This is another ground pin for providing a stable ground connection.
5. Pin 5 (RFIN): This is the RF input port where the RF signal is fed into the device.
6. Pin 6 (RFOUT): This is the RF output port where the attenuated RF signal is output from the device.
The primary function of the HMC580ST89E is to provide a variable attenuation of RF signals, making it suitable for use in RF and microwave applications.
1. Pin 1 (Vctl): This is the control voltage pin. Adjusting the voltage at this pin changes the attenuation level of the device.
2. Pin 2 (GND): This is the ground pin, which should be connected to the RF and DC ground.
3. Pin 3 (RFC): This is the RF common port. It is one of the RF ports used in transmitting the RF signal through the device.
4. Pin 4 (GND): This is another ground pin for providing a stable ground connection.
5. Pin 5 (RFIN): This is the RF input port where the RF signal is fed into the device.
6. Pin 6 (RFOUT): This is the RF output port where the attenuated RF signal is output from the device.
The primary function of the HMC580ST89E is to provide a variable attenuation of RF signals, making it suitable for use in RF and microwave applications.
Manufacturer
The HMC580ST89E is manufactured by Analog Devices, Inc. Analog Devices is a multinational company known for designing and manufacturing semiconductor products and solutions. It specializes in data conversion and signal processing technology, serving various industries, including communications, automotive, industrial, healthcare, and consumer electronics. The company focuses on developing high-performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits used in a wide range of electronic equipment.
Application
The HMC580ST89E is used in applications such as cellular/3G infrastructure, WiMAX, and WiBro systems, where it functions as a gain block amplifier. It is also suitable for use in base stations, repeaters, and other communication systems that require wideband performance and high linearity. Its compact size and robust performance make it ideal for RF/microwave applications in both commercial and industrial settings.
Equivalent
The HMC580ST89E is a voltage-controlled attenuator from Analog Devices, suitable for RF and microwave applications. Equivalent products include the RFSA3713 from Qorvo, PE4302 from pSemi (formerly Peregrine Semiconductor), and the Hittite HMC1119. These components offer similar RF performance and functionality, but users should verify specifications such as frequency range, attenuation range, and power handling to ensure compatibility with their specific application requirements.
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