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HMC451LP3E
IC RF AMP GP 5GHZ-18GHZ 16SMT
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- 資料表 HMC451LP3E DataSheet
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規格
| Package | Strip |
| ProductStatus | Active |
| Frequency | 5GHz ~ 18GHz |
| P1dB | 19dBm |
| Gain | 16dB |
| NoiseFigure | 7dB |
| RFType | General Purpose |
| Voltage-Supply | 5V |
| Current-Supply | 150mA |
| MountingType | Surface Mount |
| Package/Case | 16-VFQFN Exposed Pad |
概述
Description
The HMC451LP3E is a versatile GaAs MMIC (Monolithic Microwave Integrated Circuit) medium power amplifier designed for RF and microwave applications. It operates within the frequency range of 1.7 GHz to 4.0 GHz. Key features include a high gain of around 20 dB, consistent output power of 1dB compression (P1dB) of approximately 20 dBm, and an impressive output third-order intercept point (OIP3) of 34 dBm, which ensures linear performance across its operating range. The amplifier is housed in a compact 3x3 mm leadless plastic surface-mount package, making it suitable for space-constrained applications.
The HMC451LP3E is well-suited for a variety of applications, including cellular/3G, WiMAX, broadband, and satellite communication systems. Its robust design provides remarkable stability and excellent performance across wide bandwidths. The device requires a single positive supply voltage, simplifying power supply design, and its input/output matched to 50 Ohms facilitates easy integration into RF systems. In summary, the HMC451LP3E offers high performance in a compact package, making it an ideal choice for boosting signal strength in various RF applications.
The HMC451LP3E is well-suited for a variety of applications, including cellular/3G, WiMAX, broadband, and satellite communication systems. Its robust design provides remarkable stability and excellent performance across wide bandwidths. The device requires a single positive supply voltage, simplifying power supply design, and its input/output matched to 50 Ohms facilitates easy integration into RF systems. In summary, the HMC451LP3E offers high performance in a compact package, making it an ideal choice for boosting signal strength in various RF applications.
Features
The HMC451LP3E is a versatile GaAs MMIC power amplifier designed for applications in various communication systems. Key features include:
1. Frequency Range: Operates from 5.0 to 20.0 GHz, making it suitable for a wide range of applications.
2. Output Power: Provides a typical output power of 24 dBm (250 mW) at 1 dB compression point, delivering robust performance for medium power applications.
3. Gain: Offers a gain of 13 dB, ensuring strong signal amplification with low distortion.
4. Supply Voltage: Requires a single positive supply voltage of +5V, simplifying power supply design.
5. Efficiency: High PAE (Power Added Efficiency) of up to 23%, optimizing power consumption and thermal performance.
6. Impedance: Designed for a 50-ohm system, easing integration into existing RF designs without the need for additional matching components.
7. Package: Comes in a compact 3x3 mm SMT package, facilitating easy assembly in space-constrained applications.
8. Bias Control: Features an adjustable gate bias voltage for performance optimization and versatility in different operating conditions.
These attributes make the HMC451LP3E ideal for point-to-point and point-to-multipoint radios, military, space, and test equipment applications.
1. Frequency Range: Operates from 5.0 to 20.0 GHz, making it suitable for a wide range of applications.
2. Output Power: Provides a typical output power of 24 dBm (250 mW) at 1 dB compression point, delivering robust performance for medium power applications.
3. Gain: Offers a gain of 13 dB, ensuring strong signal amplification with low distortion.
4. Supply Voltage: Requires a single positive supply voltage of +5V, simplifying power supply design.
5. Efficiency: High PAE (Power Added Efficiency) of up to 23%, optimizing power consumption and thermal performance.
6. Impedance: Designed for a 50-ohm system, easing integration into existing RF designs without the need for additional matching components.
7. Package: Comes in a compact 3x3 mm SMT package, facilitating easy assembly in space-constrained applications.
8. Bias Control: Features an adjustable gate bias voltage for performance optimization and versatility in different operating conditions.
These attributes make the HMC451LP3E ideal for point-to-point and point-to-multipoint radios, military, space, and test equipment applications.
Package
The HMC451LP3E is housed in a 3x3 mm leadless QFN (Quad Flat No-Lead) package.
Pinout
The HMC451LP3E is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifier. It features a 16-pin package. The primary function of this device is to amplify RF signals, and it is used in various applications such as point-to-point radios, point-to-multipoint radios, and radar systems.
Key specifications include:
- Frequency range: 5.0 GHz to 20.0 GHz
- Gain: Typically around 13.5 dB
- Output power for 1 dB compression (P1dB): Approximately 20 dBm
- Supply voltage: Typically 5V
The device is designed to deliver high linearity, gain, and output power, making it highly suitable for applications requiring efficient power amplification across wide frequency ranges.
Key specifications include:
- Frequency range: 5.0 GHz to 20.0 GHz
- Gain: Typically around 13.5 dB
- Output power for 1 dB compression (P1dB): Approximately 20 dBm
- Supply voltage: Typically 5V
The device is designed to deliver high linearity, gain, and output power, making it highly suitable for applications requiring efficient power amplification across wide frequency ranges.
Manufacturer
The HMC451LP3E is manufactured by Analog Devices, Inc. Analog Devices is a multinational semiconductor company that specializes in the design and manufacturing of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. The company's products are widely used in various industries, including communications, automotive, industrial, instrumentation, and consumer electronics. Analog Devices is known for its innovative solutions that address complex engineering challenges, providing components that enhance the performance and efficiency of electronic devices.
Application
The HMC451LP3E is a GaAs MMIC power amplifier commonly used in applications such as microwave radios, VSATs, military radar, test instrumentation, and communication systems. It operates in the frequency range of 5 to 20 GHz, making it suitable for high-frequency applications. Its compact size and robustness make it ideal for use in various RF and microwave integrated circuits, where high linearity and power are required.
Equivalent
The HMC451LP3E is a GaAs MMIC medium power amplifier. Equivalent products may include:
1. Analog Devices HMC476MP86
2. Qorvo TQP3M9036
3. Mini-Circuits PHA-1+
These alternatives may not be exact replacements and could differ in specifications such as frequency range, gain, or power output. Always check datasheets to ensure compatibility with your application.
1. Analog Devices HMC476MP86
2. Qorvo TQP3M9036
3. Mini-Circuits PHA-1+
These alternatives may not be exact replacements and could differ in specifications such as frequency range, gain, or power output. Always check datasheets to ensure compatibility with your application.
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