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HMC451LC3TR
IC RF AMP GP 5GHZ-20GHZ 16SMT
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- 製造商。 部分 #HMC451LC3TR
- 包 VFQFN-16
- 資料表 HMC451LC3TR DataSheet
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| Frequency | 5GHz ~ 20GHz |
| P1dB | 19.5dBm |
| Gain | 17dB |
| NoiseFigure | 7dB |
| RFType | General Purpose |
| Voltage-Supply | 5V |
| Current-Supply | 114mA |
| MountingType | Surface Mount |
| Package/Case | 16-VFQFN Exposed Pad |
概述
Description
The HMC451LC3TR is a GaAs MMIC (Monolithic Microwave Integrated Circuit) power amplifier designed for use in RF and microwave applications, particularly in the frequency range of 17 to 22 GHz. It is commonly deployed in point-to-point and point-to-multipoint radios, military applications, and communication systems where high linearity and gain are required.
Key features of the HMC451LC3TR include a typical gain of 18 dB, a P1dB (output power at 1 dB compression) of around 24 dBm, and excellent input/output return loss. It operates from a single positive supply voltage, simplifying integration into systems. The device is housed in a 3 x 3 mm SMT (Surface-Mount Technology) package, which is leadless and RoHS compliant, making it suitable for compact and environmentally friendly designs.
The HMC451LC3TR is favored for its robust performance, compact size, and ease of integration, offering a reliable solution for designers working in high-frequency RF environments.
Key features of the HMC451LC3TR include a typical gain of 18 dB, a P1dB (output power at 1 dB compression) of around 24 dBm, and excellent input/output return loss. It operates from a single positive supply voltage, simplifying integration into systems. The device is housed in a 3 x 3 mm SMT (Surface-Mount Technology) package, which is leadless and RoHS compliant, making it suitable for compact and environmentally friendly designs.
The HMC451LC3TR is favored for its robust performance, compact size, and ease of integration, offering a reliable solution for designers working in high-frequency RF environments.
Features
The HMC451LC3TR is a GaAs MMIC (Monolithic Microwave Integrated Circuit) medium power amplifier, renowned for its high performance in RF applications. Key features include:
1. Frequency Range: Operates between 5.0 and 20.0 GHz, making it versatile for various applications.
2. Gain: Provides a gain of 12.5 dB, which is consistent across its frequency range.
3. Output Power: Delivers an output power of 20 dBm at 1 dB compression, suitable for medium power applications.
4. P1dB: Offers a P1dB of 20 dBm, ensuring reliable linearity.
5. IP3: Achieves an output third-order intercept point (OIP3) of 29 dBm, enhancing signal integrity.
6. Noise Figure: Typically around 5 dB, balancing performance with efficiency.
7. Input/Output Return Loss: Both input and output return loss are around 10 dB, indicating good impedance matching.
8. Package: Comes in a compact 3 x 3 mm leadless ceramic surface-mount package, facilitating ease of integration.
These features make the HMC451LC3TR suitable for a variety of applications, including point-to-point and point-to-multipoint radios, test equipment, and military communications.
1. Frequency Range: Operates between 5.0 and 20.0 GHz, making it versatile for various applications.
2. Gain: Provides a gain of 12.5 dB, which is consistent across its frequency range.
3. Output Power: Delivers an output power of 20 dBm at 1 dB compression, suitable for medium power applications.
4. P1dB: Offers a P1dB of 20 dBm, ensuring reliable linearity.
5. IP3: Achieves an output third-order intercept point (OIP3) of 29 dBm, enhancing signal integrity.
6. Noise Figure: Typically around 5 dB, balancing performance with efficiency.
7. Input/Output Return Loss: Both input and output return loss are around 10 dB, indicating good impedance matching.
8. Package: Comes in a compact 3 x 3 mm leadless ceramic surface-mount package, facilitating ease of integration.
These features make the HMC451LC3TR suitable for a variety of applications, including point-to-point and point-to-multipoint radios, test equipment, and military communications.
Package
The HMC451LC3TR is a GaAs MMIC power amplifier with a 3x3 mm leadless chip carrier (LCC) package. It is designed for surface-mount technology, offering compact size and ease of integration in RF and microwave applications.
Pinout
The HMC451LC3TR is a GaAs MMIC distributed power amplifier designed for wideband applications. It comes in a 3x3 mm ceramic leadless chip carrier (LCC) package. The device has a pin count of 16. The primary function of the HMC451LC3TR is to provide high gain and output power over a broad frequency range from DC to 6 GHz, making it suitable for various RF and microwave applications.
Key features include high output power, typically around 27 dBm, and flat gain of about 13 dB. It supports a wide range of applications, including military, space, and communications systems. The amplifier is also equipped with an internal bias circuit, which simplifies external bias requirements. It's important to refer to the manufacturer's datasheet for detailed pin configuration and specific electrical characteristics.
Key features include high output power, typically around 27 dBm, and flat gain of about 13 dB. It supports a wide range of applications, including military, space, and communications systems. The amplifier is also equipped with an internal bias circuit, which simplifies external bias requirements. It's important to refer to the manufacturer's datasheet for detailed pin configuration and specific electrical characteristics.
Manufacturer
The HMC451LC3TR is manufactured by Analog Devices, Inc., a company known for designing and producing a wide range of analog, mixed-signal, and digital signal processing (DSP) integrated circuits. Analog Devices serves various industries, including telecommunications, automotive, industrial, consumer electronics, and healthcare, providing products such as amplifiers, data converters, sensors, and power management devices.
Application
The HMC451LC3TR is a broadband medium power amplifier commonly used in various RF and microwave applications. Its application areas include wireless infrastructure, point-to-point radios, military communications, radar systems, and test equipment. It is particularly suited for use in the frequency range of 1.7 to 4.0 GHz, offering high gain and output power, making it a versatile component in RF signal amplification tasks.
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