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HIP2100IBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 9V ~ 14V |
| Logic Voltage - VIL, VIH | 4V, 7V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 10ns, 10ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | HIP2100 |
| High Side Voltage - Max (Bootstrap) | 114 V |
概述
Description
HIP2100IBZ is not a widely recognized term or acronym as of my last update in October 2023. It could potentially refer to a specific course, product, project, or code relevant to a particular organization or institution. If it's related to a course or product, it might be an identifier or code used internally. To give a more precise introduction, additional context is needed about the organization or field in which this term is used. If you have more details or if this is from a specific domain such as astronomy, healthcare, technology, etc., please provide more information or check with the relevant source or institution for accurate details.
Features
The HIP2100IBZ is a half-bridge MOSFET driver IC produced by Renesas Electronics. It is designed to drive N-channel MOSFETs in a half-bridge configuration, which is commonly used in applications such as motor drives, DC-DC converters, and other power management systems. Key features of the HIP2100IBZ include:
1. Voltage Range: It operates over a wide supply voltage range, typically up to 20V, making it versatile for various applications.
2. Gate Drive Capability: The IC provides high peak current drive capabilities, which ensures fast switching of the MOSFETs, thereby improving efficiency.
3. Propagation Delay: It offers low propagation delay, enhancing the overall speed and performance of the system.
4. Shoot-Through Protection: The HIP2100IBZ includes built-in protection features to prevent shoot-through, which helps in maintaining the reliability of the circuit.
5. Bootstrap Functionality: It supports a bootstrap circuit for the high-side driver, simplifying the design and reducing component count.
6. Temperature Range: The device is designed to operate over a wide temperature range, suitable for industrial applications.
These features make the HIP2100IBZ suitable for efficient and reliable power management in various electronic systems.
1. Voltage Range: It operates over a wide supply voltage range, typically up to 20V, making it versatile for various applications.
2. Gate Drive Capability: The IC provides high peak current drive capabilities, which ensures fast switching of the MOSFETs, thereby improving efficiency.
3. Propagation Delay: It offers low propagation delay, enhancing the overall speed and performance of the system.
4. Shoot-Through Protection: The HIP2100IBZ includes built-in protection features to prevent shoot-through, which helps in maintaining the reliability of the circuit.
5. Bootstrap Functionality: It supports a bootstrap circuit for the high-side driver, simplifying the design and reducing component count.
6. Temperature Range: The device is designed to operate over a wide temperature range, suitable for industrial applications.
These features make the HIP2100IBZ suitable for efficient and reliable power management in various electronic systems.
Package
The HIP2100IBZ is typically available in an 8-lead SOIC (Small Outline Integrated Circuit) package. This type of package is commonly used for surface mount technology, providing a compact and reliable form factor suitable for various electronic applications.
Pinout
The HIP2100IBZ is a high-frequency, single-channel, N-Channel MOSFET driver IC. It comes in an 8-pin package. Here’s a brief overview of its pin functions:
1. VDD: Supply voltage for the driver.
2. HB: High-side bootstrap voltage.
3. HO: High-side gate drive output.
4. HS: High-side source connection, typically connected to the source of the high-side MOSFET.
5. HI: High-side control input.
6. LI: Low-side control input.
7. LO: Low-side gate drive output.
8. VSS: Ground reference for the IC.
The HIP2100IBZ is designed to drive high-side and low-side N-channel MOSFETs efficiently and is suitable for high-frequency applications like DC-DC converters, motor drives, and other power management systems. It uses a bootstrap configuration for the high-side driver, and its design supports fast switching speeds by providing short propagation delays and high peak currents.
1. VDD: Supply voltage for the driver.
2. HB: High-side bootstrap voltage.
3. HO: High-side gate drive output.
4. HS: High-side source connection, typically connected to the source of the high-side MOSFET.
5. HI: High-side control input.
6. LI: Low-side control input.
7. LO: Low-side gate drive output.
8. VSS: Ground reference for the IC.
The HIP2100IBZ is designed to drive high-side and low-side N-channel MOSFETs efficiently and is suitable for high-frequency applications like DC-DC converters, motor drives, and other power management systems. It uses a bootstrap configuration for the high-side driver, and its design supports fast switching speeds by providing short propagation delays and high peak currents.
Manufacturer
The HIP2100IBZ is manufactured by Renesas Electronics Corporation. Renesas is a global semiconductor company that designs and manufactures a broad range of microcontrollers, analog, power, and SoC (System on Chip) products. They serve diverse markets, including automotive, industrial, home electronics, and information communication technology, providing solutions that integrate hardware and software for various applications.
Application
The HIP2100IBZ is a half-bridge driver IC commonly used in applications such as motor control, power supplies, and DC-DC converters. It is suitable for driving high-side and low-side N-channel MOSFETs in various designs requiring efficient power management and control. It is often utilized in industrial, automotive, and consumer electronics where precise control of power devices is crucial.
Equivalent
The HIP2100IBZ is a high-side or low-side N-channel MOSFET driver. Equivalent products include:
1. MIC5019 from Microchip Technology
2. IR2101 from Infineon Technologies
3. FAN3111 from ON Semiconductor
4. TC4420 from Microchip Technology
These alternatives provide similar functionalities and features, but always check specific datasheets to ensure compatibility with your design requirements.
1. MIC5019 from Microchip Technology
2. IR2101 from Infineon Technologies
3. FAN3111 from ON Semiconductor
4. TC4420 from Microchip Technology
These alternatives provide similar functionalities and features, but always check specific datasheets to ensure compatibility with your design requirements.
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