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H5TQ4G83EFR-RDC

Name: H5TQ4G83EFR-RDC
Rating: 4.7 (12 reviews)

4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-78 Memory (ICs) RoHS

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資料表 H5TQ4G83EFR-RDC DataSheet
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規格

Packaging	FBGA-78
Clock Frequency	1.066GHz
Memory Format	DDR3 SDRAM
Memory Size	4Gbit
Operating temperature	-40℃~+105℃
Voltage - Supply	1.425V~1.575V

概述

Description

H5TQ4G83EFR-RDC appears to be a specific code or identifier, possibly related to a product, service, or software version. Without additional context, it is challenging to determine its exact meaning or relevance. It could represent a model number, a product key, or a reference in a database.
If you are looking for an introduction to a product or service associated with this code, please provide more details, such as the industry it pertains to or specific features you are interested in. This will help tailor the response to your needs.

Features

The H5TQ4G83EFR-RDC is a 4GB DDR3 SDRAM memory module designed for use in laptops and other compact computing devices. Key features include:
1. Capacity: 4GB, providing a balance between performance and power efficiency.
2. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), which is ideal for space-constrained environments like laptops.
3. Speed: Operates at a frequency of 1600 MHz, allowing for efficient data transfer rates.
4. Data Rate: DDR3 technology, which doubles the data rate compared to its predecessor, DDR2.
5. Voltage: Typically operates at 1.5V, contributing to lower power consumption and heat generation.
6. Compatibility: Works with various Intel and AMD processors, making it versatile for upgrades.
7. Latency: CL11 (CAS latency), which affects the speed of data retrieval.
Overall, the H5TQ4G83EFR-RDC is designed for reliable performance in everyday computing tasks, enhancing system responsiveness and multitasking capabilities.

Package

The H5TQ4G83EFR-RDC is a DRAM memory chip packaged in a FBGA (Fine Ball Grid Array) format.

Pinout

The H5TQ4G83EFR-RDC is a DDR3 SDRAM memory chip with a total pin count of 78. It is designed for high-density memory applications and operates at a voltage of 1.5V. The primary functions include data storage and retrieval with a bandwidth of up to 1600 MT/s.
Key features include:
- 4 Gb density
- 8-bit input/output (I/O) for data handling
- Support for various modes, such as burst length and data masking
- Operating frequency up to 800 MHz (DDR3)
The chip is typically used in computing devices, such as desktops, laptops, and servers, providing efficient memory solutions for various applications. For specific pin functions, the datasheet should be consulted for detailed pin assignments related to power, ground, and data/command signaling.

Manufacturer

The H5TQ4G83EFR-RDC is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate that is one of the world's largest producers of electronic components, including semiconductors, memory chips, display panels, and consumer electronics. Founded in 1938, Samsung has diversified into various sectors, including telecommunications, home appliances, and digital media. The company is well-known for its innovation and leadership in technology, particularly in memory solutions like DRAM and NAND flash memory, which are crucial for computing and mobile devices.

Application

The H5TQ4G83EFR-RDC is a 4GB DDR3 SDRAM memory chip commonly used in consumer electronics, including smartphones, tablets, and laptops. Its application areas extend to gaming consoles, automotive systems, and industrial devices, where high-speed data processing and energy efficiency are critical. Additionally, it supports applications in networking equipment, IoT devices, and embedded systems, enhancing performance in various computing tasks.

Equivalent

The H5TQ4G83EFR-RDC is a 4Gb DDR3 SDRAM chip. Equivalent products include:
1. H5TQ4G83EFR-PBC (similar specs with different temperature range)
2. MT41K64M16HA-125 (Micron)
3. K4B4G1646D-BCK0 (Samsung)
4. IS43TR16640B-125 (ISSI)
Always verify specifications and compatibility for your specific application before replacement.