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H26M51002KPR
16GB eMMC 5.1 FBGA-153 Memory (ICs) RoHS
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規格
| Packaging | FBGA-153 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
| Controller Stand-By Current | 120uA |
| Interface | eMMC 5.1 |
| Memory Size | 16GB |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| NAND Stand-By Current | 30uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 250MB/S |
| Writing Speed in Sequence | 45MB/S |
概述
Description
H26M51002KPR is a specific type of NAND flash memory chip manufactured by Samsung. It is designed for data storage applications in various electronic devices, including smartphones, tablets, and embedded systems. This chip typically features high-density storage, offering significant capacity for data retention while maintaining fast read and write speeds.
The "H26M" prefix indicates the product series, while "51002" may denote specific characteristics such as the chip's architecture or capacity. The "KPR" suffix often signifies packaging and temperature range specifications.
Overall, H26M51002KPR is part of the evolution of flash memory technology aimed at supporting the growing demands for efficient and reliable storage solutions in modern electronics. Its use of advanced fabrication processes allows for improved performance and durability, making it suitable for both consumer and industrial applications.
The "H26M" prefix indicates the product series, while "51002" may denote specific characteristics such as the chip's architecture or capacity. The "KPR" suffix often signifies packaging and temperature range specifications.
Overall, H26M51002KPR is part of the evolution of flash memory technology aimed at supporting the growing demands for efficient and reliable storage solutions in modern electronics. Its use of advanced fabrication processes allows for improved performance and durability, making it suitable for both consumer and industrial applications.
Features
The H26M51002KPR is a 512 Mb (64MB) NAND flash memory device designed for high-density storage applications. Key features include:
1. Density: 512 Mb storage capacity, suited for embedded systems and mobile applications.
2. Interface: Uses a NAND flash interface for efficient data transfers, typically with an ONFI (Open NAND Flash Interface) standard.
3. Page Size: Supports various page sizes, typically around 2K or 4K bytes, optimizing read and write operations.
4. Data Transfer Rates: High-speed data transfer capabilities, enhancing performance for read/write cycles.
5. Endurance: Offers high program/erase cycles, making it reliable for repeated use in applications.
6. Low Power Consumption: Designed for energy efficiency, ideal for battery-operated devices.
7. Temperature Range: Operates within a wide temperature range, suitable for automotive and industrial applications.
These features make the H26M51002KPR suitable for consumer electronics, smartphones, and IoT devices.
1. Density: 512 Mb storage capacity, suited for embedded systems and mobile applications.
2. Interface: Uses a NAND flash interface for efficient data transfers, typically with an ONFI (Open NAND Flash Interface) standard.
3. Page Size: Supports various page sizes, typically around 2K or 4K bytes, optimizing read and write operations.
4. Data Transfer Rates: High-speed data transfer capabilities, enhancing performance for read/write cycles.
5. Endurance: Offers high program/erase cycles, making it reliable for repeated use in applications.
6. Low Power Consumption: Designed for energy efficiency, ideal for battery-operated devices.
7. Temperature Range: Operates within a wide temperature range, suitable for automotive and industrial applications.
These features make the H26M51002KPR suitable for consumer electronics, smartphones, and IoT devices.
Package
The H26M51002KPR is packaged in a TSOP (Thin Small Outline Package), commonly used for memory devices. This package type is designed for surface mounting and offers a compact footprint, making it suitable for space-constrained applications.
Pinout
The H26M51002KPR is a NAND flash memory chip produced by Hynix. It features a pin count of 48 pins. This device typically operates in a parallel interface mode and is designed for data storage applications in consumer electronics, mobile devices, and other embedded systems.
The main functions of the H26M51002KPR include:
1. Data Storage: It provides non-volatile memory for storing digital data even when power is turned off.
2. Read/Write Operations: It supports read, program, and erase operations, allowing data to be written and updated as needed.
3. Page and Block Management: The chip organizes data into pages and blocks, facilitating efficient data management and retrieval.
4. Interface Support: It communicates with the host system via a standard parallel interface, enabling integration with various devices.
This chip is known for its reliability and performance in handling memory-intensive applications.
The main functions of the H26M51002KPR include:
1. Data Storage: It provides non-volatile memory for storing digital data even when power is turned off.
2. Read/Write Operations: It supports read, program, and erase operations, allowing data to be written and updated as needed.
3. Page and Block Management: The chip organizes data into pages and blocks, facilitating efficient data management and retrieval.
4. Interface Support: It communicates with the host system via a standard parallel interface, enabling integration with various devices.
This chip is known for its reliability and performance in handling memory-intensive applications.
Manufacturer
The H26M51002KPR is manufactured by Hynix Semiconductor (now known as SK Hynix), a South Korean company. SK Hynix is one of the largest semiconductor manufacturers in the world, specializing in the production of memory chips, including DRAM and NAND flash memory. The company plays a crucial role in the global electronics supply chain, providing essential components for a wide range of devices, from smartphones to servers. Founded in 1983, SK Hynix has grown through technological innovation and strategic partnerships, catering to various sectors such as consumer electronics, computing, and mobile devices. As part of the SK Group, one of South Korea's largest conglomerates, SK Hynix emphasizes research and development to advance memory technologies and enhance performance in digital applications.
Application
The H26M51002KPR is a NAND flash memory device used primarily in consumer electronics, such as smartphones, tablets, and digital cameras. Its applications include data storage for multimedia files, firmware updates, and operating systems in embedded systems. Additionally, it is utilized in automotive electronics and industrial applications where non-volatile memory is required for reliable performance and data retention.
Equivalent
The H26M51002KPR chip is a 512Mb NAND Flash memory device. Equivalent products include:
- H26M51002GPR (similar specifications)
- H26M51001GPR (slightly different density)
- Micron MT29F512G08CBABA (NAND Flash)
- Samsung K9F1G08U0A (alternative NAND solution)
Always verify compatibility and specifications based on your specific application needs.
- H26M51002GPR (similar specifications)
- H26M51001GPR (slightly different density)
- Micron MT29F512G08CBABA (NAND Flash)
- Samsung K9F1G08U0A (alternative NAND solution)
Always verify compatibility and specifications based on your specific application needs.
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