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GD25D10CTEGR

Name: GD25D10CTEGR
Rating: 4.7 (12 reviews)

IC FLASH 1MBIT SPI/DUAL 8SOP

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規格

Series	GD25D
Part Status	Active
Base Product Number	GD25D10
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR (SLC)
Memory Size	1Mbit
Memory Organization	128K x 8
Memory Interface	SPI - Dual I/O
Clock Frequency	100 MHz
Write Cycle Time - Word, Page	80µs, 4ms
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Packaging	Tape & Reel (TR)
Access Time	6 ns

概述

Description

GD25D10CTEGR is a GigaDevice 1-Mbit serial SPI flash memory. It stores firmware or data non-volatile and is commonly used for boot ROMs and small code storage in microcontroller systems.
Key points
- Density/organization: 1,048,576 bits (128 KB), 8-bit I/O.
- Interface: SPI-compatible; standard and fast read modes.
- Voltage: 2.7–3.6 V supply.
- Memory operations: page program (typically 256-byte pages), sector erase (commonly 4 KB sectors), larger block erases, and chip erase; supports JEDEC/ID reading.
- Performance: fast read speeds in the tens of MHz range (exact numbers depend on device variant); typical low-power modes when idle.
- Package: 8-pin package; suffix TEGR denotes specific packaging/temperature/lead-free options per the datasheet.
- Applications: boot firmware, microcontroller code storage, small data logging.
For precise electrical specs, timing, package details, and the exact meaning of the TEGR suffix, consult the GD25D10C data sheet from GigaDevice.

Features

Here are the key features of GD25D10CTEGR (1 Mbit serial SPI flash):
- Density: 1 Megabit (128 KB) serial flash memory
- Interface: SPI-compatible (CS, CLK, MOSI, MISO); includes WP# and HOLD# pins
- Supply voltage: 2.7 V to 3.6 V
- Timing/ performance: Read up to ~80 MHz
- Organization and addressing: 256-byte page size; 4 KB sectors (32 sectors total); uses 3-byte addressing (not required to enable 4-byte mode for this density)
- Operations: Page program up to 256 bytes; Sector erase; Chip erase option
- Endurance/retention: ~100,000 erase/write cycles per sector; data retention around 20 years
- Power modes: Deep power-down and low-power standby
- Protection: Status register with block protection; hardware/software protection options
- Operating temperature: Industrial range, typically -40°C to +85°C
- Package: 8-pin package (TEGR variant)
Note: exact timings and sector counts may vary by calendar revision; refer to the datasheet for precise figures.

Package

GD25D10CTEGR uses an 8-pin SOP (SOIC) package. It is RoHS-compliant (lead-free) and typically available in Tape & Reel packaging.

Pinout

- Pin count: 8 pins (8-pin package)
- Function: 1 Mbit serial SPI flash memory used for storing code/data. Pins typical: CS, SCK, SI (MOSI), SO (MISO), WP, HOLD, VCC, GND.

Manufacturer

- Manufacturer: GigaDevice Semiconductor Inc.
- What kind of company: A Chinese fabless semiconductor company (headquartered in Beijing) that designs and markets flash memory ICs (serial NOR/NAND flash) and related solutions, outsourcing fabrication to contract foundries.

Application

- GD25D10CTEGR is a 1-Mbit SPI serial flash memory.
- Applications: store program code and bootloaders in microcontroller-based embedded systems.
- Firmware updates and recovery in consumer electronics.
- Parameter, calibration, and configuration data in industrial, IoT, and automotive devices.
- Small-footprint data/assets storage (look-up tables, fonts, logs) in wearables, sensors, and smart meters.

Equivalent

Equivalents (1M-bit, 2.7–3.6V SPI flash):
- Winbond W25Q10BV / W25Q10DW
- Macronix MX25L1005 / MX25L1006
- Spansion S25FL010A
- SST SST25VF010A
- ISSI IS25LP010A