FS50R06KE3

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FS50R06KE3

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規格

Mounting Style Screw Mount
Package / Case Econo 2
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Brand Infineon Technologies
Product Type IGBT Modules
Subcategory IGBTs
REACH - SVHC Details
Configuration Hex
Series Trench/Fieldstop IGBT3 - E3
Height 17 mm
Length 107.5 mm
Product IGBT Silicon Modules
Factory Pack Quantity:Factory Pack Quantity 10
Width 45 mm
Part # Aliases SP000091920 FS50R06KE3BOSA1
Unit Weight 6.349313 oz
Shipping Restrictions Mouser does not presently sell this product in your region.
Collector- Emitter Voltage VCEO Max 600 V
Continuous Collector Current at 25 C 70 A
Maximum Gate Emitter Voltage 20 V
Tradename EconoPACK

概述

Description

The FS50R06KE3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for various power electronics applications. It features a rated current of 50A and a voltage rating of 600V, making it suitable for use in motor drives, inverters, and converter systems. The module is part of the 3rd generation of IGBT technology, which enhances efficiency and reduces switching losses, improving overall system performance.
Key features include a low on-state voltage drop, fast switching capabilities, and high thermal stability, allowing for efficient operation in demanding environments. The FS50R06KE3 is packaged in a compact, robust module, facilitating easy integration into systems while providing reliable thermal management.
Applications include industrial automation, renewable energy systems (such as solar inverters), and power supplies. Overall, the FS50R06KE3 is ideal for engineers seeking an efficient and reliable solution for medium-power switching applications.

Features

The FS50R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for efficient power management. Key features include:
1. Rated Current: The module can handle a maximum continuous current of 50A, suitable for high-performance applications.
2. Voltage Rating: It supports a maximum collector-emitter voltage of 600V, making it suitable for various industrial and power applications.
3. Low Switching Loss: Designed for reduced switching losses, enhancing efficiency in inverter and converter applications.
4. Thermal Performance: Features an integrated heat sink for improved thermal management, enabling reliable operation at higher temperatures.
5. Compact Design: Its compact package allows for easy integration into various systems, reducing the overall footprint.
6. Robustness: Built to withstand harsh operating conditions, ensuring durability and longevity.
7. Applications: Commonly used in motor drives, renewable energy systems, and industrial automation.
Overall, the FS50R06KE3 is ideal for applications requiring high efficiency and reliability.

Package

The FS50R06KE3 is typically packaged in a TO-247 or similar type package. This package type is designed for high-power applications, providing good thermal performance and electrical insulation.

Pinout

The FS50R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. It features a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the IGBT, receiving the input signal to turn the device on or off.
2. Collector (C): This is the main current-carrying terminal, connected to the high voltage side of the circuit.
3. Emitter (E): This terminal is connected to the ground or the low voltage side, completing the circuit.
4. Emitter (E): This is another emitter pin, allowing for better thermal management and higher current handling.
5. Collector (C): This additional collector pin serves a similar purpose, providing an alternate connection point for current flow.
6. Gate (G): This extra gate pin helps in improving the switching performance and provides flexibility in layout design.
The FS50R06KE3 is designed for applications requiring high efficiency and fast switching, such as in motor drives and power conversion systems.

Manufacturer

The FS50R06KE3 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in automotive, industrial power control, and security technologies, producing a wide range of semiconductor solutions for various applications, including power management, sensors, and microcontrollers. The company is known for its innovation in power semiconductor devices, particularly IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are essential in motor drives, renewable energy systems, and electric vehicles. Infineon aims to drive the digitalization and decarbonization of various industries through its advanced product offerings.

Application

The FS50R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronic applications. Its key application areas include motor drives, industrial automation, power supplies, renewable energy systems (like solar inverters), and electric vehicles. It is ideal for high-efficiency switching in medium power applications, where it provides low conduction losses and high thermal stability.

Equivalent

The FS50R06KE3 is an IGBT module from Infineon. Equivalent products include:
1. FGA50N120 - Fairchild Semiconductor
2. MG50J6ES - Mitsubishi Electric
3. IGBT50R120 - STMicroelectronics
Always verify specifications, ratings, and application compatibility when considering alternatives.

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