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FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
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規格
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
| Power Dissipation (Max) | 2.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | FQT1N60 |
概述
Description
The FQT1N60CTF-WS is an N-channel MOSFET designed for high-voltage applications, specifically rated for a maximum drain-source voltage (V_DS) of 600V. It features a low on-resistance (R_DS(on)) that allows for efficient switching and reduced power loss, making it suitable for power electronics, including switch-mode power supplies, motor drives, and high-voltage converters.
This MOSFET is characterized by its fast switching speed, which enhances performance in high-frequency applications. It typically comes in a TO-220 package, facilitating effective thermal management due to its ability to dissipate heat.
Key specifications include a continuous drain current (I_D) of 1A, a gate threshold voltage (V_GS(th)) range, and a maximum gate-source voltage (V_GS) to ensure safe operation. The FQT1N60CTF-WS is often used in conjunction with other components in power circuits, providing reliability and high efficiency.
This device is ideal for engineers and designers looking to implement robust solutions in their electronic systems while maintaining energy efficiency.
This MOSFET is characterized by its fast switching speed, which enhances performance in high-frequency applications. It typically comes in a TO-220 package, facilitating effective thermal management due to its ability to dissipate heat.
Key specifications include a continuous drain current (I_D) of 1A, a gate threshold voltage (V_GS(th)) range, and a maximum gate-source voltage (V_GS) to ensure safe operation. The FQT1N60CTF-WS is often used in conjunction with other components in power circuits, providing reliability and high efficiency.
This device is ideal for engineers and designers looking to implement robust solutions in their electronic systems while maintaining energy efficiency.
Features
The FQT1N60CTF-WS is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage environments.
2. Current Rating: The continuous drain current (ID) is rated at 1A, which supports a range of applications.
3. RDS(on): It has a low on-resistance, typically around 1.7 ohms, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2V to 4V, allowing for compatible drive voltages.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for quick turn-on and turn-off times, enabling efficient operation in switching applications.
7. Applications: Commonly used in power management, motor control, and high-voltage switching applications.
Overall, the FQT1N60CTF-WS is a robust choice for various electronic applications requiring high voltage and efficient performance.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage environments.
2. Current Rating: The continuous drain current (ID) is rated at 1A, which supports a range of applications.
3. RDS(on): It has a low on-resistance, typically around 1.7 ohms, minimizing power loss and improving efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (VGS(th)) is between 2V to 4V, allowing for compatible drive voltages.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for quick turn-on and turn-off times, enabling efficient operation in switching applications.
7. Applications: Commonly used in power management, motor control, and high-voltage switching applications.
Overall, the FQT1N60CTF-WS is a robust choice for various electronic applications requiring high voltage and efficient performance.
Package
The FQT1N60CTF-WS is packaged in a TO-220 form factor, which is a widely used package type for power transistors. This package provides good thermal performance and is suitable for heat dissipation in various electronic applications.
Pinout
The FQT1N60CTF-WS is a N-channel MOSFET with a TO-220 package. It has three pins:
1. Gate (G): This pin controls the MOSFET's switching on and off. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It provides a return path for the load current.
The FQT1N60CTF-WS is designed for high-voltage applications, with a maximum V_DS of 600V and can handle a continuous drain current of up to 1A. It is commonly used in power management applications, such as switch-mode power supplies and motor control circuits.
1. Gate (G): This pin controls the MOSFET's switching on and off. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It provides a return path for the load current.
The FQT1N60CTF-WS is designed for high-voltage applications, with a maximum V_DS of 600V and can handle a continuous drain current of up to 1A. It is commonly used in power management applications, such as switch-mode power supplies and motor control circuits.
Manufacturer
The FQT1N60CTF-WS is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components and solutions, including power management, analog, and discrete devices. Founded in 1999, it has grown through various acquisitions and now serves diverse markets such as automotive, industrial, communications, and consumer electronics. The company focuses on innovation and sustainability, providing products that enable efficient energy use and enhanced performance in electronic applications.
Application
The FQT1N60CTF-WS is a high-voltage N-channel MOSFET, commonly used in applications such as power supplies, motor control, switching regulators, and inverters. Its high efficiency and fast switching capabilities make it suitable for consumer electronics, renewable energy systems, and industrial automation. Additionally, it can be used in various automotive applications for energy management and control systems.
Equivalent
The FQT1N60CTF-WS is a high-voltage N-channel MOSFET. Equivalent products include the IRFBC30, STP16NF06, and MTP75N60E. Always verify specifications like voltage, current rating, and package type for compatibility in your application.
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