FQPF19N20C

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FQPF19N20C

MOSFET N-CH 200V 19A TO220F

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規格

Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Base Product Number FQPF19

概述

Description

FQPF19N20C is a high-performance N-channel MOSFET designed for power applications, featuring low on-resistance and fast switching capabilities. It is commonly used in power management tasks, including DC-DC converters, motor drives, and high-frequency applications. With a maximum drain-source voltage of 200V and a continuous drain current rating of 19A, it offers significant efficiency for energy conversion processes. The device is housed in a TO-220 package, facilitating effective heat dissipation and easy integration into various circuits. Its characteristics make it suitable for applications requiring reliability and high thermal performance. Overall, FQPF19N20C stands out for its robustness and versatility in modern electronic designs.

Features

The FQPF19N20C is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 19A, with a pulsed current rating significantly higher, providing versatility in power handling.
3. Low On-Resistance: The device features a low on-resistance (R_DS(on)) of approximately 0.075 ohms at a gate-source voltage (V_GS) of 10V, which helps in reducing power losses during operation.
4. Fast Switching Speed: Capable of switching quickly, it is ideal for applications requiring high efficiency and rapid response times.
5. Thermal Management: It has an excellent thermal performance with a junction-to-case thermal resistance (RθJC) that allows for effective heat dissipation.
6. Package: Usually available in a TO-220 package, facilitating easy heatsinking.
These features make the FQPF19N20C suitable for various applications, including power supplies, motor drivers, and inverter circuits.

Package

The FQPF19N20C is typically packaged in a TO-220 form factor, which is a common package type for power MOSFETs. This package provides good thermal performance and is suitable for various applications, including power switching and amplification.

Pinout

The FQPF19N20C is an N-channel MOSFET with a total of 3 pins. Its pinout typically includes:
1. Gate (G) - This pin is used to control the switching of the MOSFET. Applying a voltage here allows the device to conduct.
2. Drain (D) - This pin is where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or negative side of the power supply. It completes the current path when the MOSFET is conducting.
The FQPF19N20C is designed for high-voltage applications, with a maximum voltage rating of 200V and a continuous drain current rating of 19A, making it suitable for power switching and amplification tasks in various electronics and power supply applications.

Manufacturer

The FQPF19N20C is manufactured by Fairchild Semiconductor, which is a company specializing in the design and production of a wide range of semiconductor products. Fairchild Semiconductor focuses on power management solutions, analog and mixed-signal devices, and various discrete components, including MOSFETs, diodes, and amplifiers. They serve multiple industries, including automotive, industrial, consumer electronics, and telecommunications. Fairchild Semiconductor is known for its innovation in semiconductor technology and has merged with ON Semiconductor, expanding its product offerings and market reach.

Application

The FQPF19N20C is a power MOSFET primarily used in applications such as power management, DC-DC converters, and switching power supplies. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency and fast switching capabilities. Additionally, it is often employed in inverter circuits and motor drives, where effective control of power delivery is essential.

Equivalent

The FQPF19N20C is an N-channel MOSFET. Equivalent products include the IRF320 and the STP20NM60. For alternatives, consider the MTP20N20E and the AUIRF3205. Ensure to check the specifications such as voltage, current rating, and RDS(on) for compatibility based on your application.

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