FQPF12N60C

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FQPF12N60C

MOSFET N-CH 600V 12A TO220F

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規格

Series QFET®
Part Status Obsolete
Base Product Number FQPF1
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
Power Dissipation (Max) 51W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package TO-220-3 Full Pack
Packaging Tube

概述

Description

The FQPF12N60C is a N-channel MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 12A, making it suitable for high-voltage and high-current circuits. Its low on-resistance (Rds(on)) of 0.18Ω at Vgs = 10V enhances efficiency by reducing power loss during operation.
This MOSFET is commonly used in applications such as power supplies, motor control, and other circuits requiring efficient switching. The device is characterized by fast switching speeds, facilitating high-frequency operation. Additionally, its robust package options, typically in TO-220 or TO-247 formats, allow for effective heat dissipation.
The FQPF12N60C is often selected for applications in renewable energy systems, lighting systems, and various industrial automation processes where reliability and performance are critical. Proper thermal management and appropriate gate drive circuits are essential for optimal performance in practical applications.

Features

The FQPF12N60C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 12A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance is low (typically around 0.18 ohms), which reduces power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) of 2-4V, facilitating easier drive with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides excellent thermal performance and is easy to mount.
6. Fast Switching: Designed for fast switching applications, it is ideal for use in power supplies, inverters, and motor drivers.
Due to its robust specifications, the FQPF12N60C is widely used in industrial, automotive, and renewable energy applications.

Package

The FQPF12N60C is typically packaged in a TO-220 format, which is a standard package for power MOSFETs. This package type provides good thermal performance and is suitable for high-power applications.

Pinout

The FQPF12N60C is an N-channel MOSFET with a pin count of 3. The pins are typically identified as follows:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 12A. It is commonly used in power conversion and switching applications.

Manufacturer

The FQPF12N60C is manufactured by Fairchild Semiconductor, which is a company specializing in the design and production of semiconductor solutions. Fairchild Semiconductor focuses on power management, analog, and mixed-signal devices, as well as high-performance switching and discrete components. Established in 1957, the company has a strong reputation for innovation and quality in the semiconductor industry. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, expanding its product offerings and market reach. Today, ON Semiconductor continues to produce and support Fairchild's legacy products, including the FQPF12N60C, which is a high-voltage, N-channel MOSFET used in various applications, such as power supplies and motor control.

Application

The FQPF12N60C is a high-voltage N-channel MOSFET commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and inverters. It is suitable for power converters, lighting control systems, and various industrial automation applications due to its high-speed switching capabilities and efficiency. Additionally, it can be utilized in electronic ballasts and other power management systems.

Equivalent

Equivalent products to the FQPF12N60C MOSFET include the STP12NK60Z, IRF120, and MTP12N60E. Ensure to check the specifications, such as voltage rating, current rating, and RDS(on), to confirm compatibility for your specific application.

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