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FQD3P50TM
MOSFET P-CH 500V 2.1A DPAK
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 2.1A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.9Ohm @ 1.05A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 660 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
概述
Description
FQD3P50TM is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It typically features a 50V drain-source voltage rating and a continuous current capability of around 3A. The device is optimized for low on-resistance (R_DS(on)), which reduces power loss and improves thermal performance during operation.
Applications for the FQD3P50TM include power management circuits, DC-DC converters, and various switching applications in electronic devices. Its fast switching speed makes it suitable for high-frequency applications, while its robust construction ensures reliability in demanding environments.
When using this MOSFET, designers should consider parameters such as gate threshold voltage, maximum power dissipation, and thermal resistance to ensure optimal performance within their specific circuit configurations. The FQD3P50TM is often encapsulated in a surface-mount package, facilitating compact designs and efficient thermal management in modern electronics.
Applications for the FQD3P50TM include power management circuits, DC-DC converters, and various switching applications in electronic devices. Its fast switching speed makes it suitable for high-frequency applications, while its robust construction ensures reliability in demanding environments.
When using this MOSFET, designers should consider parameters such as gate threshold voltage, maximum power dissipation, and thermal resistance to ensure optimal performance within their specific circuit configurations. The FQD3P50TM is often encapsulated in a surface-mount package, facilitating compact designs and efficient thermal management in modern electronics.
Features
The FQD3P50TM is a P-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum V_DS of -50V, making it suitable for high-voltage environments.
2. Current Rating: The device supports continuous drain current of up to -3A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance of around 0.5 ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from -1 to -3V, enabling effective switching with lower gate drive levels.
5. Package: It is available in a TO-220 package, which facilitates heat dissipation and makes it easy to handle in various applications.
6. Applications: Commonly used in power supplies, motor drivers, and other circuits requiring reliable switching performance.
Overall, the FQD3P50TM is characterized by its robust specifications, making it a versatile choice for electronic design engineers.
1. Voltage Rating: It has a maximum V_DS of -50V, making it suitable for high-voltage environments.
2. Current Rating: The device supports continuous drain current of up to -3A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance of around 0.5 ohms, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from -1 to -3V, enabling effective switching with lower gate drive levels.
5. Package: It is available in a TO-220 package, which facilitates heat dissipation and makes it easy to handle in various applications.
6. Applications: Commonly used in power supplies, motor drivers, and other circuits requiring reliable switching performance.
Overall, the FQD3P50TM is characterized by its robust specifications, making it a versatile choice for electronic design engineers.
Package
The FQD3P50TM is typically packaged in a TO-220 package type, which is a popular choice for power MOSFETs due to its good thermal performance and ease of mounting.
Pinout
The FQD3P50TM is a P-channel MOSFET with a pin count of 3. The primary functions of its pins are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows the device to turn on and conduct current.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the power supply. In a P-channel MOSFET, it typically connects to a higher voltage than the drain when the device is active.
The FQD3P50TM is commonly used in applications such as power management, switching circuits, and signal routing. It features low on-resistance and is suitable for high-speed switching.
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate allows the device to turn on and conduct current.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the power supply. In a P-channel MOSFET, it typically connects to a higher voltage than the drain when the device is active.
The FQD3P50TM is commonly used in applications such as power management, switching circuits, and signal routing. It features low on-resistance and is suitable for high-speed switching.
Manufacturer
The FQD3P50TM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was founded in 1957 and is known for its role in the development of semiconductor technology. The company specializes in designing, manufacturing, and supplying a wide range of semiconductor components, including power management devices, analog and mixed-signal products, and discrete components. They cater to various sectors such as automotive, industrial, consumer electronics, and telecommunications. Fairchild's innovations have contributed significantly to advancements in semiconductor technology, making it a key player in the electronics industry.
Application
The FQD3P50TM is a P-Channel MOSFET commonly used in applications such as power management, switching regulators, DC-DC converters, and battery protection circuits. Its low on-resistance and high-speed switching capabilities make it suitable for load switching in consumer electronics, automotive systems, and renewable energy systems. Additionally, it can be used in audio amplifiers and other analog signal applications.
Equivalent
The FQD3P50TM is a P-channel MOSFET. Equivalent products include the IRF9520, FQP50P06, and STP55P06. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.
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