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FQD2N90TM

Name: FQD2N90TM
Rating: 4.7 (12 reviews)

MOSFET N-CH 900V 1.7A DPAK

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規格

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
Series	QFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	900 V
Current-ContinuousDrain(Id)@25°C	1.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	7.2Ohm @ 850mA, 10V
Vgs(th)(Max)@Id	5V @ 250µA
GateCharge(Qg)(Max)@Vgs	15 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	500 pF @ 25 V
PowerDissipation(Max)	2.5W (Ta), 50W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-252AA

概述

Description

FQD2N90TM is a high-voltage, N-channel MOSFET (enhancement mode) used in switching power electronics. It’s typically chosen for offline power supplies, inverters, and motor drives where a high drain-source voltage rating and fast switching are needed. The device includes a body diode and is driven by gate voltage (VGS, usually up to ±20 V). For exact values, refer to the manufacturer’s datasheet; look up VDS (drain–source breakdown), ID (continuous drain current), RDS(on), VGS(th), total gate charge, and switching characteristics (td(on), tr, td(off)) to ensure safe operation. It generally comes in a surface-mount power package (e.g., D2PAK/TO-263 family). When using it, provide proper gate drive, heat sinking, snubbers as needed, and verify the SOA and thermal limits for your application.

Features

FQD2N90TM is a high‑voltage N‑channel MOSFET. Key features typically include:
- N‑channel enhancement-mode MOSFET
- BVdss: 900 V
- Continuous drain current: ~2 A (derate with temperature/heatsinking)
- On-resistance: a few ohms (typical around 2–6 Ω at Vgs = 10 V; not guaranteed for logic‑level drive)
- Gate threshold: ~2–4 V
- Fast switching for SMPS apps; moderate gate charge
- Avalanche ruggedness for inductive loads
- Available in power packages (through‑hole and surface‑mount variants, e.g., TO‑220/D²PAK)
Note: exact values (Id, Rds(on), package) vary by variant and operating conditions. Check the datasheet for precise numbers and derating guidelines.

Package

TO-220 (TO-220AB) through-hole package.

Pinout

Pin count: 3 pins (G, D, S) with the drain also connected to the metal tab.
Function: N-channel enhancement-mode power MOSFET used as a high-voltage switching device; Gate controls current between Drain and Source (Drain typically tied to the tab; Source is the return).

Manufacturer

- Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
- What kind of company: A multinational semiconductor company that designs and manufactures discrete components (like MOSFETs, diodes, transistors) and integrated circuits for electronics.

Application

FQD2N90TM is a 900 V, 2 A N‑channel MOSFET. Typical applications:
- Offline AC–DC switch‑mode power supplies and adapters (primary switches)
- High‑voltage DC‑DC converters (flyback/boost/buck)
- Power factor correction (PFC) stages
- Inverters and motor drives for low‑ to mid‑power equipment
- Lighting ballasts and HID drivers
- General high‑voltage switching in industrial power electronics

Equivalent

Equivalent products (900V, ~2A N-channel MOSFETs) from other manufacturers:
- IRF2N90 (International Rectifier/Infineon)
- NTR2N90 (ON Semiconductor)
- STP2N90 (STMicroelectronics)
Note: verify packaging (TO-220 vs D2PAK), SOA, Rds(on), and thermal requirements; use distributor cross-reference tools for exact matches.