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FQB47P06TM-AM002
MOSFET P-CH 60V 47A D2PAK
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- 製造商。 部分 #FQB47P06TM-AM002
- 包 TO-263-3,D2PAK(2Leads+Tab),TO-263AB
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 47A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 26mOhm @ 23.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3600 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 160W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
概述
Description
FQB47P06TM-AM002 is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used in power management and switching applications. This component is characterized by its high efficiency and low on-resistance, making it suitable for various electronic devices, including power supplies and motor drives.
Key features often include a specified voltage and current rating, fast switching speeds, and thermal performance that allows it to operate effectively in demanding environments. The "AM002" designation may refer to a specific version or packaging of the MOSFET, indicating variations in parameters like gate threshold voltage or packaging type.
When integrating FQB47P06TM-AM002 into a circuit, attention must be paid to its specifications, including the maximum drain-source voltage (Vds), gate-source voltage (Vgs), and the maximum continuous drain current (Id), to ensure optimal performance and reliability. Proper thermal management and heat dissipation techniques are also essential to maintain the longevity and effectiveness of the device in practical applications.
Key features often include a specified voltage and current rating, fast switching speeds, and thermal performance that allows it to operate effectively in demanding environments. The "AM002" designation may refer to a specific version or packaging of the MOSFET, indicating variations in parameters like gate threshold voltage or packaging type.
When integrating FQB47P06TM-AM002 into a circuit, attention must be paid to its specifications, including the maximum drain-source voltage (Vds), gate-source voltage (Vgs), and the maximum continuous drain current (Id), to ensure optimal performance and reliability. Proper thermal management and heat dissipation techniques are also essential to maintain the longevity and effectiveness of the device in practical applications.
Features
The FQB47P06TM-AM002 is an N-channel power MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of handling continuous drain currents up to 47A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance, typically around 0.018 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold allows for easier driving with logic-level signals.
5. Package Type: Available in TO-220 or similar packages, facilitating efficient heat dissipation.
6. Fast Switching: High-speed switching capabilities enhance performance in applications like power supplies and motor drives.
7. Thermal Characteristics: Designed for robust thermal performance, supporting higher ambient temperatures.
Overall, the FQB47P06TM-AM002 is ideal for applications requiring efficient power management, such as DC-DC converters, inverters, and motor control systems.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of handling continuous drain currents up to 47A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance, typically around 0.018 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold allows for easier driving with logic-level signals.
5. Package Type: Available in TO-220 or similar packages, facilitating efficient heat dissipation.
6. Fast Switching: High-speed switching capabilities enhance performance in applications like power supplies and motor drives.
7. Thermal Characteristics: Designed for robust thermal performance, supporting higher ambient temperatures.
Overall, the FQB47P06TM-AM002 is ideal for applications requiring efficient power management, such as DC-DC converters, inverters, and motor control systems.
Package
The FQB47P06TM-AM002 is typically packaged in a TO-220 form factor, which is a metal tab type package used for power devices. This packaging allows for efficient heat dissipation and is commonly used in power MOSFETs.
Pinout
The FQB47P06TM-AM002 is a N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the on state. It connects to the load in a typical circuit.
3. Source (S) - This pin is the output of the MOSFET. It is connected to the ground or the negative side of the power supply in most applications.
The FQB47P06TM-AM002 is designed for high-speed switching applications, with a maximum continuous drain current rating of 47 A and a drain-source voltage rating of 60 V. Its low on-resistance and high efficiency make it suitable for various power management and motor control applications.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the on state. It connects to the load in a typical circuit.
3. Source (S) - This pin is the output of the MOSFET. It is connected to the ground or the negative side of the power supply in most applications.
The FQB47P06TM-AM002 is designed for high-speed switching applications, with a maximum continuous drain current rating of 47 A and a drain-source voltage rating of 60 V. Its low on-resistance and high efficiency make it suitable for various power management and motor control applications.
Manufacturer
The FQB47P06TM-AM002 is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital devices, as well as sensors and automotive solutions. The company serves various sectors, including automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and is known for its commitment to sustainability and innovation in the semiconductor industry.
Application
The FQB47P06TM-AM002 is a N-channel MOSFET typically used in various applications including power management, motor control, and switching circuits. It is suitable for use in computer power supplies, DC-DC converters, and automotive electronics. Its low on-resistance and fast switching capabilities make it ideal for efficient energy conversion and thermal management in consumer electronics and industrial equipment.
Equivalent
The FQB47P06TM-AM002 is an N-channel MOSFET, and equivalent products include:
1. IRF3205
2. STP47P06
3. FQP47P06
4. IPP047N06N3
Always check the datasheets for exact specifications and parameters to ensure compatibility.
1. IRF3205
2. STP47P06
3. FQP47P06
4. IPP047N06N3
Always check the datasheets for exact specifications and parameters to ensure compatibility.
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