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FQA28N50
MOSFET N-CH 500V 28.4A TO3P
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規格
| Supplier | onsemi |
| Package | Tube |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 28.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 160mOhm @ 14.2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 5600 pF @ 25 V |
| PowerDissipation(Max) | 310W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3P |
概述
Description
The FQA28N50 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A, making it suitable for high-efficiency switching applications, such as in power supplies and motor drives. The MOSFET has a low on-resistance (R_DS(on)) which enhances its efficiency by reducing power losses during operation.
With a gate threshold voltage (V_GS(th)) typically between 2-4V, it allows for easy interfacing with low-voltage control signals. The FQA28N50 is encapsulated in a TO-220 package for efficient heat dissipation. Its robust performance under high-temperature conditions, along with fast switching capabilities, makes it ideal for various applications including DC-DC converters, inverters, and lighting control systems.
Overall, the FQA28N50 is a reliable component for engineers looking to design efficient and high-performance electronic circuits.
With a gate threshold voltage (V_GS(th)) typically between 2-4V, it allows for easy interfacing with low-voltage control signals. The FQA28N50 is encapsulated in a TO-220 package for efficient heat dissipation. Its robust performance under high-temperature conditions, along with fast switching capabilities, makes it ideal for various applications including DC-DC converters, inverters, and lighting control systems.
Overall, the FQA28N50 is a reliable component for engineers looking to design efficient and high-performance electronic circuits.
Features
The FQA28N50 is a power MOSFET transistor designed for high-efficiency applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The device has a continuous drain current (I_D) rating of 28A, which allows it to conduct significant current in power applications.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 0.07 ohms at 10V gate voltage, which minimizes conduction losses.
4. Fast Switching: The FQA28N50 supports fast switching speeds, making it ideal for applications like switch-mode power supplies.
5. Thermal Performance: It features a robust package that aids in effective heat dissipation, allowing for reliable performance under load.
6. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) ranges from 2 to 4V, ensuring compatibility with various drive circuits.
Overall, the FQA28N50 is suitable for applications in power supplies, motor control, and electronic switching systems.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Current Rating: The device has a continuous drain current (I_D) rating of 28A, which allows it to conduct significant current in power applications.
3. Low R_DS(on): It boasts a low on-resistance (R_DS(on)), typically around 0.07 ohms at 10V gate voltage, which minimizes conduction losses.
4. Fast Switching: The FQA28N50 supports fast switching speeds, making it ideal for applications like switch-mode power supplies.
5. Thermal Performance: It features a robust package that aids in effective heat dissipation, allowing for reliable performance under load.
6. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) ranges from 2 to 4V, ensuring compatibility with various drive circuits.
Overall, the FQA28N50 is suitable for applications in power supplies, motor control, and electronic switching systems.
Package
The FQA28N50 is typically packaged in a TO-220 format, which is a robust, insulated package suitable for power applications, allowing for effective heat dissipation. This package type is commonly used for power MOSFETs in various electronic devices.
Pinout
The FQA28N50 is a power MOSFET with a pin count of 3. It features three terminals:
1. Gate (G): This terminal controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit, completing the current path.
The FQA28N50 is designed for high voltage and high current applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A. It is commonly used in power supplies, motor control, and other applications requiring efficient switching.
1. Gate (G): This terminal controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit, completing the current path.
The FQA28N50 is designed for high voltage and high current applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 28A. It is commonly used in power supplies, motor control, and other applications requiring efficient switching.
Manufacturer
The FQA28N50 is manufactured by Fairchild Semiconductor, which is a semiconductor company known for developing and producing a wide range of electronic components. Fairchild specializes in power management, analog, and mixed-signal solutions, as well as discrete semiconductors like MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which includes the FQA28N50. The company was founded in 1957 and has played a significant role in the semiconductor industry, especially in the development of innovative technologies and products for various applications, including automotive, consumer electronics, and industrial systems. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, further expanding its portfolio and capabilities in the semiconductor market.
Application
The FQA28N50 is a power MOSFET commonly used in applications such as switching power supplies, DC-DC converters, motor control, and automotive electronics. Its high voltage rating and efficiency make it suitable for energy conversion and amplification in various electronic circuits. Additionally, it can be used in high-frequency applications and as a switch in low to medium power applications, enhancing performance in power management systems.
Equivalent
The FQA28N50 is a N-channel MOSFET with a 500V rating and 28A current capacity. Equivalent products include the IRF540, STP40NF50, and MTP50N50. Be sure to check datasheets for specific parameters like R_DS(on), gate threshold voltage, and package type to ensure compatibility.
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