圖片僅供參考

FQA11N90C-F109

Name: FQA11N90C-F109
Rating: 4.7 (12 reviews)

POWER FIELD-EFFECT TRANSISTOR, 1

製造商
製造商。部分 #FQA11N90C-F109
包
資料表 FQA11N90C-F109 DataSheet
有現貨的6378

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Package	Bulk
ProductStatus	Active

概述

Description

The FQA11N90C-F109 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It is characterized by its ability to handle high current and voltage levels, making it suitable for power management and switching applications.
Key specifications include a maximum drain-source voltage (V_DS) of 900V, a continuous drain current (I_D) of 11A, and a low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation. Its fast switching speeds make it ideal for use in power supplies, converters, and motor control systems.
The device is housed in a TO-220 package, allowing for effective thermal dissipation. When integrating the FQA11N90C-F109 into circuits, attention to thermal management and proper gate drive circuitry is essential to achieve optimal performance and reliability.

Features

The FQA11N90C-F109 is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 11A, allowing it to handle significant loads.
3. Low On-Resistance: It features a low on-resistance (R_DS(on)) of approximately 0.11 ohms, which minimizes power loss during operation.
4. Fast Switching Speed: The device supports fast switching, enhancing performance in PWM and other high-frequency applications.
5. Thermal Characteristics: It offers good thermal stability, with a maximum junction temperature of 150°C.
6. TO-220 Package: The device comes in a TO-220 package, facilitating easy heat dissipation and efficient mounting.
These features make the FQA11N90C-F109 ideal for power supplies, motor drives, and other high-voltage applications requiring efficient switching.

Package

The FQA11N90C-F109 is packaged in a TO-220 format, which is a common type of package used for high-power transistors. This package type provides effective heat dissipation and facilitates easy mounting on heatsinks.

Pinout

The FQA11N90C-F109 is a N-channel MOSFET with a TO-220 package. It features a total of three pins.
1. Gate (G): The control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which the current flows into the MOSFET when it is conducting.
The FQA11N90C is designed for high-voltage applications, with a maximum drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 11A. This makes it suitable for use in power supplies, inverters, and motor control systems.

Manufacturer

The FQA11N90C-F109 is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products, including power transistors, diodes, and integrated circuits. Fairchild Semiconductor specializes in power management and signal processing solutions, catering to various industries such as automotive, consumer electronics, and industrial applications. The company is recognized for its innovation in semiconductor technology and has a strong presence in the electronic components market. In 2016, Fairchild was acquired by ON Semiconductor, which further expanded its portfolio and capabilities in the semiconductor landscape.

Application

The FQA11N90C-F109 is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch mode power supplies (SMPS), motor control, and inverter circuits. It is suitable for high-efficiency power conversion, automotive applications, and industrial equipment due to its low on-resistance and high-speed switching capabilities.

Equivalent

The FQA11N90C-F109 is an N-channel MOSFET. Equivalent products include the IRF820, STP11NK90Z, and MTP11N90E. Always verify specifications like voltage, current rating, and package type before substitution.