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FM24VN10-GTR

Name: FM24VN10-GTR
Rating: 4.7 (12 reviews)

IC FRAM 1MBIT I2C 3.4MHZ 8SOIC

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製造商。部分 #FM24VN10-GTR
包 PG-DSO-8
資料表 FM24VN10-GTR DataSheet
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規格

Package	Tape & Reel (TR)
Series	F-RAM™
ProductStatus	Active
MemoryType	Non-Volatile
MemoryFormat	FRAM
Technology	FRAM (Ferroelectric RAM)
MemorySize	1Mb (128K x 8)
MemoryInterface	I²C
ClockFrequency	3.4 MHz
AccessTime	130 ns
Voltage-Supply	2V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	8-SOIC (0.154, 3.90mm Width)

概述

Description

FM24VN10-GTR is a 1-Mbit I2C serial EEPROM (non-volatile memory) from Fudan Microelectronics, offered in an 8-pin GTR package. It provides byte-addressable random read/write with page-write capability over a two-wire I2C interface. The device is suitable for storing firmware parameters, configuration data, small logs, or other data that must survive power loss.
Key features (typical): non-volatile storage, I2C interface (standard/fast modes), low-power operation, and write endurance in the 1e5–1e6 range with data retention of many years. The GTR suffix identifies the specific RoHS-compliant package variant.
Usage notes: connect SDA and SCL to your MCU I2C lines, configure WP as needed, supply Vcc within the device’s voltage range, and follow the memory map, addressing, and page-size limits from the datasheet.
For exact electrical specs, timing, page size, and endurance figures, refer to the FM24VN10-GTR datasheet.

Features

Short features of FM24VN10-GTR:
- 1 Mbit I2C (serial) EEPROM: 128 Kbit × 8 organization
- Interface: I2C two-wire, standard/fast modes; address pins A0–A2 for up to 8 devices
- Memory access: random byte/word read and 64-byte page write
- Write protection: WP pin and software write-protect options
- Power: 2.7–3.6 V operation
- Endurance/Data retention: ~1,000,000 write cycles; data retention around 100 years
- Low power: low active current and µA-level standby modes
- Temp options: industrial (-40 to 85°C) and automotive-grade (-40 to 125°C) variants
- Package: 8-pin (e.g., SOIC8/USON8), RoHS-compliant (GTR variant packaging)

Package

FM24VN10-GTR comes in an 8-pin package, typically an SOIC (SOP-8) style.

Pinout

- Pin count: 8 pins (8-pin package)
- Function: 1 Mbit serial FRAM (ferroelectric RAM) with I2C interface. Non-volatile RAM with fast write; pins include VCC, GND, SDA, SCL, WP (write protect), and address pins A0–A2.

Manufacturer

Manufacturer: Fudan Microelectronics Corporation (FM).
What kind of company: a Chinese fabless semiconductor company that designs and markets non-volatile memory products (NVSRAM/FRAM and related ICs).

Application

FM24VN10-GTR is a 1-Mb ferroelectric RAM (FeRAM) with I2C interface. Applications:
- Automotive ECUs/body electronics: non-volatile calibration/config data, fault logs
- Industrial controllers/data loggers: high endurance, fast writes
- IoT/wearables: low-power non-volatile storage for logs and config
- Medical devices: non-volatile data storage
- Smart meters and consumer electronics: MCU backup memory

Equivalent

FM24VN10-GTR is a 1‑Mbit FRAM (ferroelectric RAM) with an I2C serial interface. Common cross‑references include Cypress FM25V10 (1 Mbit I2C FRAM) and Fujitsu/Renesas MB85RS1MT (1 Mbit FRAM, SPI). For an exact substitute, check voltage, package, and interface compatibility in a cross‑reference tool; provide your required interface, voltage range, and package.